STP16NK65Z
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STMicroelectronics STP16NK65Z

Manufacturer No:
STP16NK65Z
Manufacturer:
STMicroelectronics
Package:
Tube
Description:
MOSFET N-CH 650V 13A TO220AB
Delivery:
Payment:
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Product Introduction

Overview

The STP16NK65Z is an N-channel Zener-protected Power MOSFET developed by STMicroelectronics. This device utilizes ST's advanced SuperMESH™ technology, which is an optimization of the well-established strip-based PowerMESH™ layout. This technology ensures a significant reduction in on-resistance and enhances the device's dv/dt capability, making it suitable for the most demanding applications.

The STP16NK65Z is designed to provide high reliability and performance in various power conversion applications. It is available in several package types, including TO-220, I2PAK, and TO-247, catering to different design requirements.

Key Specifications

Parameter Value
Drain-Source Voltage (Vds) 650 V
Drain Current (Id) 16 A
On-Resistance (Rds(on)) 0.38 Ω
Gate-Source Threshold Voltage (Vgs(th)) 2-4 V
Input Capacitance (Ciss) Low input capacitance
Gate Charge (Qg) Low gate charge
Operating Temperature Range -55°C to 150°C
Package Types TO-220, I2PAK, TO-247
RoHS Compliance Ecopack2

Key Features

  • 100% avalanche tested for enhanced reliability
  • Low input capacitance and gate charge for improved switching performance
  • Low gate input resistance for better control over the MOSFET
  • Extremely high dv/dt and avalanche capabilities for demanding applications
  • Zener protection to safeguard against voltage spikes and surges

Applications

The STP16NK65Z is suitable for a wide range of power conversion applications, including:

  • Switch-Mode Power Supplies (SMPS)
  • Data Center Power Systems
  • Solar Microinverters
  • Industrial and Automotive Systems
  • High-Voltage Power Conversion and Control Systems

Q & A

  1. What is the maximum drain-source voltage of the STP16NK65Z?

    The maximum drain-source voltage (Vds) is 650 V.

  2. What is the maximum drain current of the STP16NK65Z?

    The maximum drain current (Id) is 16 A.

  3. What is the typical on-resistance of the STP16NK65Z?

    The typical on-resistance (Rds(on)) is 0.38 Ω.

  4. What are the package options available for the STP16NK65Z?

    The device is available in TO-220, I2PAK, and TO-247 packages.

  5. Is the STP16NK65Z RoHS compliant?

    Yes, the STP16NK65Z is RoHS compliant with an Ecopack2 rating.

  6. What are the key features of the STP16NK65Z?

    The key features include 100% avalanche testing, low input capacitance and gate charge, low gate input resistance, and high dv/dt and avalanche capabilities.

  7. What are some typical applications for the STP16NK65Z?

    Typical applications include SMPS, data center power systems, solar microinverters, and industrial and automotive systems.

  8. What is the operating temperature range of the STP16NK65Z?

    The operating temperature range is -55°C to 150°C.

  9. Does the STP16NK65Z have Zener protection?

    Yes, the device includes Zener protection to safeguard against voltage spikes and surges.

  10. What technology is used in the STP16NK65Z?

    The device uses STMicroelectronics' advanced SuperMESH™ technology.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):650 V
Current - Continuous Drain (Id) @ 25°C:13A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:500mOhm @ 6.5A, 10V
Vgs(th) (Max) @ Id:4.5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs:89 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:2750 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):190W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220
Package / Case:TO-220-3
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Same Series
STB16NK65Z-S
STB16NK65Z-S
MOSFET N-CH 650V 13A I2PAK

Similar Products

Part Number STP16NK65Z STP16NK60Z
Manufacturer STMicroelectronics STMicroelectronics
Product Status Obsolete Obsolete
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 650 V 600 V
Current - Continuous Drain (Id) @ 25°C 13A (Tc) 14A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 500mOhm @ 6.5A, 10V 420mOhm @ 7A, 10V
Vgs(th) (Max) @ Id 4.5V @ 100µA 4.5V @ 50µA
Gate Charge (Qg) (Max) @ Vgs 89 nC @ 10 V 86 nC @ 10 V
Vgs (Max) ±30V ±30V
Input Capacitance (Ciss) (Max) @ Vds 2750 pF @ 25 V 2650 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 190W (Tc) 190W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) 150°C (TJ)
Mounting Type Through Hole Through Hole
Supplier Device Package TO-220 TO-220
Package / Case TO-220-3 TO-220-3

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