STL13N60M2
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STMicroelectronics STL13N60M2

Manufacturer No:
STL13N60M2
Manufacturer:
STMicroelectronics
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 600V 7A POWERFLAT HV
Delivery:
Payment:
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Product Introduction

Overview

The STL13N60M2 is an N-channel Power MOSFET developed by STMicroelectronics using the advanced MDmesh II Plus™ technology. This device is designed to offer high efficiency and performance in demanding applications. It features a vertical structure combined with a strip layout, resulting in one of the world's lowest on-resistance and gate charge. The STL13N60M2 is packaged in a PowerFLAT™ 5x6 HV package, making it suitable for high-power switching applications.

Key Specifications

Parameter Value Unit
Order Code STL13N60M2
Drain-Source Voltage (VDS) 600 V
Drain Current (ID) Continuous at TC = 25 °C 7 A
Drain Current (ID) Continuous at TC = 100 °C 4.7 A
Drain Current (IDM) Pulsed 28 A
Gate-Source Voltage (VGS) ±25 V
Static Drain-Source On-Resistance (RDS(on)) 0.39 - 0.42 Ω
Gate Threshold Voltage (VGS(th)) 2 - 4 V
Maximum Junction Temperature (Tj) 150 °C
Thermal Resistance Junction-Case (Rthj-case) 2.27 °C/W
Thermal Resistance Junction-PCB (Rthj-pcb) 59 °C/W
Package PowerFLAT™ 5x6 HV

Key Features

  • Extremely low gate charge (Qg)
  • Lower RDS(on) x area compared to previous generations
  • Low gate input resistance
  • 100% avalanche tested
  • Zener-protected
  • Optimized switching characteristics for high efficiency converters

Applications

The STL13N60M2 is particularly suited for high-efficiency switching applications, including but not limited to:

  • High-power DC-DC converters
  • Power supplies
  • Motor control and drive systems
  • Industrial power management systems

Q & A

  1. What is the maximum drain-source voltage (VDS) of the STL13N60M2?

    The maximum drain-source voltage (VDS) is 600 V.

  2. What is the continuous drain current (ID) at 25 °C?

    The continuous drain current (ID) at 25 °C is 7 A.

  3. What is the maximum gate-source voltage (VGS)?

    The maximum gate-source voltage (VGS) is ±25 V.

  4. What is the typical static drain-source on-resistance (RDS(on))?

    The typical static drain-source on-resistance (RDS(on)) is 0.39 Ω.

  5. What is the maximum junction temperature (Tj)?

    The maximum junction temperature (Tj) is 150 °C.

  6. What is the thermal resistance junction-case (Rthj-case)?

    The thermal resistance junction-case (Rthj-case) is 2.27 °C/W.

  7. What package type is the STL13N60M2 available in?

    The STL13N60M2 is available in the PowerFLAT™ 5x6 HV package.

  8. What are the key features of the STL13N60M2?

    The key features include extremely low gate charge, lower RDS(on) x area, low gate input resistance, 100% avalanche tested, and Zener-protected.

  9. What are typical applications for the STL13N60M2?

    Typical applications include high-power DC-DC converters, power supplies, motor control and drive systems, and industrial power management systems.

  10. Is the STL13N60M2 suitable for high-efficiency converters?

    Yes, the STL13N60M2 is optimized for high-efficiency converters due to its low on-resistance and gate charge.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):600 V
Current - Continuous Drain (Id) @ 25°C:7A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:420mOhm @ 4.5A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:17 nC @ 10 V
Vgs (Max):±25V
Input Capacitance (Ciss) (Max) @ Vds:580 pF @ 100 V
FET Feature:- 
Power Dissipation (Max):55W (Tc)
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PowerFlat™ (5x6) HV
Package / Case:8-PowerVDFN
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Manufacturer STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics
Product Status Active Active Active Active Active Active Active Obsolete Active Active
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V 600 V 600 V 600 V 650 V 600 V 600 V 600 V 600 V 600 V
Current - Continuous Drain (Id) @ 25°C 7A (Tc) 8A (Tc) 22A (Tc) 7A (Tc) 6.5A (Tc) 9A (Tc) 11A (Tc) 5.5A (Tc) 6.5A (Tc) 8A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V 10V 10V 10V 10V 10V 10V
Rds On (Max) @ Id, Vgs 420mOhm @ 4.5A, 10V 355mOhm @ 4A, 10V 135mOhm @ 10.75A, 10V 415mOhm @ 3.5A, 10V 475mOhm @ 3A, 10V 308mOhm @ 4.5A, 10V - 660mOhm @ 2.5A, 10V 495mOhm @ 4.5A, 10V 370mOhm @ 4A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA 4V @ 250µA 4V @ 250µA 4.75V @ 250µA 4V @ 250µA 4V @ 250µA 4V @ 250µA 4V @ 250µA 4V @ 250µA 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 17 nC @ 10 V 19 nC @ 10 V 47 nC @ 10 V - 17 nC @ 10 V 21.5 nC @ 10 V 21.5 nC @ 10 V 13.5 nC @ 10 V 16 nC @ 10 V 19 nC @ 10 V
Vgs (Max) ±25V ±25V ±25V ±25V ±25V ±25V ±25V ±25V ±25V ±25V
Input Capacitance (Ciss) (Max) @ Vds 580 pF @ 100 V 704 pF @ 100 V 1700 pF @ 100 V - 590 pF @ 100 V 791 pF @ 100 V 791 pF @ 100 V 400 pF @ 100 V 538 pF @ 100 V 730 pF @ 100 V
FET Feature - - - - - - - - - -
Power Dissipation (Max) 55W (Tc) 52W (Tc) 190W (Tc) 52W (Tc) 52W (Tc) 57W (Tc) 90W (Tc) 48W (Tc) 52W (Tc) 52W (Tc)
Operating Temperature 150°C (TJ) 150°C (TJ) 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) 150°C (TJ) -55°C ~ 150°C (TJ) 150°C (TJ) -55°C ~ 150°C (TJ) 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package PowerFlat™ (5x6) HV PowerFlat™ (5x6) HV PowerFlat™ (8x8) HV PowerFlat™ (5x6) HV PowerFlat™ (5x6) HV PowerFlat™ (5x6) HV PowerFlat™ (8x8) HV PowerFlat™ (5x6) HV PowerFlat™ (5x6) HV PowerFlat™ (5x6) HV
Package / Case 8-PowerVDFN 8-PowerVDFN 8-PowerVDFN 8-PowerVDFN 8-PowerVDFN 8-PowerVDFN 8-PowerVDFN 8-PowerVDFN 8-PowerVDFN 8-PowerVDFN

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