STB10NK60ZT4
  • Share:

STMicroelectronics STB10NK60ZT4

Manufacturer No:
STB10NK60ZT4
Manufacturer:
STMicroelectronics
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 600V 10A D2PAK
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The STB10NK60ZT4 is a high-performance N-channel Power MOSFET developed by STMicroelectronics. This device is part of the SuperMESH™ family, known for its optimized strip-based PowerMESH™ layout, which significantly reduces on-resistance and enhances dv/dt capability. The STB10NK60ZT4 is packaged in a D2PAK (TO-263) case, making it suitable for a variety of high-power switching applications.

Key Specifications

ParameterValueUnit
Drain-source voltage (VDS)600V
Drain current (ID) continuous at TC = 25 °C10A
Drain current (ID) continuous at TC = 100 °C5.7A
Pulsed drain current (IDM)36A
Power dissipation (PTOT) at TC = 25 °C115W
Gate-source voltage (VGS)±30V
On-state resistance (RDS(on))< 0.75Ω
PackageD2PAK (TO-263)
MountingSMD
Channel typeEnhanced N-channel
ESD protectionESD protected gate

Key Features

  • Extremely high dv/dt capability, making it suitable for demanding applications.
  • 100% avalanche tested for reliability.
  • Gate charge minimized to reduce switching losses.
  • Zener-protected gate to enhance ESD capability and protect against voltage transients.
  • SuperMESH™ technology for reduced on-resistance and improved performance.

Applications

The STB10NK60ZT4 is designed for high-power switching applications, including but not limited to:

  • Power supplies and DC-DC converters.
  • Motor control and drive systems.
  • Industrial automation and control systems.
  • Renewable energy systems, such as solar and wind power inverters.

Q & A

  1. What is the maximum drain-source voltage of the STB10NK60ZT4?
    The maximum drain-source voltage is 600 V.
  2. What is the continuous drain current at 25 °C?
    The continuous drain current at 25 °C is 10 A.
  3. What is the pulsed drain current capability?
    The pulsed drain current capability is 36 A.
  4. What is the on-state resistance of the STB10NK60ZT4?
    The on-state resistance is less than 0.75 Ω.
  5. What type of package does the STB10NK60ZT4 come in?
    The STB10NK60ZT4 comes in a D2PAK (TO-263) package.
  6. Does the STB10NK60ZT4 have ESD protection?
    Yes, the STB10NK60ZT4 has ESD protected gate.
  7. What technology is used in the STB10NK60ZT4?
    The STB10NK60ZT4 uses STMicroelectronics' SuperMESH™ technology.
  8. What are some typical applications of the STB10NK60ZT4?
    Typical applications include power supplies, motor control, industrial automation, and renewable energy systems.
  9. Is the STB10NK60ZT4 100% avalanche tested?
    Yes, the STB10NK60ZT4 is 100% avalanche tested.
  10. What is the maximum gate-source voltage?
    The maximum gate-source voltage is ±30 V.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):600 V
Current - Continuous Drain (Id) @ 25°C:10A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:750mOhm @ 4.5A, 10V
Vgs(th) (Max) @ Id:4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:70 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:1370 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):115W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:D2PAK
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
0 Remaining View Similar

In Stock

$3.76
190

Please send RFQ , we will respond immediately.

Same Series
STP10NK60Z
STP10NK60Z
MOSFET N-CH 600V 10A TO220AB
STP10NK60ZFP
STP10NK60ZFP
MOSFET N-CH 600V 10A TO220FP
STB10NK60ZT4
STB10NK60ZT4
MOSFET N-CH 600V 10A D2PAK
STB10NK60Z-1
STB10NK60Z-1
MOSFET N-CH 600V 10A I2PAK

