Overview
The STB80NF10T4 is a high-performance N-channel power MOSFET developed by STMicroelectronics using their unique STripFET process. This process is designed to minimize input capacitance and gate charge, making the MOSFET ideal for primary switching in advanced high-efficiency isolated DC-DC converters, particularly in telecom and computer applications. The device is also suitable for any application requiring low gate charge drive capabilities.
Key Specifications
| Parameter | Value | Unit |
|---|---|---|
| Drain-Source Voltage (VDS) | 100 | V |
| Gate-Source Voltage (VGS) | ±20 | V |
| Continuous Drain Current (ID) at TC = 25°C | 80 | A |
| Pulsed Drain Current (IDM) | 320 | A |
| Total Dissipation at TC = 25°C | 300 | W |
| Static Drain-Source On Resistance (RDS(on)) at VGS = 10V | 0.012 | Ω |
| Gate Threshold Voltage (VGS(th)) | 2-4 | V |
| Thermal Resistance Junction-Case (Rthj-case) | 0.5 | °C/W |
| Thermal Resistance Junction-Ambient (Rthj-amb) | 62.5 | °C/W |
| Storage Temperature (Tstg) | -55 to 175 | °C |
| Package | D2PAK |
Key Features
- Exceptional dv/dt capability
- Application-oriented characterization
- 100% Avalanche tested
- Excellent thermal shock resistance
- Compact and miniaturized package (D2PAK)
- Superior radiation hardness
- Low on-resistance (9.5 mΩ at VGS = 10V)
- Built-in body diode for improved efficiency and protection against reverse currents
Applications
- Advanced high-efficiency isolated DC-DC converters for telecom and computer applications
- Power supplies
- Motor control
- Lighting control
- Audio amplifiers
- Electric vehicles
- Switching applications with low gate charge drive requirements
Q & A
- What is the maximum drain-source voltage of the STB80NF10T4?
The maximum drain-source voltage (VDS) is 100 V.
- What is the continuous drain current rating of the STB80NF10T4 at 25°C?
The continuous drain current (ID) at 25°C is 80 A.
- What is the typical on-resistance of the STB80NF10T4 at VGS = 10V?
The typical static drain-source on resistance (RDS(on)) at VGS = 10V is 0.012 Ω.
- What package types are available for the STB80NF10T4?
The STB80NF10T4 is available in D2PAK and TO-220 packages.
- What are some of the key features of the STB80NF10T4?
Key features include exceptional dv/dt capability, application-oriented characterization, 100% Avalanche tested, and low on-resistance.
- What are the typical applications of the STB80NF10T4?
Typical applications include power supplies, motor control, lighting control, audio amplifiers, and electric vehicles.
- Is the STB80NF10T4 RoHS compliant?
- What is the thermal resistance junction-case of the STB80NF10T4?
The thermal resistance junction-case (Rthj-case) is 0.5 °C/W.
- What is the storage temperature range for the STB80NF10T4?
The storage temperature range is -55 to 175 °C.
- Does the STB80NF10T4 have a built-in body diode?
