STB10NK60ZT4
  • Share:

STMicroelectronics STB10NK60ZT4

Manufacturer No:
STB10NK60ZT4
Manufacturer:
STMicroelectronics
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 600V 10A D2PAK
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The STB10NK60ZT4 is a high-performance N-channel Power MOSFET developed by STMicroelectronics. This device is part of the SuperMESH™ family, known for its optimized strip-based PowerMESH™ layout, which significantly reduces on-resistance and enhances dv/dt capability. The STB10NK60ZT4 is packaged in a D2PAK (TO-263) case, making it suitable for a variety of high-power switching applications.

Key Specifications

ParameterValueUnit
Drain-source voltage (VDS)600V
Drain current (ID) continuous at TC = 25 °C10A
Drain current (ID) continuous at TC = 100 °C5.7A
Pulsed drain current (IDM)36A
Power dissipation (PTOT) at TC = 25 °C115W
Gate-source voltage (VGS)±30V
On-state resistance (RDS(on))< 0.75Ω
PackageD2PAK (TO-263)
MountingSMD
Channel typeEnhanced N-channel
ESD protectionESD protected gate

Key Features

  • Extremely high dv/dt capability, making it suitable for demanding applications.
  • 100% avalanche tested for reliability.
  • Gate charge minimized to reduce switching losses.
  • Zener-protected gate to enhance ESD capability and protect against voltage transients.
  • SuperMESH™ technology for reduced on-resistance and improved performance.

Applications

The STB10NK60ZT4 is designed for high-power switching applications, including but not limited to:

  • Power supplies and DC-DC converters.
  • Motor control and drive systems.
  • Industrial automation and control systems.
  • Renewable energy systems, such as solar and wind power inverters.

Q & A

  1. What is the maximum drain-source voltage of the STB10NK60ZT4?
    The maximum drain-source voltage is 600 V.
  2. What is the continuous drain current at 25 °C?
    The continuous drain current at 25 °C is 10 A.
  3. What is the pulsed drain current capability?
    The pulsed drain current capability is 36 A.
  4. What is the on-state resistance of the STB10NK60ZT4?
    The on-state resistance is less than 0.75 Ω.
  5. What type of package does the STB10NK60ZT4 come in?
    The STB10NK60ZT4 comes in a D2PAK (TO-263) package.
  6. Does the STB10NK60ZT4 have ESD protection?
    Yes, the STB10NK60ZT4 has ESD protected gate.
  7. What technology is used in the STB10NK60ZT4?
    The STB10NK60ZT4 uses STMicroelectronics' SuperMESH™ technology.
  8. What are some typical applications of the STB10NK60ZT4?
    Typical applications include power supplies, motor control, industrial automation, and renewable energy systems.
  9. Is the STB10NK60ZT4 100% avalanche tested?
    Yes, the STB10NK60ZT4 is 100% avalanche tested.
  10. What is the maximum gate-source voltage?
    The maximum gate-source voltage is ±30 V.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):600 V
Current - Continuous Drain (Id) @ 25°C:10A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:750mOhm @ 4.5A, 10V
Vgs(th) (Max) @ Id:4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:70 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:1370 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):115W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:D2PAK
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
0 Remaining View Similar

In Stock

$3.76
190

Please send RFQ , we will respond immediately.

Same Series
STP10NK60Z
STP10NK60Z
MOSFET N-CH 600V 10A TO220AB
STW10NK60Z
STW10NK60Z
MOSFET N-CH 600V 10A TO247-3
STB10NK60ZT4
STB10NK60ZT4
MOSFET N-CH 600V 10A D2PAK
STB10NK60Z-1
STB10NK60Z-1
MOSFET N-CH 600V 10A I2PAK

