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STL16N60M6
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STMicroelectronics STL16N60M6

Manufacturer No:
STL16N60M6
Manufacturer:
STMicroelectronics
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 600V POWERFLAT HV
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The STL16N60M6 is a high-performance N-channel power MOSFET from STMicroelectronics, utilizing the advanced MDmesh M6 technology. This device is part of the well-established MDmesh family of Super Junction (SJ) MOSFETs, which have been enhanced with the latest advancements. The STL16N60M6 is designed to offer high efficiency, reliability, and robustness, making it suitable for a variety of power management applications.

Key Specifications

ParameterValueUnit
VDS (Drain-Source Voltage)600V
RDS(on) (On-State Resistance)0.30Ω
ID (Drain Current)8A
VGS(th) (Threshold Voltage)2-4V
PD (Power Dissipation)--
PackagePowerFLAT 5x6 HV-

Key Features

  • High voltage rating of 600 V, making it suitable for high-power applications.
  • Low on-state resistance (RDS(on)) of 0.30 Ω, which minimizes power losses and enhances efficiency.
  • High drain current (ID) of 8 A, supporting a wide range of load conditions.
  • MDmesh M6 technology for improved performance and reliability.
  • Compact PowerFLAT 5x6 HV package, optimizing space and thermal management.

Applications

  • Power supplies and DC-DC converters.
  • Motor control and drive systems.
  • Industrial automation and control systems.
  • Renewable energy systems, such as solar and wind power inverters.
  • High-power audio amplifiers and other high-current applications.

Q & A

  1. What is the maximum drain-source voltage of the STL16N60M6?
    The maximum drain-source voltage (VDS) is 600 V.
  2. What is the typical on-state resistance of the STL16N60M6?
    The typical on-state resistance (RDS(on)) is 0.30 Ω.
  3. What is the maximum drain current of the STL16N60M6?
    The maximum drain current (ID) is 8 A.
  4. What package type is used for the STL16N60M6?
    The STL16N60M6 is packaged in a PowerFLAT 5x6 HV package.
  5. What technology does the STL16N60M6 use?
    The STL16N60M6 uses the advanced MDmesh M6 technology.
  6. What are some typical applications for the STL16N60M6?
    Typical applications include power supplies, motor control systems, industrial automation, renewable energy systems, and high-power audio amplifiers.
  7. What is the threshold voltage range of the STL16N60M6?
    The threshold voltage (VGS(th)) range is between 2 and 4 V.
  8. Is the STL16N60M6 suitable for high-power applications?
    Yes, the STL16N60M6 is designed for high-power applications due to its high voltage and current ratings.
  9. How does the MDmesh M6 technology benefit the STL16N60M6?
    The MDmesh M6 technology enhances the performance and reliability of the STL16N60M6 by providing lower on-state resistance and improved thermal management.
  10. Where can I find detailed specifications for the STL16N60M6?
    Detailed specifications can be found in the datasheet available on the STMicroelectronics website or through authorized distributors.

Product Attributes

FET Type:- 
Technology:- 
Drain to Source Voltage (Vdss):- 
Current - Continuous Drain (Id) @ 25°C:8A (Tc)
Drive Voltage (Max Rds On, Min Rds On):- 
Rds On (Max) @ Id, Vgs:- 
Vgs(th) (Max) @ Id:- 
Gate Charge (Qg) (Max) @ Vgs:- 
Vgs (Max):- 
Input Capacitance (Ciss) (Max) @ Vds:- 
FET Feature:- 
Power Dissipation (Max):- 
Operating Temperature:- 
Mounting Type:Surface Mount
Supplier Device Package:PowerFlat™ (5x6) HV
Package / Case:8-PowerVDFN
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Similar Products

Part Number STL16N60M6 STL36N60M6 STL10N60M6 STL12N60M6 STL13N60M6 STL16N60M2
Manufacturer STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics
Product Status Active Active Active Active Active Active
FET Type - N-Channel N-Channel N-Channel N-Channel N-Channel
Technology - MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) - 600 V 600 V 600 V 600 V 600 V
Current - Continuous Drain (Id) @ 25°C 8A (Tc) 25A (Tc) 5.5A (Tc) 6.4A (Tc) 7A (Tc) 8A (Tc)
Drive Voltage (Max Rds On, Min Rds On) - 10V 10V 10V 10V 10V
Rds On (Max) @ Id, Vgs - 110mOhm @ 12.5A, 10V 660mOhm @ 2.75A, 10V 490mOhm @ 3.2A, 10V 415mOhm @ 3.5A, 10V 355mOhm @ 4A, 10V
Vgs(th) (Max) @ Id - 4.75V @ 250µA 4.75V @ 250µA 4.75V @ 250µA 4.75V @ 250µA 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs - 44.3 nC @ 10 V - - - 19 nC @ 10 V
Vgs (Max) - ±25V ±25V ±25V ±25V ±25V
Input Capacitance (Ciss) (Max) @ Vds - 1960 pF @ 100 V - - - 704 pF @ 100 V
FET Feature - - - - - -
Power Dissipation (Max) - 160W (Tc) 48W (Tc) 48W (Tc) 52W (Tc) 52W (Tc)
Operating Temperature - -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package PowerFlat™ (5x6) HV PowerFlat™ (8x8) HV PowerFlat™ (5x6) HV PowerFlat™ (5x6) HV PowerFlat™ (5x6) HV PowerFlat™ (5x6) HV
Package / Case 8-PowerVDFN 8-PowerVDFN 8-PowerVDFN 8-PowerVDFN 8-PowerVDFN 8-PowerVDFN

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