STL16N60M2
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STMicroelectronics STL16N60M2

Manufacturer No:
STL16N60M2
Manufacturer:
STMicroelectronics
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 600V 8A POWERFLAT HV
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The STL16N60M2 is an N-channel Power MOSFET developed by STMicroelectronics using the advanced MDmesh M2 technology. This device is characterized by its high voltage rating of 600 V, low on-resistance of 0.29 Ohm (typical), and a drain current of 8 A. The MDmesh M2 technology enhances the device's performance through an improved vertical structure and strip layout, making it suitable for a variety of high-power applications.

Key Specifications

ParameterValue
Voltage Rating (Vds)600 V
On-Resistance (Rds(on))0.29 Ohm (typical)
Drain Current (Id)8 A
PackagePowerFLAT 5x6 HV
Gate Threshold Voltage (Vth)2 V @ 250 uA
Pulse Drain Current (Idp)52 W

Key Features

  • High voltage rating of 600 V, making it suitable for high-power applications.
  • Low on-resistance of 0.29 Ohm (typical), reducing power losses and improving efficiency.
  • High drain current of 8 A, enabling the handling of substantial current loads.
  • MDmesh M2 technology for enhanced performance and reliability.
  • PowerFLAT 5x6 HV package for efficient heat dissipation and compact design.

Applications

  • Power supplies and DC-DC converters.
  • Motor control and drive systems.
  • Industrial automation and control systems.
  • Renewable energy systems, such as solar and wind power.
  • High-power switching applications.

Q & A

  1. What is the voltage rating of the STL16N60M2 MOSFET? The voltage rating is 600 V.
  2. What is the typical on-resistance of the STL16N60M2? The typical on-resistance is 0.29 Ohm.
  3. What is the maximum drain current of the STL16N60M2? The maximum drain current is 8 A.
  4. What technology is used in the STL16N60M2? The STL16N60M2 uses MDmesh M2 technology.
  5. In what package is the STL16N60M2 available? The STL16N60M2 is available in the PowerFLAT 5x6 HV package.
  6. What are some common applications of the STL16N60M2? Common applications include power supplies, motor control systems, industrial automation, renewable energy systems, and high-power switching applications.
  7. What is the gate threshold voltage of the STL16N60M2? The gate threshold voltage is 2 V @ 250 uA.
  8. Is the STL16N60M2 RoHS compliant? Yes, the STL16N60M2 is RoHS compliant.
  9. What is the pulse drain current rating of the STL16N60M2? The pulse drain current rating is 52 W.
  10. Where can I find detailed specifications for the STL16N60M2? Detailed specifications can be found in the datasheet available on STMicroelectronics' official website or through distributors like Digi-Key, Mouser, and Avnet.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):600 V
Current - Continuous Drain (Id) @ 25°C:8A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:355mOhm @ 4A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:19 nC @ 10 V
Vgs (Max):±25V
Input Capacitance (Ciss) (Max) @ Vds:704 pF @ 100 V
FET Feature:- 
Power Dissipation (Max):52W (Tc)
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PowerFlat™ (5x6) HV
Package / Case:8-PowerVDFN
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$2.59
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Similar Products

Part Number STL16N60M2 STL16N60M6 STL16N65M2 STL18N60M2 STL19N60M2 STL10N60M2 STL12N60M2 STL13N60M2
Manufacturer STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics
Product Status Active Active Active Active Active Obsolete Active Active
FET Type N-Channel - N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) - MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V - 650 V 600 V 600 V 600 V 600 V 600 V
Current - Continuous Drain (Id) @ 25°C 8A (Tc) 8A (Tc) 7.5A (Tc) 9A (Tc) 11A (Tc) 5.5A (Tc) 6.5A (Tc) 7A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V - 10V 10V 10V 10V 10V 10V
Rds On (Max) @ Id, Vgs 355mOhm @ 4A, 10V - 395mOhm @ 3.5A, 10V 308mOhm @ 4.5A, 10V - 660mOhm @ 2.5A, 10V 495mOhm @ 4.5A, 10V 420mOhm @ 4.5A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA - 4V @ 250µA 4V @ 250µA 4V @ 250µA 4V @ 250µA 4V @ 250µA 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 19 nC @ 10 V - 19.5 nC @ 10 V 21.5 nC @ 10 V 21.5 nC @ 10 V 13.5 nC @ 10 V 16 nC @ 10 V 17 nC @ 10 V
Vgs (Max) ±25V - ±25V ±25V ±25V ±25V ±25V ±25V
Input Capacitance (Ciss) (Max) @ Vds 704 pF @ 100 V - 718 pF @ 100 V 791 pF @ 100 V 791 pF @ 100 V 400 pF @ 100 V 538 pF @ 100 V 580 pF @ 100 V
FET Feature - - - - - - - -
Power Dissipation (Max) 52W (Tc) - 56W (Tc) 57W (Tc) 90W (Tc) 48W (Tc) 52W (Tc) 55W (Tc)
Operating Temperature 150°C (TJ) - -55°C ~ 150°C (TJ) 150°C (TJ) -55°C ~ 150°C (TJ) 150°C (TJ) -55°C ~ 150°C (TJ) 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package PowerFlat™ (5x6) HV PowerFlat™ (5x6) HV PowerFlat™ (5x6) HV PowerFlat™ (5x6) HV PowerFlat™ (8x8) HV PowerFlat™ (5x6) HV PowerFlat™ (5x6) HV PowerFlat™ (5x6) HV
Package / Case 8-PowerVDFN 8-PowerVDFN 8-PowerVDFN 8-PowerVDFN 8-PowerVDFN 8-PowerVDFN 8-PowerVDFN 8-PowerVDFN

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