STP10NK80ZFP
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STMicroelectronics STP10NK80ZFP

Manufacturer No:
STP10NK80ZFP
Manufacturer:
STMicroelectronics
Package:
Tube
Description:
MOSFET N-CH 800V 9A TO220FP
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The STP10NK80ZFP is a high-performance N-channel Power MOSFET from STMicroelectronics, part of the SuperMESH™ series. This device is designed to offer exceptional electrical characteristics, making it suitable for a wide range of power management applications. The STP10NK80ZFP is known for its extreme optimization of the PowerMESH™ layout, which enhances its overall performance and reliability.

Key Specifications

ParameterValue
VDS (Drain-Source Voltage)800 V
ID (Drain Current)9 A
RDS(on) (On-Resistance)0.78 Ω @ VGS = 10 V
PD (Power Dissipation)40 W
VGS(th) (Threshold Voltage)4.5 V
PackageTO-220AB-3

Key Features

  • Extremely high dv/dt capability
  • 100% avalanche tested
  • Gate charge minimized
  • Very low intrinsic capacitances
  • Very good manufacturing repeatability

Applications

The STP10NK80ZFP is suitable for various high-power applications, including but not limited to:

  • Switch-mode power supplies
  • Motor control and drives
  • High-frequency switching applications
  • Power factor correction (PFC) circuits

Q & A

  1. What is the maximum drain-source voltage of the STP10NK80ZFP?
    The maximum drain-source voltage is 800 V.
  2. What is the on-resistance of the STP10NK80ZFP at VGS = 10 V?
    The on-resistance is 0.78 Ω.
  3. What is the maximum drain current of the STP10NK80ZFP?
    The maximum drain current is 9 A.
  4. What package type is the STP10NK80ZFP available in?
    The STP10NK80ZFP is available in the TO-220AB-3 package.
  5. Is the STP10NK80ZFP 100% avalanche tested?
    Yes, the STP10NK80ZFP is 100% avalanche tested.
  6. What are some key features of the STP10NK80ZFP?
    Key features include extremely high dv/dt capability, minimized gate charge, very low intrinsic capacitances, and good manufacturing repeatability.
  7. What are some typical applications for the STP10NK80ZFP?
    Typical applications include switch-mode power supplies, motor control and drives, high-frequency switching applications, and power factor correction (PFC) circuits.
  8. What is the power dissipation capability of the STP10NK80ZFP?
    The power dissipation capability is 40 W.
  9. What is the threshold voltage of the STP10NK80ZFP?
    The threshold voltage is 4.5 V.
  10. Where can I find detailed specifications for the STP10NK80ZFP?
    Detailed specifications can be found in the datasheet available on STMicroelectronics' official website and other authorized distributors.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):800 V
Current - Continuous Drain (Id) @ 25°C:9A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:900mOhm @ 4.5A, 10V
Vgs(th) (Max) @ Id:4.5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs:72 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:2180 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):40W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220FP
Package / Case:TO-220-3 Full Pack
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Same Series
STW10NK80Z
STW10NK80Z
MOSFET N-CH 800V 9A TO247-3
STP10NK80ZFP
STP10NK80ZFP
MOSFET N-CH 800V 9A TO220FP

Similar Products

Part Number STP10NK80ZFP STP10NK60ZFP STP10NK70ZFP
Manufacturer STMicroelectronics STMicroelectronics STMicroelectronics
Product Status Active Active Active
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 800 V 600 V 700 V
Current - Continuous Drain (Id) @ 25°C 9A (Tc) 10A (Tc) 8.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V
Rds On (Max) @ Id, Vgs 900mOhm @ 4.5A, 10V 750mOhm @ 4.5A, 10V 850mOhm @ 4.5A, 10V
Vgs(th) (Max) @ Id 4.5V @ 100µA 4.5V @ 250µA 4.5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs 72 nC @ 10 V 70 nC @ 10 V 90 nC @ 10 V
Vgs (Max) ±30V ±30V ±30V
Input Capacitance (Ciss) (Max) @ Vds 2180 pF @ 25 V 1370 pF @ 25 V 2000 pF @ 25 V
FET Feature - - -
Power Dissipation (Max) 40W (Tc) 35W (Tc) 35W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole
Supplier Device Package TO-220FP TO-220FP TO-220FP
Package / Case TO-220-3 Full Pack TO-220-3 Full Pack TO-220-3 Full Pack

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