STP10NK70ZFP
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STMicroelectronics STP10NK70ZFP

Manufacturer No:
STP10NK70ZFP
Manufacturer:
STMicroelectronics
Package:
Tube
Description:
MOSFET N-CH 700V 8.6A TO220FP
Delivery:
Payment:
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Product Introduction

Overview

The STP10NK70ZFP is a high-performance N-Channel MOSFET produced by STMicroelectronics. It belongs to the SuperMESH™ series, known for its optimized strip-based PowerMESH™ layout, which significantly reduces on-resistance and enhances dv/dt capability. This MOSFET is designed for high current, high speed switching applications and is ideal for use in off-line power supplies, adaptors, and power factor correction (PFC) circuits. The device features built-in Zener diodes to protect against voltage transients and improve ESD capability.

Key Specifications

ParameterValueUnit
Drain-Source Voltage (VDS)700V
Gate-Source Voltage (VGS)±30V
Drain Current (ID) at TC = 25°C8.6A
Drain Current (ID) at TC = 100°C5.4A
Static Drain-Source On Resistance (RDS(on))<0.85Ω
Total Dissipation at TC = 25°C35W
Thermal Resistance Junction-case3.6°C/W
Thermal Resistance Junction-ambient62.5°C/W
Operating Junction Temperature-55 to 150°C
Storage Temperature-55 to 150°C
Maximum Lead Temperature For Soldering300°C
Total Gate Charge (Qg)64nC
Rise Time (tr)19ns
Output Capacitance (Coss)190pF

Key Features

  • Extremely high dv/dt capability
  • Improved ESD capability
  • 100% avalanche tested
  • Gate charge minimized
  • Very low intrinsic capacitances
  • Very good manufacturing repeatability
  • Built-in back-to-back Zener diodes for voltage transient protection and enhanced ESD capability
  • Low on-resistance (RDS(on)) of less than 0.85 Ω
  • High drain current of up to 8.6 A at 25°C

Applications

  • High current, high speed switching
  • Off-line power supplies
  • Adaptors
  • Power factor correction (PFC) circuits
  • Motor drives
  • DC-DC converters
  • Power switches

Q & A

  1. What is the maximum drain-source voltage of the STP10NK70ZFP MOSFET?
    The maximum drain-source voltage (VDS) is 700 V.
  2. What is the maximum gate-source voltage of the STP10NK70ZFP MOSFET?
    The maximum gate-source voltage (VGS) is ±30 V.
  3. What is the maximum continuous drain current at 25°C for the STP10NK70ZFP MOSFET?
    The maximum continuous drain current (ID) at 25°C is 8.6 A.
  4. What is the static drain-source on-resistance (RDS(on)) of the STP10NK70ZFP MOSFET?
    The static drain-source on-resistance (RDS(on)) is less than 0.85 Ω.
  5. What is the total dissipation power at 25°C for the STP10NK70ZFP MOSFET in the TO-220FP package?
    The total dissipation power at 25°C is 35 W.
  6. What is the thermal resistance junction-case for the STP10NK70ZFP MOSFET in the TO-220FP package?
    The thermal resistance junction-case is 3.6 °C/W.
  7. What is the operating junction temperature range for the STP10NK70ZFP MOSFET?
    The operating junction temperature range is -55 to 150 °C.
  8. What is the purpose of the built-in Zener diodes in the STP10NK70ZFP MOSFET?
    The built-in Zener diodes are designed to enhance ESD capability and protect against voltage transients.
  9. What are some typical applications of the STP10NK70ZFP MOSFET?
    Typical applications include high current, high speed switching, off-line power supplies, adaptors, PFC circuits, motor drives, DC-DC converters, and power switches.
  10. What package types are available for the STP10NK70ZFP MOSFET?
    The STP10NK70ZFP MOSFET is available in TO-220 and TO-220FP packages.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):700 V
Current - Continuous Drain (Id) @ 25°C:8.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:850mOhm @ 4.5A, 10V
Vgs(th) (Max) @ Id:4.5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs:90 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:2000 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):35W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220FP
Package / Case:TO-220-3 Full Pack
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Same Series
STP10NK70Z
STP10NK70Z
MOSFET N-CH 700V 8.6A TO220AB

Similar Products

Part Number STP10NK70ZFP STP10NK80ZFP STP10NK60ZFP
Manufacturer STMicroelectronics STMicroelectronics STMicroelectronics
Product Status Active Active Active
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 700 V 800 V 600 V
Current - Continuous Drain (Id) @ 25°C 8.6A (Tc) 9A (Tc) 10A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V
Rds On (Max) @ Id, Vgs 850mOhm @ 4.5A, 10V 900mOhm @ 4.5A, 10V 750mOhm @ 4.5A, 10V
Vgs(th) (Max) @ Id 4.5V @ 100µA 4.5V @ 100µA 4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 90 nC @ 10 V 72 nC @ 10 V 70 nC @ 10 V
Vgs (Max) ±30V ±30V ±30V
Input Capacitance (Ciss) (Max) @ Vds 2000 pF @ 25 V 2180 pF @ 25 V 1370 pF @ 25 V
FET Feature - - -
Power Dissipation (Max) 35W (Tc) 40W (Tc) 35W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole
Supplier Device Package TO-220FP TO-220FP TO-220FP
Package / Case TO-220-3 Full Pack TO-220-3 Full Pack TO-220-3 Full Pack

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