English
STL16N60M6
  • Share:

STMicroelectronics STL16N60M6

Manufacturer No:
STL16N60M6
Manufacturer:
STMicroelectronics
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 600V POWERFLAT HV
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The STL16N60M6 is a high-performance N-channel power MOSFET from STMicroelectronics, utilizing the advanced MDmesh M6 technology. This device is part of the well-established MDmesh family of Super Junction (SJ) MOSFETs, which have been enhanced with the latest advancements. The STL16N60M6 is designed to offer high efficiency, reliability, and robustness, making it suitable for a variety of power management applications.

Key Specifications

ParameterValueUnit
VDS (Drain-Source Voltage)600V
RDS(on) (On-State Resistance)0.30Ω
ID (Drain Current)8A
VGS(th) (Threshold Voltage)2-4V
PD (Power Dissipation)--
PackagePowerFLAT 5x6 HV-

Key Features

  • High voltage rating of 600 V, making it suitable for high-power applications.
  • Low on-state resistance (RDS(on)) of 0.30 Ω, which minimizes power losses and enhances efficiency.
  • High drain current (ID) of 8 A, supporting a wide range of load conditions.
  • MDmesh M6 technology for improved performance and reliability.
  • Compact PowerFLAT 5x6 HV package, optimizing space and thermal management.

Applications

  • Power supplies and DC-DC converters.
  • Motor control and drive systems.
  • Industrial automation and control systems.
  • Renewable energy systems, such as solar and wind power inverters.
  • High-power audio amplifiers and other high-current applications.

Q & A

  1. What is the maximum drain-source voltage of the STL16N60M6?
    The maximum drain-source voltage (VDS) is 600 V.
  2. What is the typical on-state resistance of the STL16N60M6?
    The typical on-state resistance (RDS(on)) is 0.30 Ω.
  3. What is the maximum drain current of the STL16N60M6?
    The maximum drain current (ID) is 8 A.
  4. What package type is used for the STL16N60M6?
    The STL16N60M6 is packaged in a PowerFLAT 5x6 HV package.
  5. What technology does the STL16N60M6 use?
    The STL16N60M6 uses the advanced MDmesh M6 technology.
  6. What are some typical applications for the STL16N60M6?
    Typical applications include power supplies, motor control systems, industrial automation, renewable energy systems, and high-power audio amplifiers.
  7. What is the threshold voltage range of the STL16N60M6?
    The threshold voltage (VGS(th)) range is between 2 and 4 V.
  8. Is the STL16N60M6 suitable for high-power applications?
    Yes, the STL16N60M6 is designed for high-power applications due to its high voltage and current ratings.
  9. How does the MDmesh M6 technology benefit the STL16N60M6?
    The MDmesh M6 technology enhances the performance and reliability of the STL16N60M6 by providing lower on-state resistance and improved thermal management.
  10. Where can I find detailed specifications for the STL16N60M6?
    Detailed specifications can be found in the datasheet available on the STMicroelectronics website or through authorized distributors.

Product Attributes

FET Type:- 
Technology:- 
Drain to Source Voltage (Vdss):- 
Current - Continuous Drain (Id) @ 25°C:8A (Tc)
Drive Voltage (Max Rds On, Min Rds On):- 
Rds On (Max) @ Id, Vgs:- 
Vgs(th) (Max) @ Id:- 
Gate Charge (Qg) (Max) @ Vgs:- 
Vgs (Max):- 
Input Capacitance (Ciss) (Max) @ Vds:- 
FET Feature:- 
Power Dissipation (Max):- 
Operating Temperature:- 
Mounting Type:Surface Mount
Supplier Device Package:PowerFlat™ (5x6) HV
Package / Case:8-PowerVDFN
0 Remaining View Similar

In Stock

$2.91
292

Please send RFQ , we will respond immediately.

Same Series
DD15S20LV30/AA
DD15S20LV30/AA
CONN D-SUB HD RCPT 15P SLDR CUP
CBC46W4S10G0X/AA
CBC46W4S10G0X/AA
CONN D-SUB RCPT 46POS CRIMP
DD15S20J0S/AA
DD15S20J0S/AA
CONN D-SUB HD RCPT 15P SLDR CUP
CBC9W4S10HTS/AA
CBC9W4S10HTS/AA
CONN D-SUB RCPT 9POS CRIMP
DD26S2S00X/AA
DD26S2S00X/AA
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S2S500X/AA
DD26S2S500X/AA
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S2S0T0
DD26S2S0T0
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S200T2X
DD26S200T2X
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S200E0/AA
DD26S200E0/AA
CONN D-SUB HD RCPT 26P SLDR CUP
DD62M32S50V3S/AA
DD62M32S50V3S/AA
CONN D-SUB HD PLUG 62P VERT SLDR
DD26S20WTX
DD26S20WTX
CONN D-SUB HD RCPT 26P SLDR CUP
DD44S32S0V5X
DD44S32S0V5X
CONN D-SUB HD RCPT 44P VERT SLDR

