Overview
The STP16NK60Z is a high-performance N-channel Power MOSFET from STMicroelectronics, part of the SuperMESH™ series. This device is optimized using ST's well-established strip-based PowerMESH™ layout, which significantly reduces on-resistance and enhances dv/dt capability. The STP16NK60Z is available in TO-220, I2SPAK, and TO-247 packages, making it versatile for various high-power applications. It features built-in back-to-back Zener diodes for enhanced ESD protection and to safely absorb voltage transients between the gate and source, eliminating the need for external components.
Key Specifications
| Parameter | Value | Unit |
|---|---|---|
| Drain-Source Voltage (VDS) | 600 | V |
| Drain-Source On Resistance (RDS(on)) | < 0.42 | Ω |
| Continuous Drain Current (ID) | 14 A (at TC = 25°C), 8.8 A (at TC = 100°C) | A |
| Pulsed Drain Current (IDM) | 56 A | A |
| Gate-Source Voltage (VGS) | ± 30 | V |
| Gate Threshold Voltage (VGS(th)) | 3 to 4.5 | V |
| Avalanche Current (IAR) | 14 A | A |
| Single Pulse Avalanche Energy (EAS) | - | mJ |
| Thermal Resistance Junction-Case (Rthj-case) | 1.14 °C/W (TO-220/I²SPAK), 4.2 °C/W (TO-247) | °C/W |
Key Features
- Extremely high dv/dt capability, making it suitable for demanding applications.
- 100% avalanche tested for reliability.
- Minimized gate charge for efficient switching.
- Very low intrinsic capacitances.
- Integrated back-to-back Zener diodes for enhanced ESD protection and to absorb voltage transients between gate and source.
- Very good manufacturing repeatability.
Applications
- High current, high speed switching applications.
- Ideal for off-line power supplies.
- Switching power supplies.
- High-power electronic devices requiring robust and efficient power management.
Q & A
- What is the maximum drain-source voltage (VDS) of the STP16NK60Z?
The maximum drain-source voltage (VDS) is 600 V.
- What are the available packages for the STP16NK60Z?
The STP16NK60Z is available in TO-220, I2SPAK, and TO-247 packages.
- What is the continuous drain current (ID) at 25°C and 100°C?
The continuous drain current (ID) is 14 A at 25°C and 8.8 A at 100°C.
- What is the gate-source voltage (VGS) range?
The gate-source voltage (VGS) range is ± 30 V.
- Does the STP16NK60Z have built-in protection features?
Yes, it has built-in back-to-back Zener diodes for enhanced ESD protection and to absorb voltage transients between the gate and source.
- What is the thermal resistance junction-case (Rthj-case) for the TO-220/I²SPAK package?
The thermal resistance junction-case (Rthj-case) for the TO-220/I²SPAK package is 1.14 °C/W.
- What are some typical applications of the STP16NK60Z?
Typical applications include high current, high speed switching, off-line power supplies, and other high-power electronic devices.
- Is the STP16NK60Z 100% avalanche tested?
Yes, the STP16NK60Z is 100% avalanche tested for reliability.
- What is the maximum lead temperature for soldering?
The maximum lead temperature for soldering is 300 °C.
- How does the SuperMESH™ layout benefit the STP16NK60Z?
The SuperMESH™ layout significantly reduces on-resistance and enhances dv/dt capability, making it suitable for demanding applications.