Similar Products

Part Number STB10NK60ZT4 STB13NK60ZT4 STB14NK60ZT4
Manufacturer STMicroelectronics STMicroelectronics STMicroelectronics
Product Status Not For New Designs Active Active
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V 600 V 600 V
Current - Continuous Drain (Id) @ 25°C 10A (Tc) 13A (Tc) 13.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V
Rds On (Max) @ Id, Vgs 750mOhm @ 4.5A, 10V 550mOhm @ 4.5A, 10V 500mOhm @ 6A, 10V
Vgs(th) (Max) @ Id 4.5V @ 250µA 4.5V @ 100µA 4.5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs 70 nC @ 10 V 92 nC @ 10 V 75 nC @ 10 V
Vgs (Max) ±30V ±30V ±30V
Input Capacitance (Ciss) (Max) @ Vds 1370 pF @ 25 V 2030 pF @ 25 V 2220 pF @ 25 V
FET Feature - - -
Power Dissipation (Max) 115W (Tc) 150W (Tc) 160W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Supplier Device Package D2PAK D2PAK D2PAK
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Related Product By Categories

BSC040N10NS5ATMA1
BSC040N10NS5ATMA1
Infineon Technologies
MOSFET N-CH 100V 100A TDSON
BSS84AKM,315
BSS84AKM,315
Nexperia USA Inc.
MOSFET P-CH 50V 230MA DFN1006-3
STP13NK60Z
STP13NK60Z
STMicroelectronics
MOSFET N-CH 600V 13A TO220AB
BSS84PH6327XTSA2
BSS84PH6327XTSA2
Infineon Technologies
MOSFET P-CH 60V 170MA SOT23-3
CSD18511Q5A
CSD18511Q5A
Texas Instruments
MOSFET N-CH 40V 159A 8VSON
STW45N60DM2AG
STW45N60DM2AG
STMicroelectronics
MOSFET N-CH 600V 34A TO247
PMV50XP215
PMV50XP215
NXP USA Inc.
P-CHANNEL MOSFET
NX7002AKVL
NX7002AKVL
Nexperia USA Inc.
MOSFET N-CH 60V 190MA TO236AB
BBS3002-TL-1E
BBS3002-TL-1E
onsemi
MOSFET P-CH 60V 100A D2PAK
2N7002BKM,315
2N7002BKM,315
Nexperia USA Inc.
MOSFET N-CH 60V 450MA DFN1006-3
STS12NH3LL
STS12NH3LL
STMicroelectronics
MOSFET N-CH 30V 12A 8SO
NTB52N10T4G
NTB52N10T4G
onsemi
MOSFET N-CH 100V 52A D2PAK

Related Product By Brand

STPS0560Z
STPS0560Z
STMicroelectronics
DIODE SCHOTTKY 60V 500MA SOD123
SCT30N120H
SCT30N120H
STMicroelectronics
SICFET N-CH 1200V 40A H2PAK-2
STD6N80K5
STD6N80K5
STMicroelectronics
MOSFET N-CH 800V 4.5A DPAK
STL160N4F7
STL160N4F7
STMicroelectronics
MOSFET N-CH 40V 120A POWERFLAT
STM32F427VGT6TR
STM32F427VGT6TR
STMicroelectronics
IC MCU 32BIT 1MB FLASH 100LQFP
STM32F407ZET7
STM32F407ZET7
STMicroelectronics
IC MCU 32BIT 512KB FLASH 144LQFP
STM32H755ZIT6U
STM32H755ZIT6U
STMicroelectronics
IC MCU 32BIT 2MB FLASH 144LQFP
ST232BD
ST232BD
STMicroelectronics
IC TRANSCEIVER FULL 2/2 16SO
TDA2822M
TDA2822M
STMicroelectronics
IC AMP AB MONO/STER 2W 8MINI DIP
TS881ILT
TS881ILT
STMicroelectronics
IC COMPARATOR R-R 1.1V SOT-23-5
LDL1117S33R
LDL1117S33R
STMicroelectronics
IC REG LINEAR 3.3V 1.2A SOT223
LSM6DS3HTR
LSM6DS3HTR
STMicroelectronics
IMU ACCEL/GYRO/TEMP I2C/SPI LGA