STL18N60M2
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STMicroelectronics STL18N60M2

Manufacturer No:
STL18N60M2
Manufacturer:
STMicroelectronics
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 600V 9A POWERFLAT HV
Delivery:
Payment:
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Product Introduction

Overview

The STL18N60M2 is an N-channel power MOSFET from STMicroelectronics, part of the MDmesh II Plus series. This device is designed for high-efficiency applications and features a robust set of specifications that make it suitable for a variety of power management and conversion tasks. The STL18N60M2 is packaged in the PowerFLAT 5x6 HV package, which is optimized for surface mount technology on printed circuit boards.

Key Specifications

ParameterValue
Manufacturer Part NumberSTL18N60M2
ManufacturerSTMicroelectronics
DescriptionN-Channel 600V 9A MOSFET
Package / CasePowerFLAT™ (5x6) HV
Vds (Drain to Source Voltage)600V
Id (Continuous Drain Current) @ 25°C9A
Rds On (Max) @ Id, Vgs308 mOhm @ 4.5A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Vgs (Max)±25V
Power Dissipation (Max)57W (Tc)
Operating Temperature150°C (TJ)
Gate Charge (Qg) (Max) @ Vgs21.5nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds791pF @ 100V
Moisture Sensitivity Level (MSL)1 (Unlimited)
Lead Free Status / RoHS StatusLead free / RoHS Compliant

Key Features

  • N-Channel MOSFET technology for efficient power management.
  • High voltage capacity with a drain to source voltage (Vds) of up to 600V.
  • Continuous drain current (Id) of up to 9A at 25°C.
  • Low on-resistance (Rds On) of 308 mOhm at 4.5A and 10V for improved efficiency.
  • Gate charge of 21.5nC at 10V and input capacitance of 791pF at 100V.
  • Maximum operating temperature of 150°C (TJ).
  • Power dissipation of up to 57W (Tc).
  • Surface mount installation in PowerFLAT 5x6 HV package.
  • Lead-free and RoHS compliant, ensuring environmental compliance.
  • Moisture Sensitivity Level (MSL) 1, indicating high reliability and unlimited shelf life.

Applications

  • Power supply units (PSUs).
  • Energy management systems.
  • High-efficiency power converters.
  • Motor drives.

Q & A

  1. What is the maximum drain to source voltage (Vds) of the STL18N60M2?
    The maximum drain to source voltage (Vds) is 600V.
  2. What is the continuous drain current (Id) of the STL18N60M2 at 25°C?
    The continuous drain current (Id) is up to 9A at 25°C.
  3. What is the typical on-resistance (Rds On) of the STL18N60M2?
    The typical on-resistance (Rds On) is 308 mOhm at 4.5A and 10V.
  4. What is the maximum operating temperature of the STL18N60M2?
    The maximum operating temperature is 150°C (TJ).
  5. Is the STL18N60M2 lead-free and RoHS compliant?
    Yes, the STL18N60M2 is lead-free and RoHS compliant.
  6. What is the moisture sensitivity level (MSL) of the STL18N60M2?
    The moisture sensitivity level (MSL) is 1, indicating high reliability and unlimited shelf life.
  7. In what package is the STL18N60M2 available?
    The STL18N60M2 is available in the PowerFLAT 5x6 HV package.
  8. What are some typical applications of the STL18N60M2?
    Typical applications include power supply units, energy management systems, high-efficiency power converters, and motor drives.
  9. What is the gate charge (Qg) of the STL18N60M2 at 10V?
    The gate charge (Qg) is 21.5nC at 10V.
  10. What is the input capacitance (Ciss) of the STL18N60M2 at 100V?
    The input capacitance (Ciss) is 791pF at 100V.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):600 V
Current - Continuous Drain (Id) @ 25°C:9A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:308mOhm @ 4.5A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:21.5 nC @ 10 V
Vgs (Max):±25V
Input Capacitance (Ciss) (Max) @ Vds:791 pF @ 100 V
FET Feature:- 
Power Dissipation (Max):57W (Tc)
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PowerFlat™ (5x6) HV
Package / Case:8-PowerVDFN
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Part Number STL18N60M2 STL18N65M2 STL19N60M2 STL10N60M2 STL12N60M2 STL13N60M2 STL16N60M2
Manufacturer STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics
Product Status Active Active Active Obsolete Active Active Active
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V 650 V 600 V 600 V 600 V 600 V 600 V
Current - Continuous Drain (Id) @ 25°C 9A (Tc) 8A (Tc) 11A (Tc) 5.5A (Tc) 6.5A (Tc) 7A (Tc) 8A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V 10V 10V 10V
Rds On (Max) @ Id, Vgs 308mOhm @ 4.5A, 10V 365mOhm @ 4A, 10V - 660mOhm @ 2.5A, 10V 495mOhm @ 4.5A, 10V 420mOhm @ 4.5A, 10V 355mOhm @ 4A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA 4V @ 250µA 4V @ 250µA 4V @ 250µA 4V @ 250µA 4V @ 250µA 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 21.5 nC @ 10 V 21.5 nC @ 10 V 21.5 nC @ 10 V 13.5 nC @ 10 V 16 nC @ 10 V 17 nC @ 10 V 19 nC @ 10 V
Vgs (Max) ±25V ±25V ±25V ±25V ±25V ±25V ±25V
Input Capacitance (Ciss) (Max) @ Vds 791 pF @ 100 V 764 pF @ 100 V 791 pF @ 100 V 400 pF @ 100 V 538 pF @ 100 V 580 pF @ 100 V 704 pF @ 100 V
FET Feature - - - - - - -
Power Dissipation (Max) 57W (Tc) 57W (Tc) 90W (Tc) 48W (Tc) 52W (Tc) 55W (Tc) 52W (Tc)
Operating Temperature 150°C (TJ) 150°C (TJ) -55°C ~ 150°C (TJ) 150°C (TJ) -55°C ~ 150°C (TJ) 150°C (TJ) 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package PowerFlat™ (5x6) HV PowerFlat™ (5x6) HV PowerFlat™ (8x8) HV PowerFlat™ (5x6) HV PowerFlat™ (5x6) HV PowerFlat™ (5x6) HV PowerFlat™ (5x6) HV
Package / Case 8-PowerVDFN 8-PowerVDFN 8-PowerVDFN 8-PowerVDFN 8-PowerVDFN 8-PowerVDFN 8-PowerVDFN

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