STW13NK60Z
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STMicroelectronics STW13NK60Z

Manufacturer No:
STW13NK60Z
Manufacturer:
STMicroelectronics
Package:
Tube
Description:
MOSFET N-CH 600V 13A TO247-3
Delivery:
Payment:
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Product Introduction

Overview

The STW13NK60Z is a high-performance N-channel Power MOSFET from STMicroelectronics, part of the SuperMESH™ series. This device is optimized using ST's strip-based PowerMESH™ layout, which significantly reduces on-resistance and enhances dv/dt capability. The STW13NK60Z is designed for demanding applications requiring high efficiency and reliability.

Key Specifications

Parameter Value Unit
Drain-Source Voltage (VDS) 600 V
Gate-Source Voltage (VGS) ±30 V
Continuous Drain Current (ID) at TC = 25 °C 13 A
Continuous Drain Current (ID) at TC = 100 °C 8.2 A
Pulsed Drain Current (IDM) 52 A
Total Dissipation at TC = 25 °C 150 W
Static Drain-Source On Resistance (RDS(on)) < 0.55 Ω
Gate Threshold Voltage (VGS(th)) 3 to 4.5 V
Operating Junction Temperature -55 to 150 °C
Package Type TO-247

Key Features

  • Gate charge minimized
  • Very low intrinsic capacitances
  • Very good manufacturing repeatability
  • Built-in back-to-back Zener diodes for enhanced ESD protection and voltage transient absorption
  • High dv/dt capability for demanding applications

Applications

The STW13NK60Z is suitable for various switching applications, including power supplies, motor control, and other high-power electronic systems where high efficiency, reliability, and robustness are essential.

Q & A

  1. What is the maximum drain-source voltage of the STW13NK60Z?

    The maximum drain-source voltage (VDS) is 600 V.

  2. What is the continuous drain current at 25 °C and 100 °C?

    The continuous drain current is 13 A at 25 °C and 8.2 A at 100 °C.

  3. What is the total dissipation at 25 °C?

    The total dissipation at 25 °C is 150 W.

  4. What is the static drain-source on resistance (RDS(on))?

    The static drain-source on resistance (RDS(on)) is less than 0.55 Ω.

  5. What is the gate threshold voltage range?

    The gate threshold voltage (VGS(th)) ranges from 3 to 4.5 V.

  6. What is the operating junction temperature range?

    The operating junction temperature range is -55 to 150 °C.

  7. What package type is the STW13NK60Z available in?

    The STW13NK60Z is available in the TO-247 package type.

  8. What are the key features of the STW13NK60Z?

    The key features include minimized gate charge, very low intrinsic capacitances, good manufacturing repeatability, and built-in Zener diodes for ESD protection.

  9. What are typical applications for the STW13NK60Z?

    Typical applications include power supplies, motor control, and other high-power electronic systems.

  10. How does the SuperMESH™ technology benefit the STW13NK60Z?

    The SuperMESH™ technology enhances the device's performance by reducing on-resistance and improving dv/dt capability.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):600 V
Current - Continuous Drain (Id) @ 25°C:13A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:550mOhm @ 4.5A, 10V
Vgs(th) (Max) @ Id:4.5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs:92 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:2030 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):150W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-247-3
Package / Case:TO-247-3
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STB13NK60ZT4
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STW13NK60Z
STW13NK60Z
MOSFET N-CH 600V 13A TO247-3

Similar Products

Part Number STW13NK60Z STW16NK60Z STW18NK60Z STW13NK80Z STW14NK60Z STW10NK60Z STW12NK60Z STW13NK50Z
Manufacturer STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics
Product Status Active Obsolete Obsolete Obsolete Obsolete Active Obsolete Obsolete
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V 600 V 600 V 800 V 600 V 600 V 600 V 500 V
Current - Continuous Drain (Id) @ 25°C 13A (Tc) 14A (Tc) 16A (Tc) 12A (Tc) 13.5A (Tc) 10A (Tc) 10A (Tc) 11A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V 10V 10V 10V 10V
Rds On (Max) @ Id, Vgs 550mOhm @ 4.5A, 10V 420mOhm @ 7A, 10V 360mOhm @ 8A, 10V 650mOhm @ 6A, 10V 500mOhm @ 6A, 10V 750mOhm @ 4.5A, 10V 640mOhm @ 5A, 10V 480mOhm @ 6.5A, 10V
Vgs(th) (Max) @ Id 4.5V @ 100µA 4.5V @ 50µA 4.5V @ 100µA 4.5V @ 100µA 4.5V @ 100µA 4.5V @ 250µA 4.5V @ 100µA 4.5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs 92 nC @ 10 V 86 nC @ 10 V 170 nC @ 10 V 155 nC @ 10 V 75 nC @ 10 V 70 nC @ 10 V 59 nC @ 10 V 47 nC @ 10 V
Vgs (Max) ±30V ±30V ±30V ±30V ±30V ±30V ±30V ±30V
Input Capacitance (Ciss) (Max) @ Vds 2030 pF @ 25 V 2650 pF @ 25 V 3540 pF @ 25 V 3480 pF @ 25 V 2220 pF @ 25 V 1370 pF @ 25 V 1740 pF @ 25 V 1600 pF @ 25 V
FET Feature - - - - - - - -
Power Dissipation (Max) 150W (Tc) 190W (Tc) 230W (Tc) 230W (Tc) 160W (Tc) 156W (Tc) 150W (Tc) 140W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole
Supplier Device Package TO-247-3 TO-247-3 TO-247-3 TO-247-3 TO-247-3 TO-247-3 TO-247-3 TO-247-3
Package / Case TO-247-3 TO-247-3 TO-247-3 TO-247-3 TO-247-3 TO-247-3 TO-247-3 TO-247-3

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