Similar Products

Part Number STB10NK60ZT4 STB13NK60ZT4 STB14NK60ZT4
Manufacturer STMicroelectronics STMicroelectronics STMicroelectronics
Product Status Not For New Designs Active Active
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V 600 V 600 V
Current - Continuous Drain (Id) @ 25°C 10A (Tc) 13A (Tc) 13.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V
Rds On (Max) @ Id, Vgs 750mOhm @ 4.5A, 10V 550mOhm @ 4.5A, 10V 500mOhm @ 6A, 10V
Vgs(th) (Max) @ Id 4.5V @ 250µA 4.5V @ 100µA 4.5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs 70 nC @ 10 V 92 nC @ 10 V 75 nC @ 10 V
Vgs (Max) ±30V ±30V ±30V
Input Capacitance (Ciss) (Max) @ Vds 1370 pF @ 25 V 2030 pF @ 25 V 2220 pF @ 25 V
FET Feature - - -
Power Dissipation (Max) 115W (Tc) 150W (Tc) 160W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Supplier Device Package D2PAK D2PAK D2PAK
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Related Product By Categories

AO3400-5.8A
AO3400-5.8A
MDD
MOSFET SOT-23 N Channel 30V
IRFB3607PBF
IRFB3607PBF
Infineon Technologies
MOSFET N-CH 75V 80A TO220AB
PSMN1R0-40YLDX
PSMN1R0-40YLDX
Nexperia USA Inc.
MOSFET N-CH 40V 280A LFPAK56
NTMFS5C460NLT1G
NTMFS5C460NLT1G
onsemi
MOSFET N-CH 40V 5DFN
STD105N10F7AG
STD105N10F7AG
STMicroelectronics
MOSFET N-CH 100V 80A DPAK
STW48NM60N
STW48NM60N
STMicroelectronics
MOSFET N-CH 600V 44A TO247
FQD2N60CTM
FQD2N60CTM
Fairchild Semiconductor
POWER FIELD-EFFECT TRANSISTOR, 1
STP80PF55
STP80PF55
STMicroelectronics
MOSFET P-CH 55V 80A TO220AB
NTD20N06LT4
NTD20N06LT4
onsemi
MOSFET N-CH 60V 20A DPAK
2SJ652-1E
2SJ652-1E
onsemi
MOSFET P-CH 60V 28A TO220F-3SG
PMV65XP/MIR
PMV65XP/MIR
Nexperia USA Inc.
MOSFET P-CH 20V 2.8A TO236AB
BSS138W-7-F-79
BSS138W-7-F-79
Diodes Incorporated
DIODE

Related Product By Brand

STPSC10H12CWL
STPSC10H12CWL
STMicroelectronics
DIODE ARRAY SCHOTTKY 1200V TO247
STTH1002CG
STTH1002CG
STMicroelectronics
DIODE ARRAY GP 200V 8A D2PAK
BD678A
BD678A
STMicroelectronics
TRANS PNP DARL 60V 4A SOT32-3
STM32L412CBU6
STM32L412CBU6
STMicroelectronics
IC MCU 32BIT 128KB FLSH 48UFQFPN
STM8AF6223IPCX
STM8AF6223IPCX
STMicroelectronics
IC MCU 8BIT 4KB FLASH 20TSSOP
TDA7498LTR
TDA7498LTR
STMicroelectronics
IC AMP D STEREO 80W POWERSSO36
TL084IDT
TL084IDT
STMicroelectronics
IC OPAMP JFET 4 CIRCUIT 14SO
LM239DT
LM239DT
STMicroelectronics
IC COMP QUAD LOW PWR 14SOIC
M24256-BWMN6T
M24256-BWMN6T
STMicroelectronics
IC EEPROM 256KBIT I2C 1MHZ 8SO
VNQ6004SA-E
VNQ6004SA-E
STMicroelectronics
IC PWR DRVR N-CHAN 1:1 PWRSSO36
L78M15CDT-TR
L78M15CDT-TR
STMicroelectronics
IC REG LINEAR 15V 500MA DPAK
PSD813F2A-90M
PSD813F2A-90M
STMicroelectronics
IC FLASH 1M PARALLEL 52PQFP