Overview
The STL13N60M6 is a high-performance N-channel MOSFET developed by STMicroelectronics, utilizing the advanced MDmesh M6 technology. This device is designed to offer improved switching behavior and reduced losses, making it highly efficient for various power applications. The MOSFET is packaged in the PowerFLAT 5x6 HV package, which provides a compact and thermally efficient solution. With a maximum drain-source voltage (VDS) of 600 V and a continuous drain current (ID) of 7 A, this MOSFET is well-suited for demanding power management tasks.
Key Specifications
| Parameter | Value | Unit |
|---|---|---|
| Order Code | STL13N60M6 | |
| VDS (Drain-Source Voltage) | 600 | V |
| RDS(on) max. (Drain-Source On-Resistance) | 415 | mΩ |
| ID (Continuous Drain Current) at Tcase = 25 °C | 7 | A |
| ID (Continuous Drain Current) at Tcase = 100 °C | 4.5 | A |
| IDM (Pulsed Drain Current) | 28 | A |
| PTOT (Total Power Dissipation) at Tcase = 25 °C | 52 | W |
| VGS (Gate-Source Voltage) | ±25 | V |
| Tstg (Storage Temperature Range) | -55 to 150 | °C |
| Rthj-case (Thermal Resistance Junction-Case) | 2.4 | °C/W |
Key Features
- Reduced switching losses due to advanced MDmesh M6 technology.
- Lower RDS(on) per area compared to previous generations.
- Low gate input resistance for improved control.
- 100% avalanche tested for reliability.
- Zener-protected for enhanced robustness.
Applications
- Switching applications requiring high efficiency and low losses.
- LLC (Inductor-Inductor-Capacitor) converters.
- Boost PFC (Power Factor Correction) converters.
Q & A
- What is the maximum drain-source voltage (VDS) of the STL13N60M6 MOSFET?
The maximum drain-source voltage (VDS) is 600 V.
- What is the continuous drain current (ID) at Tcase = 25 °C?
The continuous drain current (ID) at Tcase = 25 °C is 7 A.
- What is the typical drain-source on-resistance (RDS(on)) of the STL13N60M6?
The typical drain-source on-resistance (RDS(on)) is 330 mΩ.
- What is the total power dissipation (PTOT) at Tcase = 25 °C?
The total power dissipation (PTOT) at Tcase = 25 °C is 52 W.
- What is the storage temperature range for the STL13N60M6?
The storage temperature range is -55 to 150 °C.
- What are the key features of the MDmesh M6 technology used in the STL13N60M6?
The key features include reduced switching losses, lower RDS(on) per area, low gate input resistance, 100% avalanche tested, and Zener-protected.
- In what package is the STL13N60M6 MOSFET available?
The STL13N60M6 is available in the PowerFLAT 5x6 HV package.
- What are some typical applications for the STL13N60M6 MOSFET?
Typical applications include switching applications, LLC converters, and Boost PFC converters.
- What is the thermal resistance junction-case (Rthj-case) for the STL13N60M6?
The thermal resistance junction-case (Rthj-case) is 2.4 °C/W.
- Is the STL13N60M6 MOSFET suitable for high-frequency switching applications?
Yes, the STL13N60M6 is suitable for high-frequency switching applications due to its reduced switching losses and low RDS(on).
