Overview
The STP10NK60Z is an N-channel Power MOSFET developed by STMicroelectronics, utilizing their advanced SuperMESH™ technology. This device is part of the SuperMESH™ series, which is optimized from ST's well-established strip-based PowerMESH™ layout. The STP10NK60Z is designed to offer a significant reduction in on-resistance and enhanced dv/dt capability, making it suitable for demanding applications. It is available in various packages, including TO-220, TO-220FP, and others, to cater to different mounting and design requirements.
Key Specifications
| Parameter | Value | Unit |
|---|---|---|
| Drain-Source Voltage (VDS) | 600 | V |
| Gate-Source Voltage (VGS) | ±30 | V |
| Drain Current (ID) Continuous at TC = 25°C | 10 | A |
| Drain Current (ID) Continuous at TC = 100°C | 5.7 | A |
| Drain-Source On-Resistance (RDS(on)) Max | 0.75 | Ω |
| Total Power Dissipation (PTOT) at TC = 25°C | 115 | W |
| Gate Charge (Qg) | 50 | nC |
| Turn-on Delay Time (td(on)) | 20 | ns |
| Turn-off Delay Time (td(off)) | 55 | ns |
| Rise Time (tr) | 20 | ns |
| Fall Time (tf) | 30 | ns |
| Operating Junction Temperature (Tj) | -55 to 150 | °C |
| Gate-Source Threshold Voltage (VGS(th)) | 3.75 | V |
Key Features
- Extremely high dv/dt capability
- 100% avalanche tested
- Gate charge minimized
- Zener-protected gate to enhance ESD capability and protect against voltage transients
- Low input capacitance and gate charge
- Reduced switching and conduction losses
- Minimum lot-to-lot variations for robust device performance and reliable operation
Applications
The STP10NK60Z is primarily used in switching applications, including but not limited to:
- Motor drives
- DC-DC converters
- Power switches
Q & A
- What is the maximum drain-source voltage of the STP10NK60Z?
The maximum drain-source voltage (VDS) is 600 V. - What is the maximum continuous drain current at 25°C?
The maximum continuous drain current (ID) at 25°C is 10 A. - What is the typical on-resistance of the STP10NK60Z?
The typical on-resistance (RDS(on)) is 0.75 Ω. - What is the total gate charge of the STP10NK60Z?
The total gate charge (Qg) is 50 nC. - What are the key features of the STP10NK60Z?
The key features include extremely high dv/dt capability, 100% avalanche tested, minimized gate charge, and Zener-protected gate. - In what packages is the STP10NK60Z available?
The STP10NK60Z is available in TO-220, TO-220FP, and other packages. - What are the typical applications of the STP10NK60Z?
The typical applications include switching applications such as motor drives, DC-DC converters, and power switches. - What is the operating junction temperature range of the STP10NK60Z?
The operating junction temperature range is -55°C to 150°C. - How does the SuperMESH™ technology benefit the STP10NK60Z?
The SuperMESH™ technology reduces on-resistance and enhances dv/dt capability, making it suitable for demanding applications. - What is the significance of the built-in Zener diodes in the STP10NK60Z?
The built-in Zener diodes enhance ESD capability and protect against voltage transients.