Similar Products

Part Number STL16N60M6 STL36N60M6 STL10N60M6 STL12N60M6 STL13N60M6 STL16N60M2
Manufacturer STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics
Product Status Active Active Active Active Active Active
FET Type - N-Channel N-Channel N-Channel N-Channel N-Channel
Technology - MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) - 600 V 600 V 600 V 600 V 600 V
Current - Continuous Drain (Id) @ 25°C 8A (Tc) 25A (Tc) 5.5A (Tc) 6.4A (Tc) 7A (Tc) 8A (Tc)
Drive Voltage (Max Rds On, Min Rds On) - 10V 10V 10V 10V 10V
Rds On (Max) @ Id, Vgs - 110mOhm @ 12.5A, 10V 660mOhm @ 2.75A, 10V 490mOhm @ 3.2A, 10V 415mOhm @ 3.5A, 10V 355mOhm @ 4A, 10V
Vgs(th) (Max) @ Id - 4.75V @ 250µA 4.75V @ 250µA 4.75V @ 250µA 4.75V @ 250µA 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs - 44.3 nC @ 10 V - - - 19 nC @ 10 V
Vgs (Max) - ±25V ±25V ±25V ±25V ±25V
Input Capacitance (Ciss) (Max) @ Vds - 1960 pF @ 100 V - - - 704 pF @ 100 V
FET Feature - - - - - -
Power Dissipation (Max) - 160W (Tc) 48W (Tc) 48W (Tc) 52W (Tc) 52W (Tc)
Operating Temperature - -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package PowerFlat™ (5x6) HV PowerFlat™ (8x8) HV PowerFlat™ (5x6) HV PowerFlat™ (5x6) HV PowerFlat™ (5x6) HV PowerFlat™ (5x6) HV
Package / Case 8-PowerVDFN 8-PowerVDFN 8-PowerVDFN 8-PowerVDFN 8-PowerVDFN 8-PowerVDFN

Related Product By Categories

FDB12N50TM
FDB12N50TM
onsemi
MOSFET N-CH 500V 11.5A D2PAK
AO4407A
AO4407A
Alpha & Omega Semiconductor Inc.
MOSFET P-CH 30V 12A 8SOIC
FQD7P06TM
FQD7P06TM
onsemi
MOSFET P-CH 60V 5.4A DPAK
STD5N52U
STD5N52U
STMicroelectronics
MOSFET N-CH 525V 4.4A DPAK
PSMN0R9-25YLDX
PSMN0R9-25YLDX
Nexperia USA Inc.
MOSFET N-CH 25V 300A LFPAK56
NTMFS6H818NT1G
NTMFS6H818NT1G
onsemi
MOSFET N-CH 80V 20A/123A 5DFN
STF18NM60N
STF18NM60N
STMicroelectronics
MOSFET N-CH 600V 13A TO220FP
FDMS86163P-23507X
FDMS86163P-23507X
onsemi
FET -100V 22.0 MOHM PQFN56
BSH112,235
BSH112,235
NXP USA Inc.
MOSFET N-CH 60V 300MA TO236AB
BSS84PW
BSS84PW
Infineon Technologies
MOSFET P-CH 60V 150MA SOT323-3
FQD13N10LTM_NBEL001
FQD13N10LTM_NBEL001
onsemi
MOSFET N-CH 100V 10A DPAK
BSS138-F169
BSS138-F169
onsemi
MOSFET N-CH SOT23

Related Product By Brand

SMA6T28CAY
SMA6T28CAY
STMicroelectronics
TVS DIODE 24VWM 44.3VC SMA
ESDA6V1-5SC6Y
ESDA6V1-5SC6Y
STMicroelectronics
TVS DIODE 5.2VWM 11.4VC SOT23-6
SMA6J8.5CA-TR
SMA6J8.5CA-TR
STMicroelectronics
TVS DIODE 8.5VWM 18.7VC SMA
STPS20L25CT
STPS20L25CT
STMicroelectronics
DIODE ARRAY SCHOTTKY 25V TO220AB
STD6N80K5
STD6N80K5
STMicroelectronics
MOSFET N-CH 800V 4.5A DPAK
STP11NK40Z
STP11NK40Z
STMicroelectronics
MOSFET N-CH 400V 9A TO220AB
STM32L412CBU6
STM32L412CBU6
STMicroelectronics
IC MCU 32BIT 128KB FLSH 48UFQFPN
STM32F072RBH6
STM32F072RBH6
STMicroelectronics
IC MCU 32BIT 128KB FLASH 64UFBGA
TSV6290AICT
TSV6290AICT
STMicroelectronics
IC OPAMP GP 1 CIRCUIT SC70-6
74LCX573MTR
74LCX573MTR
STMicroelectronics
IC LATCH OCTAL D-TYPE 20-SOIC
LM217MDT-TR
LM217MDT-TR
STMicroelectronics
IC REG LINEAR POS ADJ 500MA DPAK
LIS302DL
LIS302DL
STMicroelectronics
ACCEL 2.3-9.2G I2C/SPI 14LGA