STW10NK80Z
  • Share:

STMicroelectronics STW10NK80Z

Manufacturer No:
STW10NK80Z
Manufacturer:
STMicroelectronics
Package:
Tube
Description:
MOSFET N-CH 800V 9A TO247-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The STW10NK80Z is a high-performance N-channel Power MOSFET developed by STMicroelectronics using their advanced SuperMESH™ technology. This device is designed to offer exceptional performance in high-voltage, high-current applications. It is available in the TO-247 package, which is suitable for a wide range of power electronics applications. The STW10NK80Z features a drain-source voltage (VDSS) of 800V, a low on-resistance (RDS(on)) of less than 0.90Ω, and a continuous drain current (ID) of 9A, making it ideal for demanding switching applications.

Key Specifications

Parameter Value Unit
Drain-Source Voltage (VDSS) 800 V
Drain-Source On-Resistance (RDS(on)) < 0.90 Ω
Continuous Drain Current (ID) at TC = 25°C 9 A
Continuous Drain Current (ID) at TC = 100°C 6 A
Pulsed Drain Current (IDM) 36 A
Total Dissipation at TC = 25°C 160 W
Gate-Source Voltage (VGS) ±30 V
Gate Threshold Voltage (VGS(th)) 3 - 4.5 V
Turn-On Delay Time (td(on)) 30 ns ns
Turn-Off Delay Time (td(off)) 65 ns ns

Key Features

  • Extremely high dv/dt capability, making it suitable for demanding applications.
  • 100% avalanche tested to ensure reliability under high stress conditions.
  • Minimized gate charge for efficient switching.
  • Very low intrinsic capacitances, reducing switching losses.
  • Very good manufacturing repeatability, ensuring consistent performance.
  • Built-in back-to-back Zener diodes for enhanced ESD protection and to safely absorb voltage transients from gate to source.

Applications

  • High current, high speed switching applications.
  • Switch mode power supplies.
  • DC-AC converters for welding, UPS, and motor drive systems.

Q & A

  1. What is the maximum drain-source voltage (VDSS) of the STW10NK80Z?

    The maximum drain-source voltage (VDSS) is 800V.

  2. What is the typical on-resistance (RDS(on)) of the STW10NK80Z?

    The typical on-resistance (RDS(on)) is less than 0.90Ω.

  3. What is the continuous drain current (ID) at TC = 25°C?

    The continuous drain current (ID) at TC = 25°C is 9A.

  4. What is the total dissipation at TC = 25°C?

    The total dissipation at TC = 25°C is 160W.

  5. What are the key features of the STW10NK80Z?

    The key features include extremely high dv/dt capability, 100% avalanche testing, minimized gate charge, very low intrinsic capacitances, and built-in Zener diodes for ESD protection.

  6. In what package is the STW10NK80Z available?

    The STW10NK80Z is available in the TO-247 package.

  7. What are some typical applications of the STW10NK80Z?

    Typical applications include high current, high speed switching, switch mode power supplies, and DC-AC converters for welding, UPS, and motor drive systems.

  8. What is the gate threshold voltage (VGS(th)) of the STW10NK80Z?

    The gate threshold voltage (VGS(th)) ranges from 3 to 4.5V.

  9. What is the turn-on delay time (td(on)) of the STW10NK80Z?

    The turn-on delay time (td(on)) is 30 ns.

  10. What is the purpose of the built-in Zener diodes in the STW10NK80Z?

    The built-in Zener diodes enhance ESD protection and safely absorb possible voltage transients from gate to source.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):800 V
Current - Continuous Drain (Id) @ 25°C:9A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:900mOhm @ 4.5A, 10V
Vgs(th) (Max) @ Id:4.5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs:72 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:2180 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):160W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-247-3
Package / Case:TO-247-3
0 Remaining View Similar

In Stock

$5.42
138

Please send RFQ , we will respond immediately.

