Overview
The STB14NK60ZT4 is an N-channel Power MOSFET developed by STMicroelectronics using their advanced SuperMESH™ technology. This device is designed for high-performance applications, particularly in switching environments, and is available in the D2PAK package. It features a drain-source voltage (VDS) of 600 V, a typical on-resistance (RDS(on)) of 0.45 Ω, and a continuous drain current (ID) of 13.5 A at 25°C. The SuperMESH™ technology ensures a significant reduction in on-resistance and enhances the device's dv/dt capability, making it suitable for demanding applications.
Key Specifications
| Parameter | Value | Unit |
|---|---|---|
| Drain-source voltage (VDS) | 600 | V |
| Drain-gate voltage (VDGR) | 600 | V |
| Gate-source voltage (VGS) | ± 30 | V |
| Continuous drain current (ID) at TC = 25°C | 13.5 | A |
| Continuous drain current (ID) at TC = 100°C | 8.5 | A |
| Pulsed drain current (IDM) | 54 | A |
| Total dissipation at TC = 25°C (PTOT) | 160 | W |
| Derating factor | 1.28 | W/°C |
| Static drain-source on-resistance (RDS(on)) | 0.45 | Ω |
| Gate threshold voltage (VGS(th)) | 3 - 4.5 | V |
Key Features
- Extremely high dv/dt capability
- 100% avalanche tested
- Gate charge minimized
- Very low intrinsic capacitances
- Very good manufacturing repeatability
- Zener-protected for enhanced ESD capability
Applications
The STB14NK60ZT4 is primarily used in switching applications due to its high dv/dt capability and low on-resistance. It is suitable for various high-power switching environments, including but not limited to power supplies, motor control, and high-frequency switching circuits.
Q & A
- What is the maximum drain-source voltage of the STB14NK60ZT4? The maximum drain-source voltage (VDS) is 600 V.
- What is the typical on-resistance (RDS(on)) of the STB14NK60ZT4? The typical on-resistance is 0.45 Ω.
- What is the continuous drain current (ID) at 25°C? The continuous drain current at 25°C is 13.5 A.
- What is the total dissipation at 25°C (PTOT)? The total dissipation at 25°C is 160 W.
- What is the derating factor for the STB14NK60ZT4? The derating factor is 1.28 W/°C.
- What technology is used in the STB14NK60ZT4? The device is developed using STMicroelectronics' SuperMESH™ technology.
- What package types are available for the STB14NK60ZT4? The device is available in the D2PAK package.
- What are the key features of the STB14NK60ZT4? Key features include high dv/dt capability, 100% avalanche testing, minimized gate charge, low intrinsic capacitances, good manufacturing repeatability, and Zener protection.
- What are the typical applications for the STB14NK60ZT4? The device is primarily used in switching applications.
- How does the Zener protection enhance the device? The built-in back-to-back Zener diodes enhance the device's ESD capability and avoid the need for external protection components.
