STB40NF10T4
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STMicroelectronics STB40NF10T4

Manufacturer No:
STB40NF10T4
Manufacturer:
STMicroelectronics
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 100V 50A D2PAK
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The STB40NF10T4 is a high-performance N-channel Power MOSFET from STMicroelectronics, designed using the unique STripFET process. This MOSFET is optimized to minimize input capacitance and gate charge, making it highly suitable for advanced high-efficiency isolated DC-DC converters in telecom and computer applications. It is also ideal for any application requiring low gate charge drive.

Key Specifications

ParameterValueUnit
Drain-Source Voltage (VDS)100V
Drain-Source On Resistance (RDS(on))<0.033Ω
Continuous Drain Current (ID) at TC = 25°C40A
Continuous Drain Current (ID) at TC = 100°C25A
Pulse Drain Current (IDM)160A
Total Dissipation at TC = 25°C150W
Operating Temperature Range-55 to 175°C
Gate-Source Voltage (VGS)±15V
Package TypeD2PAK
RoHS ComplianceEcopack2

Key Features

  • Exceptional dv/dt capability
  • 100% avalanche tested
  • Low gate charge due to STripFET process
  • High efficiency in isolated DC-DC converters
  • Suitable for telecom and computer applications
  • Low input capacitance and gate charge
  • ECOPACK® packages for environmental compliance

Applications

  • Advanced high-efficiency isolated DC-DC converters
  • Telecom applications
  • Computer applications
  • Switching applications requiring low gate charge drive

Q & A

  1. What is the maximum drain-source voltage of the STB40NF10T4?
    The maximum drain-source voltage is 100V.
  2. What is the typical on-resistance of the STB40NF10T4?
    The typical on-resistance is less than 0.033Ω.
  3. What is the continuous drain current at 25°C?
    The continuous drain current at 25°C is 40A.
  4. What is the operating temperature range of the STB40NF10T4?
    The operating temperature range is -55°C to 175°C.
  5. Is the STB40NF10T4 RoHS compliant?
    Yes, it is RoHS compliant with Ecopack2 packaging.
  6. What type of package does the STB40NF10T4 come in?
    The STB40NF10T4 comes in a D2PAK package.
  7. What are the key applications of the STB40NF10T4?
    The key applications include advanced high-efficiency isolated DC-DC converters, telecom, and computer applications.
  8. What is the maximum pulse drain current of the STB40NF10T4?
    The maximum pulse drain current is 160A.
  9. What is the total dissipation at 25°C for the STB40NF10T4?
    The total dissipation at 25°C is 150W.
  10. Does the STB40NF10T4 have any special features for high-efficiency applications?
    Yes, it has exceptional dv/dt capability and is 100% avalanche tested, making it suitable for high-efficiency applications.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:50A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:28mOhm @ 25A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:80 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:1780 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):150W (Tc)
Operating Temperature:-50°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:D2PAK
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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Similar Products

Part Number STB40NF10T4 STB80NF10T4 STB60NF10T4 STB30NF10T4 STB40NF10LT4
Manufacturer STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics
Product Status Obsolete Active Obsolete Active Active
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V 100 V 100 V 100 V 100 V
Current - Continuous Drain (Id) @ 25°C 50A (Tc) 80A (Tc) 80A (Tc) 35A (Tc) 40A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V 5V, 10V
Rds On (Max) @ Id, Vgs 28mOhm @ 25A, 10V 15mOhm @ 40A, 10V 23mOhm @ 40A, 10V 45mOhm @ 15A, 10V 33mOhm @ 20A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA 4V @ 250µA 4V @ 250µA 4V @ 250µA 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 80 nC @ 10 V 182 nC @ 10 V 104 nC @ 10 V 55 nC @ 10 V 64 nC @ 4.5 V
Vgs (Max) ±20V ±20V ±20V ±20V ±15V
Input Capacitance (Ciss) (Max) @ Vds 1780 pF @ 25 V 5500 pF @ 25 V 4270 pF @ 25 V 1180 pF @ 25 V 2300 pF @ 25 V
FET Feature - - - - -
Power Dissipation (Max) 150W (Tc) 300W (Tc) 300W (Tc) 115W (Tc) 150W (Tc)
Operating Temperature -50°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -65°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package D2PAK D2PAK D2PAK D2PAK D2PAK
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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