STW10NK80Z
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STMicroelectronics STW10NK80Z

Manufacturer No:
STW10NK80Z
Manufacturer:
STMicroelectronics
Package:
Tube
Description:
MOSFET N-CH 800V 9A TO247-3
Delivery:
Payment:
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Product Introduction

Overview

The STW10NK80Z is a high-performance N-channel Power MOSFET developed by STMicroelectronics using their advanced SuperMESH™ technology. This device is designed to offer exceptional performance in high-voltage, high-current applications. It is available in the TO-247 package, which is suitable for a wide range of power electronics applications. The STW10NK80Z features a drain-source voltage (VDSS) of 800V, a low on-resistance (RDS(on)) of less than 0.90Ω, and a continuous drain current (ID) of 9A, making it ideal for demanding switching applications.

Key Specifications

Parameter Value Unit
Drain-Source Voltage (VDSS) 800 V
Drain-Source On-Resistance (RDS(on)) < 0.90 Ω
Continuous Drain Current (ID) at TC = 25°C 9 A
Continuous Drain Current (ID) at TC = 100°C 6 A
Pulsed Drain Current (IDM) 36 A
Total Dissipation at TC = 25°C 160 W
Gate-Source Voltage (VGS) ±30 V
Gate Threshold Voltage (VGS(th)) 3 - 4.5 V
Turn-On Delay Time (td(on)) 30 ns ns
Turn-Off Delay Time (td(off)) 65 ns ns

Key Features

  • Extremely high dv/dt capability, making it suitable for demanding applications.
  • 100% avalanche tested to ensure reliability under high stress conditions.
  • Minimized gate charge for efficient switching.
  • Very low intrinsic capacitances, reducing switching losses.
  • Very good manufacturing repeatability, ensuring consistent performance.
  • Built-in back-to-back Zener diodes for enhanced ESD protection and to safely absorb voltage transients from gate to source.

Applications

  • High current, high speed switching applications.
  • Switch mode power supplies.
  • DC-AC converters for welding, UPS, and motor drive systems.

Q & A

  1. What is the maximum drain-source voltage (VDSS) of the STW10NK80Z?

    The maximum drain-source voltage (VDSS) is 800V.

  2. What is the typical on-resistance (RDS(on)) of the STW10NK80Z?

    The typical on-resistance (RDS(on)) is less than 0.90Ω.

  3. What is the continuous drain current (ID) at TC = 25°C?

    The continuous drain current (ID) at TC = 25°C is 9A.

  4. What is the total dissipation at TC = 25°C?

    The total dissipation at TC = 25°C is 160W.

  5. What are the key features of the STW10NK80Z?

    The key features include extremely high dv/dt capability, 100% avalanche testing, minimized gate charge, very low intrinsic capacitances, and built-in Zener diodes for ESD protection.

  6. In what package is the STW10NK80Z available?

    The STW10NK80Z is available in the TO-247 package.

  7. What are some typical applications of the STW10NK80Z?

    Typical applications include high current, high speed switching, switch mode power supplies, and DC-AC converters for welding, UPS, and motor drive systems.

  8. What is the gate threshold voltage (VGS(th)) of the STW10NK80Z?

    The gate threshold voltage (VGS(th)) ranges from 3 to 4.5V.

  9. What is the turn-on delay time (td(on)) of the STW10NK80Z?

    The turn-on delay time (td(on)) is 30 ns.

  10. What is the purpose of the built-in Zener diodes in the STW10NK80Z?

    The built-in Zener diodes enhance ESD protection and safely absorb possible voltage transients from gate to source.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):800 V
Current - Continuous Drain (Id) @ 25°C:9A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:900mOhm @ 4.5A, 10V
Vgs(th) (Max) @ Id:4.5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs:72 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:2180 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):160W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-247-3
Package / Case:TO-247-3
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Same Series
STW10NK80Z
STW10NK80Z
MOSFET N-CH 800V 9A TO247-3
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STP10NK80ZFP
MOSFET N-CH 800V 9A TO220FP

Similar Products

Part Number STW10NK80Z STW12NK80Z STW18NK80Z STW13NK80Z STW10NK60Z
Manufacturer STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics
Product Status Active Active Obsolete Obsolete Active
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 800 V 800 V 800 V 800 V 600 V
Current - Continuous Drain (Id) @ 25°C 9A (Tc) 10.5A (Tc) 19A (Tc) 12A (Tc) 10A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V 10V
Rds On (Max) @ Id, Vgs 900mOhm @ 4.5A, 10V 750mOhm @ 5.25A, 10V 380mOhm @ 10A, 10V 650mOhm @ 6A, 10V 750mOhm @ 4.5A, 10V
Vgs(th) (Max) @ Id 4.5V @ 100µA 4.5V @ 100µA 4.5V @ 150µA 4.5V @ 100µA 4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 72 nC @ 10 V 87 nC @ 10 V 250 nC @ 10 V 155 nC @ 10 V 70 nC @ 10 V
Vgs (Max) ±30V ±30V ±30V ±30V ±30V
Input Capacitance (Ciss) (Max) @ Vds 2180 pF @ 25 V 2620 pF @ 25 V 6100 pF @ 25 V 3480 pF @ 25 V 1370 pF @ 25 V
FET Feature - - - - -
Power Dissipation (Max) 160W (Tc) 190W (Tc) 350W (Tc) 230W (Tc) 156W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole Through Hole Through Hole
Supplier Device Package TO-247-3 TO-247-3 TO-247-3 TO-247-3 TO-247-3
Package / Case TO-247-3 TO-247-3 TO-247-3 TO-247-3 TO-247-3

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