STB40NF10LT4
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STMicroelectronics STB40NF10LT4

Manufacturer No:
STB40NF10LT4
Manufacturer:
STMicroelectronics
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 100V 40A D2PAK
Delivery:
Payment:
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Product Introduction

Overview

The STB40NF10LT4 is a high-performance N-channel power MOSFET produced by STMicroelectronics. This device is part of the STripFET series, which is designed to minimize input capacitance and gate charge, making it highly suitable for applications requiring low gate charge drive requirements.

It is particularly recommended for use as the primary switch in advanced high-efficiency isolated DC-DC converters, especially in telecom and computer applications. The STB40NF10LT4 features an enhanced trench gate structure, which contributes to its exceptional performance and reliability.

Key Specifications

Parameter Value Unit
Drain-Source Voltage (Vds) 100 V
Drain Current (Id) 40 A
On-Resistance (Rds(on)) 0.028 Ω
Gate Charge (Qg) Low gate charge nC
Package D2PAK -
Operating Temperature -55 to 150 °C
RoHS Compliance Ecopack2 -

Key Features

  • Exceptional dv/dt capability
  • Application-oriented characterization
  • 100% avalanche tested
  • Enhanced trench gate structure using ST's STripFET F8 technology
  • Low gate charge
  • Zener-protected

Applications

The STB40NF10LT4 is ideal for various high-efficiency applications, including:

  • Advanced isolated DC-DC converters for telecom and computer systems
  • Flyback converters
  • LED lighting applications
  • Any application requiring low gate charge drive requirements

Q & A

  1. What is the drain-source voltage (Vds) of the STB40NF10LT4?

    The drain-source voltage (Vds) of the STB40NF10LT4 is 100 V.

  2. What is the maximum drain current (Id) of the STB40NF10LT4?

    The maximum drain current (Id) of the STB40NF10LT4 is 40 A.

  3. What is the on-resistance (Rds(on)) of the STB40NF10LT4?

    The on-resistance (Rds(on)) of the STB40NF10LT4 is 0.028 Ω.

  4. What package type is the STB40NF10LT4 available in?

    The STB40NF10LT4 is available in the D2PAK package.

  5. What are the operating temperature ranges for the STB40NF10LT4?

    The operating temperature range for the STB40NF10LT4 is from -55°C to 150°C.

  6. Is the STB40NF10LT4 RoHS compliant?

    Yes, the STB40NF10LT4 is RoHS compliant with an Ecopack2 grade.

  7. What are some typical applications for the STB40NF10LT4?

    The STB40NF10LT4 is typically used in advanced isolated DC-DC converters, flyback converters, LED lighting, and other applications requiring low gate charge drive requirements.

  8. What technology is used in the STB40NF10LT4?

    The STB40NF10LT4 uses ST's STripFET F8 technology with an enhanced trench gate structure.

  9. Is the STB40NF10LT4 100% avalanche tested?

    Yes, the STB40NF10LT4 is 100% avalanche tested.

  10. Where can I find EDA symbols, footprints, and 3D models for the STB40NF10LT4?

    You can find EDA symbols, footprints, and 3D models for the STB40NF10LT4 on the STMicroelectronics website.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:40A (Tc)
Drive Voltage (Max Rds On, Min Rds On):5V, 10V
Rds On (Max) @ Id, Vgs:33mOhm @ 20A, 10V
Vgs(th) (Max) @ Id:2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:64 nC @ 4.5 V
Vgs (Max):±15V
Input Capacitance (Ciss) (Max) @ Vds:2300 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):150W (Tc)
Operating Temperature:-65°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:D2PAK
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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Similar Products

Part Number STB40NF10LT4 STB40NF10T4
Manufacturer STMicroelectronics STMicroelectronics
Product Status Active Obsolete
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V 100 V
Current - Continuous Drain (Id) @ 25°C 40A (Tc) 50A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 5V, 10V 10V
Rds On (Max) @ Id, Vgs 33mOhm @ 20A, 10V 28mOhm @ 25A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 64 nC @ 4.5 V 80 nC @ 10 V
Vgs (Max) ±15V ±20V
Input Capacitance (Ciss) (Max) @ Vds 2300 pF @ 25 V 1780 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 150W (Tc) 150W (Tc)
Operating Temperature -65°C ~ 175°C (TJ) -50°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package D2PAK D2PAK
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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