STW10NK80Z
  • Share:

STMicroelectronics STW10NK80Z

Manufacturer No:
STW10NK80Z
Manufacturer:
STMicroelectronics
Package:
Tube
Description:
MOSFET N-CH 800V 9A TO247-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The STW10NK80Z is a high-performance N-channel Power MOSFET developed by STMicroelectronics using their advanced SuperMESH™ technology. This device is designed to offer exceptional performance in high-voltage, high-current applications. It is available in the TO-247 package, which is suitable for a wide range of power electronics applications. The STW10NK80Z features a drain-source voltage (VDSS) of 800V, a low on-resistance (RDS(on)) of less than 0.90Ω, and a continuous drain current (ID) of 9A, making it ideal for demanding switching applications.

Key Specifications

Parameter Value Unit
Drain-Source Voltage (VDSS) 800 V
Drain-Source On-Resistance (RDS(on)) < 0.90 Ω
Continuous Drain Current (ID) at TC = 25°C 9 A
Continuous Drain Current (ID) at TC = 100°C 6 A
Pulsed Drain Current (IDM) 36 A
Total Dissipation at TC = 25°C 160 W
Gate-Source Voltage (VGS) ±30 V
Gate Threshold Voltage (VGS(th)) 3 - 4.5 V
Turn-On Delay Time (td(on)) 30 ns ns
Turn-Off Delay Time (td(off)) 65 ns ns

Key Features

  • Extremely high dv/dt capability, making it suitable for demanding applications.
  • 100% avalanche tested to ensure reliability under high stress conditions.
  • Minimized gate charge for efficient switching.
  • Very low intrinsic capacitances, reducing switching losses.
  • Very good manufacturing repeatability, ensuring consistent performance.
  • Built-in back-to-back Zener diodes for enhanced ESD protection and to safely absorb voltage transients from gate to source.

Applications

  • High current, high speed switching applications.
  • Switch mode power supplies.
  • DC-AC converters for welding, UPS, and motor drive systems.

Q & A

  1. What is the maximum drain-source voltage (VDSS) of the STW10NK80Z?

    The maximum drain-source voltage (VDSS) is 800V.

  2. What is the typical on-resistance (RDS(on)) of the STW10NK80Z?

    The typical on-resistance (RDS(on)) is less than 0.90Ω.

  3. What is the continuous drain current (ID) at TC = 25°C?

    The continuous drain current (ID) at TC = 25°C is 9A.

  4. What is the total dissipation at TC = 25°C?

    The total dissipation at TC = 25°C is 160W.

  5. What are the key features of the STW10NK80Z?

    The key features include extremely high dv/dt capability, 100% avalanche testing, minimized gate charge, very low intrinsic capacitances, and built-in Zener diodes for ESD protection.

  6. In what package is the STW10NK80Z available?

    The STW10NK80Z is available in the TO-247 package.

  7. What are some typical applications of the STW10NK80Z?

    Typical applications include high current, high speed switching, switch mode power supplies, and DC-AC converters for welding, UPS, and motor drive systems.

  8. What is the gate threshold voltage (VGS(th)) of the STW10NK80Z?

    The gate threshold voltage (VGS(th)) ranges from 3 to 4.5V.

  9. What is the turn-on delay time (td(on)) of the STW10NK80Z?

    The turn-on delay time (td(on)) is 30 ns.

  10. What is the purpose of the built-in Zener diodes in the STW10NK80Z?

    The built-in Zener diodes enhance ESD protection and safely absorb possible voltage transients from gate to source.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):800 V
Current - Continuous Drain (Id) @ 25°C:9A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:900mOhm @ 4.5A, 10V
Vgs(th) (Max) @ Id:4.5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs:72 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:2180 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):160W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-247-3
Package / Case:TO-247-3
0 Remaining View Similar

In Stock

$5.42
138

Please send RFQ , we will respond immediately.

