Overview
The STB10NK60ZT4 is a high-performance N-channel Power MOSFET developed by STMicroelectronics. This device is part of the SuperMESH™ family, known for its optimized strip-based PowerMESH™ layout, which significantly reduces on-resistance and enhances dv/dt capability. The STB10NK60ZT4 is packaged in a D2PAK (TO-263) case, making it suitable for a variety of high-power switching applications.
Key Specifications
Parameter | Value | Unit |
---|---|---|
Drain-source voltage (VDS) | 600 | V |
Drain current (ID) continuous at TC = 25 °C | 10 | A |
Drain current (ID) continuous at TC = 100 °C | 5.7 | A |
Pulsed drain current (IDM) | 36 | A |
Power dissipation (PTOT) at TC = 25 °C | 115 | W |
Gate-source voltage (VGS) | ±30 | V |
On-state resistance (RDS(on)) | < 0.75 | Ω |
Package | D2PAK (TO-263) | |
Mounting | SMD | |
Channel type | Enhanced N-channel | |
ESD protection | ESD protected gate |
Key Features
- Extremely high dv/dt capability, making it suitable for demanding applications.
- 100% avalanche tested for reliability.
- Gate charge minimized to reduce switching losses.
- Zener-protected gate to enhance ESD capability and protect against voltage transients.
- SuperMESH™ technology for reduced on-resistance and improved performance.
Applications
The STB10NK60ZT4 is designed for high-power switching applications, including but not limited to:
- Power supplies and DC-DC converters.
- Motor control and drive systems.
- Industrial automation and control systems.
- Renewable energy systems, such as solar and wind power inverters.
Q & A
- What is the maximum drain-source voltage of the STB10NK60ZT4?
The maximum drain-source voltage is 600 V. - What is the continuous drain current at 25 °C?
The continuous drain current at 25 °C is 10 A. - What is the pulsed drain current capability?
The pulsed drain current capability is 36 A. - What is the on-state resistance of the STB10NK60ZT4?
The on-state resistance is less than 0.75 Ω. - What type of package does the STB10NK60ZT4 come in?
The STB10NK60ZT4 comes in a D2PAK (TO-263) package. - Does the STB10NK60ZT4 have ESD protection?
Yes, the STB10NK60ZT4 has ESD protected gate. - What technology is used in the STB10NK60ZT4?
The STB10NK60ZT4 uses STMicroelectronics' SuperMESH™ technology. - What are some typical applications of the STB10NK60ZT4?
Typical applications include power supplies, motor control, industrial automation, and renewable energy systems. - Is the STB10NK60ZT4 100% avalanche tested?
Yes, the STB10NK60ZT4 is 100% avalanche tested. - What is the maximum gate-source voltage?
The maximum gate-source voltage is ±30 V.