STB10NK60ZT4
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STMicroelectronics STB10NK60ZT4

Manufacturer No:
STB10NK60ZT4
Manufacturer:
STMicroelectronics
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 600V 10A D2PAK
Delivery:
Payment:
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Product Introduction

Overview

The STB10NK60ZT4 is a high-performance N-channel Power MOSFET developed by STMicroelectronics. This device is part of the SuperMESH™ family, known for its optimized strip-based PowerMESH™ layout, which significantly reduces on-resistance and enhances dv/dt capability. The STB10NK60ZT4 is packaged in a D2PAK (TO-263) case, making it suitable for a variety of high-power switching applications.

Key Specifications

ParameterValueUnit
Drain-source voltage (VDS)600V
Drain current (ID) continuous at TC = 25 °C10A
Drain current (ID) continuous at TC = 100 °C5.7A
Pulsed drain current (IDM)36A
Power dissipation (PTOT) at TC = 25 °C115W
Gate-source voltage (VGS)±30V
On-state resistance (RDS(on))< 0.75Ω
PackageD2PAK (TO-263)
MountingSMD
Channel typeEnhanced N-channel
ESD protectionESD protected gate

Key Features

  • Extremely high dv/dt capability, making it suitable for demanding applications.
  • 100% avalanche tested for reliability.
  • Gate charge minimized to reduce switching losses.
  • Zener-protected gate to enhance ESD capability and protect against voltage transients.
  • SuperMESH™ technology for reduced on-resistance and improved performance.

Applications

The STB10NK60ZT4 is designed for high-power switching applications, including but not limited to:

  • Power supplies and DC-DC converters.
  • Motor control and drive systems.
  • Industrial automation and control systems.
  • Renewable energy systems, such as solar and wind power inverters.

Q & A

  1. What is the maximum drain-source voltage of the STB10NK60ZT4?
    The maximum drain-source voltage is 600 V.
  2. What is the continuous drain current at 25 °C?
    The continuous drain current at 25 °C is 10 A.
  3. What is the pulsed drain current capability?
    The pulsed drain current capability is 36 A.
  4. What is the on-state resistance of the STB10NK60ZT4?
    The on-state resistance is less than 0.75 Ω.
  5. What type of package does the STB10NK60ZT4 come in?
    The STB10NK60ZT4 comes in a D2PAK (TO-263) package.
  6. Does the STB10NK60ZT4 have ESD protection?
    Yes, the STB10NK60ZT4 has ESD protected gate.
  7. What technology is used in the STB10NK60ZT4?
    The STB10NK60ZT4 uses STMicroelectronics' SuperMESH™ technology.
  8. What are some typical applications of the STB10NK60ZT4?
    Typical applications include power supplies, motor control, industrial automation, and renewable energy systems.
  9. Is the STB10NK60ZT4 100% avalanche tested?
    Yes, the STB10NK60ZT4 is 100% avalanche tested.
  10. What is the maximum gate-source voltage?
    The maximum gate-source voltage is ±30 V.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):600 V
Current - Continuous Drain (Id) @ 25°C:10A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:750mOhm @ 4.5A, 10V
Vgs(th) (Max) @ Id:4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:70 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:1370 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):115W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:D2PAK
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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In Stock

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STB10NK60ZT4
STB10NK60ZT4
MOSFET N-CH 600V 10A D2PAK
STB10NK60Z-1
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Similar Products

Part Number STB10NK60ZT4 STB13NK60ZT4 STB14NK60ZT4
Manufacturer STMicroelectronics STMicroelectronics STMicroelectronics
Product Status Not For New Designs Active Active
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V 600 V 600 V
Current - Continuous Drain (Id) @ 25°C 10A (Tc) 13A (Tc) 13.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V
Rds On (Max) @ Id, Vgs 750mOhm @ 4.5A, 10V 550mOhm @ 4.5A, 10V 500mOhm @ 6A, 10V
Vgs(th) (Max) @ Id 4.5V @ 250µA 4.5V @ 100µA 4.5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs 70 nC @ 10 V 92 nC @ 10 V 75 nC @ 10 V
Vgs (Max) ±30V ±30V ±30V
Input Capacitance (Ciss) (Max) @ Vds 1370 pF @ 25 V 2030 pF @ 25 V 2220 pF @ 25 V
FET Feature - - -
Power Dissipation (Max) 115W (Tc) 150W (Tc) 160W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Supplier Device Package D2PAK D2PAK D2PAK
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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