Overview
The STW10NK60Z is an N-channel Power MOSFET developed by STMicroelectronics, utilizing their advanced SuperMESH™ technology. This device is designed for high-performance switching applications, offering a significant reduction in on-resistance and enhanced dv/dt capability. The STW10NK60Z is packaged in the TO-247 format and features built-in Zener diodes for gate protection, making it robust against voltage transients and ESD events.
Key Specifications
| Parameter | Value | Unit |
|---|---|---|
| Drain-Source Voltage (VDS) | 600 | V |
| Gate-Source Voltage (VGS) | ±30 | V |
| Drain Current (continuous) at TC = 25 °C (ID) | 10 | A |
| Drain Current (continuous) at TC = 100 °C (ID) | 5.7 | A |
| Pulsed Drain Current (IDM) | 36 | A |
| Total Dissipation at TC = 25 °C (PTOT) | 156 | W |
| On-Resistance (RDS(on)) | < 0.75 | Ω |
| Thermal Resistance Junction-Case (Rthj-case) | 0.8 | °C/W |
| Thermal Resistance Junction-Ambient (Rthj-amb) | 62.5 | °C/W |
Key Features
- Extremely high dv/dt capability, making it suitable for demanding switching applications.
- 100% avalanche tested to ensure reliability under harsh conditions.
- Gate charge minimized for efficient switching.
- Zener-protected to enhance ESD capability and protect against voltage transients.
- SuperMESH™ technology for reduced on-resistance and improved performance.
Applications
The STW10NK60Z is primarily used in switching applications, including but not limited to:
- Power supplies and DC-DC converters.
- Motor control and drive systems.
- High-frequency switching circuits.
- Industrial and automotive electronics.
Q & A
- What is the maximum drain-source voltage of the STW10NK60Z?
The maximum drain-source voltage (VDS) is 600 V. - What is the typical on-resistance of the STW10NK60Z?
The typical on-resistance (RDS(on)) is less than 0.75 Ω. - What is the continuous drain current at 25 °C for the STW10NK60Z?
The continuous drain current (ID) at 25 °C is 10 A. - What is the total dissipation at 25 °C for the STW10NK60Z in the TO-247 package?
The total dissipation (PTOT) at 25 °C is 156 W. - Does the STW10NK60Z have built-in protection against voltage transients?
Yes, it features built-in Zener diodes for gate protection against voltage transients and ESD events. - What technology is used in the STW10NK60Z to enhance its performance?
The STW10NK60Z uses STMicroelectronics' SuperMESH™ technology. - What are the typical applications of the STW10NK60Z?
The STW10NK60Z is used in switching applications such as power supplies, motor control, high-frequency switching circuits, and industrial and automotive electronics. - What is the thermal resistance junction-case (Rthj-case) for the STW10NK60Z in the TO-247 package?
The thermal resistance junction-case (Rthj-case) is 0.8 °C/W. - Is the STW10NK60Z 100% avalanche tested?
Yes, the STW10NK60Z is 100% avalanche tested. - What is the gate-source voltage range for the STW10NK60Z?
The gate-source voltage (VGS) range is ±30 V.