Same Series
STW10NK80Z
STW10NK80Z
MOSFET N-CH 800V 9A TO247-3
STP10NK80ZFP
STP10NK80ZFP
MOSFET N-CH 800V 9A TO220FP

Similar Products

Part Number STW10NK80Z STW12NK80Z STW18NK80Z STW13NK80Z STW10NK60Z
Manufacturer STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics
Product Status Active Active Obsolete Obsolete Active
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 800 V 800 V 800 V 800 V 600 V
Current - Continuous Drain (Id) @ 25°C 9A (Tc) 10.5A (Tc) 19A (Tc) 12A (Tc) 10A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V 10V
Rds On (Max) @ Id, Vgs 900mOhm @ 4.5A, 10V 750mOhm @ 5.25A, 10V 380mOhm @ 10A, 10V 650mOhm @ 6A, 10V 750mOhm @ 4.5A, 10V
Vgs(th) (Max) @ Id 4.5V @ 100µA 4.5V @ 100µA 4.5V @ 150µA 4.5V @ 100µA 4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 72 nC @ 10 V 87 nC @ 10 V 250 nC @ 10 V 155 nC @ 10 V 70 nC @ 10 V
Vgs (Max) ±30V ±30V ±30V ±30V ±30V
Input Capacitance (Ciss) (Max) @ Vds 2180 pF @ 25 V 2620 pF @ 25 V 6100 pF @ 25 V 3480 pF @ 25 V 1370 pF @ 25 V
FET Feature - - - - -
Power Dissipation (Max) 160W (Tc) 190W (Tc) 350W (Tc) 230W (Tc) 156W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole Through Hole Through Hole
Supplier Device Package TO-247-3 TO-247-3 TO-247-3 TO-247-3 TO-247-3
Package / Case TO-247-3 TO-247-3 TO-247-3 TO-247-3 TO-247-3

Related Product By Categories

PHD71NQ03LT,118
PHD71NQ03LT,118
NXP USA Inc.
TRANSISTOR >30MHZ
FDMS86255ET150
FDMS86255ET150
onsemi
MOSFET N-CH 150V 10A/63A POWER56
STD10NM60N
STD10NM60N
STMicroelectronics
MOSFET N-CH 600V 10A DPAK
BSS84PH6327XTSA2
BSS84PH6327XTSA2
Infineon Technologies
MOSFET P-CH 60V 170MA SOT23-3
CSD17581Q5AT
CSD17581Q5AT
Texas Instruments
MOSFET N-CH 30V 24A/123A 8VSON
FDBL86063-F085
FDBL86063-F085
onsemi
MOSFET N-CH 100V 240A 8HPSOF
STD4NK60ZT4
STD4NK60ZT4
STMicroelectronics
MOSFET N-CH 600V 4A DPAK
STL36N55M5
STL36N55M5
STMicroelectronics
MOSFET N-CH 550V 22.5A 4PWRFLAT
PMV50XP215
PMV50XP215
NXP USA Inc.
P-CHANNEL MOSFET
2N7002H-13
2N7002H-13
Diodes Incorporated
MOSFET N-CH 60V 170MA SOT23
2N7002BKM,315
2N7002BKM,315
Nexperia USA Inc.
MOSFET N-CH 60V 450MA DFN1006-3
STW6N120K3
STW6N120K3
STMicroelectronics
MOSFET N-CH 1200V 6A TO247

Related Product By Brand

NUCLEO-F303RE
NUCLEO-F303RE
STMicroelectronics
NUCLEO-64 STM32F303RE EVAL BRD
STTH1002CG
STTH1002CG
STMicroelectronics
DIODE ARRAY GP 200V 8A D2PAK
STM32F100VDT6B
STM32F100VDT6B
STMicroelectronics
IC MCU 32BIT 384KB FLASH 100LQFP
STM32F103VFT7
STM32F103VFT7
STMicroelectronics
IC MCU 32BIT 768KB FLASH 100LQFP
STM8AF6223IPCX
STM8AF6223IPCX
STMicroelectronics
IC MCU 8BIT 4KB FLASH 20TSSOP
STM32F215ZET6TR
STM32F215ZET6TR
STMicroelectronics
IC MCU 32BIT 512KB FLASH 144LQFP
STM8AF6246TDSSSX
STM8AF6246TDSSSX
STMicroelectronics
IC MCU 8BIT 16KB FLASH 32LQFP
LM258PT
LM258PT
STMicroelectronics
IC OPAMP GP 2 CIRCUIT 8TSSOP
VND5T035AK-E
VND5T035AK-E
STMicroelectronics
IC PWR DRVR N-CHAN 1:1 PWRSSO24
STM1811LWX7F
STM1811LWX7F
STMicroelectronics
IC SUPERVISOR 1 CHANNEL SOT23-3
LF90CPT-TR
LF90CPT-TR
STMicroelectronics
IC REG LINEAR 9V 500MA PPAK
L78M05CDT
L78M05CDT
STMicroelectronics
IC REG LINEAR 5V 500MA DPAK