STP10NK80Z
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STMicroelectronics STP10NK80Z

Manufacturer No:
STP10NK80Z
Manufacturer:
STMicroelectronics
Package:
Tube
Description:
MOSFET N-CH 800V 9A TO220AB
Delivery:
Payment:
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Product Introduction

Overview

The STP10NK80Z is a high-performance N-channel Power MOSFET developed by STMicroelectronics using their advanced SuperMESH™ technology. This device is designed to offer exceptional electrical characteristics, making it suitable for demanding applications. It is available in TO-220, TO-220FP, and TO-247 packages, ensuring versatility in various design requirements.

Key Specifications

ParameterValueUnit
Drain-Source Voltage (VDSS)800V
Drain-Source On Resistance (RDS(on))< 0.90Ω
Continuous Drain Current (ID)9A
Total Dissipation (PTOT)160 (TO-220, TO-247), 40 (TO-220FP)W
Gate-Source Voltage (VGS)± 30V
Gate Threshold Voltage (VGS(th))3 - 4.5V
Turn-on Delay Time (td(on))30 nsns
Turn-off Delay Time (td(off))65 nsns

Key Features

  • Extremely high dv/dt capability
  • 100% avalanche tested
  • Gate charge minimized
  • Very low intrinsic capacitances
  • Very good manufacturing repeatability
  • Zener-protected to enhance ESD capability and absorb voltage transients

Applications

The STP10NK80Z is primarily used in switching applications, where its high dv/dt capability, low on-resistance, and robust avalanche characteristics are particularly beneficial. These applications include power supplies, motor control, and other high-power electronic systems.

Q & A

  1. What is the maximum drain-source voltage of the STP10NK80Z?
    The maximum drain-source voltage (VDSS) is 800 V.
  2. What are the available packages for the STP10NK80Z?
    The device is available in TO-220, TO-220FP, and TO-247 packages.
  3. What is the continuous drain current rating of the STP10NK80Z?
    The continuous drain current (ID) is 9 A at TC = 25°C.
  4. What is the total dissipation power for the TO-220 and TO-247 packages?
    The total dissipation power (PTOT) is 160 W for TO-220 and TO-247 packages.
  5. What is the gate-source voltage range for the STP10NK80Z?
    The gate-source voltage (VGS) range is ± 30 V.
  6. What is the gate threshold voltage range for the STP10NK80Z?
    The gate threshold voltage (VGS(th)) range is 3 to 4.5 V.
  7. What are the turn-on and turn-off delay times for the STP10NK80Z?
    The turn-on delay time (td(on)) is 30 ns, and the turn-off delay time (td(off)) is 65 ns.
  8. Does the STP10NK80Z have built-in Zener protection?
    Yes, the STP10NK80Z has built-in Zener diodes to enhance ESD capability and absorb voltage transients.
  9. What are the typical applications for the STP10NK80Z?
    The STP10NK80Z is typically used in switching applications, including power supplies and motor control.
  10. Is the STP10NK80Z 100% avalanche tested?
    Yes, the STP10NK80Z is 100% avalanche tested.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):800 V
Current - Continuous Drain (Id) @ 25°C:9A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:900mOhm @ 4.5A, 10V
Vgs(th) (Max) @ Id:4.5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs:72 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:2180 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):190W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220
Package / Case:TO-220-3
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Same Series
STP10NK80Z
STP10NK80Z
MOSFET N-CH 800V 9A TO220AB
STW10NK80Z
STW10NK80Z
MOSFET N-CH 800V 9A TO247-3

Similar Products

Part Number STP10NK80Z STP12NK80Z STP10NK50Z STP10NK60Z STP10NK70Z
Manufacturer STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics
Product Status Active Not For New Designs Obsolete Active Obsolete
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 800 V 800 V 500 V 600 V 700 V
Current - Continuous Drain (Id) @ 25°C 9A (Tc) 10.5A (Tc) 9A (Tc) 10A (Tc) 8.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V 10V
Rds On (Max) @ Id, Vgs 900mOhm @ 4.5A, 10V 750mOhm @ 5.25A, 10V 700mOhm @ 4.5A, 10V 750mOhm @ 4.5A, 10V 850mOhm @ 4.5A, 10V
Vgs(th) (Max) @ Id 4.5V @ 100µA 4.5V @ 100µA 4.5V @ 100µA 4.5V @ 250µA 4.5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs 72 nC @ 10 V 87 nC @ 10 V 39.2 nC @ 10 V 70 nC @ 10 V 90 nC @ 10 V
Vgs (Max) ±30V ±30V ±30V ±30V ±30V
Input Capacitance (Ciss) (Max) @ Vds 2180 pF @ 25 V 2620 pF @ 25 V 1219 pF @ 25 V 1370 pF @ 25 V 2000 pF @ 25 V
FET Feature - - - - -
Power Dissipation (Max) 190W (Tc) 190W (Tc) 125W (Tc) 115W (Tc) 150W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole Through Hole Through Hole
Supplier Device Package TO-220 TO-220 TO-220 TO-220 TO-220
Package / Case TO-220-3 TO-220-3 TO-220-3 TO-220-3 TO-220-3

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