Same Series
STW10NK80Z
STW10NK80Z
MOSFET N-CH 800V 9A TO247-3
STP10NK80ZFP
STP10NK80ZFP
MOSFET N-CH 800V 9A TO220FP

Similar Products

Part Number STW10NK80Z STW12NK80Z STW18NK80Z STW13NK80Z STW10NK60Z
Manufacturer STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics
Product Status Active Active Obsolete Obsolete Active
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 800 V 800 V 800 V 800 V 600 V
Current - Continuous Drain (Id) @ 25°C 9A (Tc) 10.5A (Tc) 19A (Tc) 12A (Tc) 10A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V 10V
Rds On (Max) @ Id, Vgs 900mOhm @ 4.5A, 10V 750mOhm @ 5.25A, 10V 380mOhm @ 10A, 10V 650mOhm @ 6A, 10V 750mOhm @ 4.5A, 10V
Vgs(th) (Max) @ Id 4.5V @ 100µA 4.5V @ 100µA 4.5V @ 150µA 4.5V @ 100µA 4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 72 nC @ 10 V 87 nC @ 10 V 250 nC @ 10 V 155 nC @ 10 V 70 nC @ 10 V
Vgs (Max) ±30V ±30V ±30V ±30V ±30V
Input Capacitance (Ciss) (Max) @ Vds 2180 pF @ 25 V 2620 pF @ 25 V 6100 pF @ 25 V 3480 pF @ 25 V 1370 pF @ 25 V
FET Feature - - - - -
Power Dissipation (Max) 160W (Tc) 190W (Tc) 350W (Tc) 230W (Tc) 156W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole Through Hole Through Hole
Supplier Device Package TO-247-3 TO-247-3 TO-247-3 TO-247-3 TO-247-3
Package / Case TO-247-3 TO-247-3 TO-247-3 TO-247-3 TO-247-3

Related Product By Categories

FQD4P25TM-WS
FQD4P25TM-WS
onsemi
MOSFET P-CH 250V 3.1A DPAK
PHD71NQ03LT,118
PHD71NQ03LT,118
NXP USA Inc.
TRANSISTOR >30MHZ
IXFH60N65X2-4
IXFH60N65X2-4
IXYS
MOSFET N-CH 650V 60A TO247-4L
IRFB3607PBF
IRFB3607PBF
Infineon Technologies
MOSFET N-CH 75V 80A TO220AB
2N7002 TR PBFREE
2N7002 TR PBFREE
Central Semiconductor Corp
MOSFET N-CH 60V 115MA SOT23
STB30N65M5
STB30N65M5
STMicroelectronics
MOSFET N-CH 650V 22A D2PAK
BSS138K-7
BSS138K-7
Diodes Incorporated
MOSFET N-CH 50V SOT23 T&R 3K
STU10N60M2
STU10N60M2
STMicroelectronics
MOSFET N-CH 600V 7.5A IPAK
BUK9880-55A,115
BUK9880-55A,115
NXP USA Inc.
MOSFET N-CH 55V 7A SOT223
STS12NF30L
STS12NF30L
STMicroelectronics
MOSFET N-CH 30V 12A 8SO
BSS84PW
BSS84PW
Infineon Technologies
MOSFET P-CH 60V 150MA SOT323-3
PH1930AL,115
PH1930AL,115
Nexperia USA Inc.
MOSFET N-CH 30V 100A LFPAK56

Related Product By Brand

STP80NF03L-04
STP80NF03L-04
STMicroelectronics
MOSFET N-CH 30V 80A TO220AB
STH15NB50FI
STH15NB50FI
STMicroelectronics
MOSFET N-CH 500V 10.5A ISOWAT218
STM32F407VGT6TR
STM32F407VGT6TR
STMicroelectronics
IC MCU 32BIT 1MB FLASH 100LQFP
STM32F205RBT6TR
STM32F205RBT6TR
STMicroelectronics
IC MCU 32BIT 128KB FLASH 64LQFP
STM32G474CBT6
STM32G474CBT6
STMicroelectronics
IC MCU 32BIT 128KB FLASH 48LQFP
STM32L476VGT6U
STM32L476VGT6U
STMicroelectronics
IC MCU 32BIT 1MB FLASH 100LQFP
FDA801B-VYT
FDA801B-VYT
STMicroelectronics
IC AMP CLASS D QUAD 50W 64LQFP
TS921IDT
TS921IDT
STMicroelectronics
IC OPAMP GP 1 CIRCUIT 8SOIC
M24512-DRDW3TP/K
M24512-DRDW3TP/K
STMicroelectronics
IC EEPROM 512KBIT I2C 8TSSOP
ST1S50PUR
ST1S50PUR
STMicroelectronics
IC REG BUCK ADJ 4A 10VFDFPN
AST1S31HF
AST1S31HF
STMicroelectronics
IC REG BUCK ADJ 3A 8VFDFPN
LF90CPT-TR
LF90CPT-TR
STMicroelectronics
IC REG LINEAR 9V 500MA PPAK