STL12N60M2
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STMicroelectronics STL12N60M2

Manufacturer No:
STL12N60M2
Manufacturer:
STMicroelectronics
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 600V 6.5A POWERFLAT
Delivery:
Payment:
iso14001
iso45001
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Product Introduction

Overview

The STL12N60M2 is an N-channel Power MOSFET developed by STMicroelectronics using the advanced MDmesh™ M2 technology. This device is designed to offer low on-resistance and optimized switching characteristics, making it highly suitable for high-efficiency converters and demanding power applications.

Key Specifications

Parameter Value Unit
VDS (Drain-Source Voltage) 600 V
ID (Drain Current) 6.5 A
RDS(on) (On-Resistance) 0.400 Ω
VGS(th) (Threshold Voltage) 2-4 V
Qg (Gate Charge) Extremely low -
COSS (Output Capacitance) Excellent profile -
Package PowerFLAT 5x6 HV -
Operating Temperature -40 to 150 °C

Key Features

  • Extremely low gate charge
  • Excellent output capacitance (COSS) profile
  • 100% avalanche tested
  • Zener-protected

Applications

The STL12N60M2 is ideal for various high-efficiency power conversion applications, including:

  • Switch-Mode Power Supplies (SMPS)
  • Data centers
  • Solar microinverters
  • Other high-efficiency converters

Q & A

  1. What is the STL12N60M2?

    The STL12N60M2 is an N-channel Power MOSFET developed by STMicroelectronics using MDmesh™ M2 technology.

  2. What are the key specifications of the STL12N60M2?

    The device has a drain-source voltage (VDS) of 600 V, a drain current (ID) of 6.5 A, and an on-resistance (RDS(on)) of 0.400 Ω.

  3. What package is the STL12N60M2 available in?

    The STL12N60M2 is available in the PowerFLAT 5x6 HV package.

  4. What are the operating temperature ranges for the STL12N60M2?

    The operating temperature range is from -40°C to 150°C.

  5. What are the key features of the STL12N60M2?

    The key features include extremely low gate charge, an excellent output capacitance profile, 100% avalanche testing, and Zener protection.

  6. What applications is the STL12N60M2 suitable for?

    The device is suitable for high-efficiency power conversion applications such as SMPS, data centers, solar microinverters, and other high-efficiency converters.

  7. Is the STL12N60M2 RoHS compliant?
  8. Where can I find the datasheet and other resources for the STL12N60M2?

    You can find the datasheet and other resources on the STMicroelectronics official website or through authorized distributors.

  9. What is the significance of MDmesh™ M2 technology in the STL12N60M2?

    The MDmesh™ M2 technology enhances the device's performance by providing low on-resistance and optimized switching characteristics.

  10. Can I use the STL12N60M2 in automotive applications?

    While the STL12N60M2 is not specifically marked as automotive-grade, it is essential to check the specifications and ensure it meets the requirements for your specific application.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):600 V
Current - Continuous Drain (Id) @ 25°C:6.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:495mOhm @ 4.5A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:16 nC @ 10 V
Vgs (Max):±25V
Input Capacitance (Ciss) (Max) @ Vds:538 pF @ 100 V
FET Feature:- 
Power Dissipation (Max):52W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PowerFlat™ (5x6) HV
Package / Case:8-PowerVDFN
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Similar Products

Part Number STL12N60M2 STL16N60M2 STL12N65M2 STL13N60M2 STL12N60M6 STL18N60M2 STL19N60M2 STL10N60M2
Manufacturer STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics
Product Status Active Active Active Active Active Active Active Obsolete
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V 600 V 650 V 600 V 600 V 600 V 600 V 600 V
Current - Continuous Drain (Id) @ 25°C 6.5A (Tc) 8A (Tc) 5A (Tc) 7A (Tc) 6.4A (Tc) 9A (Tc) 11A (Tc) 5.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V 10V 10V 10V 10V
Rds On (Max) @ Id, Vgs 495mOhm @ 4.5A, 10V 355mOhm @ 4A, 10V 750mOhm @ 3A, 10V 420mOhm @ 4.5A, 10V 490mOhm @ 3.2A, 10V 308mOhm @ 4.5A, 10V - 660mOhm @ 2.5A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA 4V @ 250µA 4V @ 250µA 4V @ 250µA 4.75V @ 250µA 4V @ 250µA 4V @ 250µA 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 16 nC @ 10 V 19 nC @ 10 V 12.5 nC @ 10 V 17 nC @ 10 V - 21.5 nC @ 10 V 21.5 nC @ 10 V 13.5 nC @ 10 V
Vgs (Max) ±25V ±25V ±25V ±25V ±25V ±25V ±25V ±25V
Input Capacitance (Ciss) (Max) @ Vds 538 pF @ 100 V 704 pF @ 100 V 410 pF @ 100 V 580 pF @ 100 V - 791 pF @ 100 V 791 pF @ 100 V 400 pF @ 100 V
FET Feature - - - - - - - -
Power Dissipation (Max) 52W (Tc) 52W (Tc) 48W (Tc) 55W (Tc) 48W (Tc) 57W (Tc) 90W (Tc) 48W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) 150°C (TJ) -55°C ~ 150°C (TJ) 150°C (TJ) -55°C ~ 150°C (TJ) 150°C (TJ) -55°C ~ 150°C (TJ) 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package PowerFlat™ (5x6) HV PowerFlat™ (5x6) HV PowerFlat™ (5x6) HV PowerFlat™ (5x6) HV PowerFlat™ (5x6) HV PowerFlat™ (5x6) HV PowerFlat™ (8x8) HV PowerFlat™ (5x6) HV
Package / Case 8-PowerVDFN 8-PowerVDFN 8-PowerVDFN 8-PowerVDFN 8-PowerVDFN 8-PowerVDFN 8-PowerVDFN 8-PowerVDFN

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