STP14NK60Z
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STMicroelectronics STP14NK60Z

Manufacturer No:
STP14NK60Z
Manufacturer:
STMicroelectronics
Package:
Tube
Description:
MOSFET N-CH 600V 13.5A TO220AB
Delivery:
Payment:
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Product Introduction

Overview

The STP14NK60Z is an N-channel Zener-protected Power MOSFET developed by STMicroelectronics using their advanced SuperMESH™ technology. This device is optimized from ST's well-established strip-based PowerMESH™ layout, offering significant improvements in on-resistance and dv/dt capability. It is designed to meet the demands of high-speed switching applications, particularly in off-line power supplies, adaptors, and power factor correction (PFC) circuits. The STP14NK60Z is available in various packages including TO-220, TO-220FP, D2PAK, I2PAK, and TO-247, making it versatile for different design requirements.

Key Specifications

Parameter Value Unit
Drain-source Voltage (VDS) 600 V
Gate-source Voltage (VGS) ±20 V
Drain Current (continuous) at TC = 25°C (ID) 13.5 A
Drain Current (continuous) at TC = 100°C (ID) 8.5 A
Pulsed Drain Current (IDM) 54 A
Total Dissipation at TC = 25°C (PTOT) 160 W
On Resistance (RDS(on)) < 0.45 Ω
Operating Junction Temperature (Tj) -55 to 150 °C
Storage Temperature (Tstg) -55 to 150 °C
Gate-source ESD (VESD(G-S)) 4000 V
Peak Diode Recovery voltage slope (dv/dt) 4.5 V/ns

Key Features

  • Extremely high dv/dt capability
  • 100% avalanche tested
  • Gate charge minimized
  • Very low intrinsic capacitances
  • Very good manufacturing repeatability
  • Built-in back-to-back Zener diodes for enhanced ESD capability and protection against voltage transients

Applications

  • High current, high speed switching applications
  • Off-line power supplies
  • Adaptors and power factor correction (PFC) circuits
  • Lighting systems

Q & A

  1. What is the STP14NK60Z?

    The STP14NK60Z is an N-channel Zener-protected Power MOSFET developed by STMicroelectronics using their SuperMESH™ technology.

  2. What are the key features of the STP14NK60Z?

    The key features include extremely high dv/dt capability, 100% avalanche tested, minimized gate charge, very low intrinsic capacitances, and good manufacturing repeatability.

  3. What are the typical applications of the STP14NK60Z?

    Typical applications include high current, high speed switching, off-line power supplies, adaptors, PFC circuits, and lighting systems.

  4. What is the maximum drain-source voltage (VDS) of the STP14NK60Z?

    The maximum drain-source voltage (VDS) is 600 V.

  5. What is the continuous drain current (ID) at 25°C?

    The continuous drain current (ID) at 25°C is 13.5 A.

  6. What is the on-resistance (RDS(on)) of the STP14NK60Z?

    The on-resistance (RDS(on)) is less than 0.45 Ω.

  7. What is the operating junction temperature range of the STP14NK60Z?

    The operating junction temperature range is -55 to 150 °C.

  8. Does the STP14NK60Z have built-in protection features?

    Yes, it has built-in back-to-back Zener diodes for enhanced ESD capability and protection against voltage transients.

  9. In what packages is the STP14NK60Z available?

    The STP14NK60Z is available in TO-220, TO-220FP, D2PAK, I2PAK, and TO-247 packages.

  10. What is the total dissipation power (PTOT) at 25°C for the STP14NK60Z?

    The total dissipation power (PTOT) at 25°C is 160 W.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):600 V
Current - Continuous Drain (Id) @ 25°C:13.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:500mOhm @ 6A, 10V
Vgs(th) (Max) @ Id:4.5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs:75 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:2220 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):160W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220
Package / Case:TO-220-3
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Same Series
STW14NK60Z
STW14NK60Z
MOSFET N-CH 600V 13.5A TO247-3

Similar Products

Part Number STP14NK60Z STP16NK60Z STP10NK60Z STP12NK60Z STP13NK60Z STP14NK50Z
Manufacturer STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics
Product Status Obsolete Obsolete Active Obsolete Active Active
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V 600 V 600 V 600 V 600 V 500 V
Current - Continuous Drain (Id) @ 25°C 13.5A (Tc) 14A (Tc) 10A (Tc) 10A (Tc) 13A (Tc) 14A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V 10V 10V
Rds On (Max) @ Id, Vgs 500mOhm @ 6A, 10V 420mOhm @ 7A, 10V 750mOhm @ 4.5A, 10V 640mOhm @ 5A, 10V 550mOhm @ 4.5A, 10V 380mOhm @ 6A, 10V
Vgs(th) (Max) @ Id 4.5V @ 100µA 4.5V @ 50µA 4.5V @ 250µA 4.5V @ 100µA 4.5V @ 100µA 4.5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs 75 nC @ 10 V 86 nC @ 10 V 70 nC @ 10 V 59 nC @ 10 V 92 nC @ 10 V 92 nC @ 10 V
Vgs (Max) ±30V ±30V ±30V ±30V ±30V ±30V
Input Capacitance (Ciss) (Max) @ Vds 2220 pF @ 25 V 2650 pF @ 25 V 1370 pF @ 25 V 1740 pF @ 25 V 2030 pF @ 25 V 2000 pF @ 25 V
FET Feature - - - - - -
Power Dissipation (Max) 160W (Tc) 190W (Tc) 115W (Tc) 150W (Tc) 150W (Tc) 150W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) 150°C (TJ) -55°C ~ 150°C (TJ) 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole
Supplier Device Package TO-220 TO-220 TO-220 TO-220 TO-220 TO-220
Package / Case TO-220-3 TO-220-3 TO-220-3 TO-220-3 TO-220-3 TO-220-3

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