STL19N60M2
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STMicroelectronics STL19N60M2

Manufacturer No:
STL19N60M2
Manufacturer:
STMicroelectronics
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 600V 11A PWRFLAT HV
Delivery:
Payment:
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Product Introduction

Overview

The STL19N60M2 is a high-voltage N-channel Power MOSFET developed by STMicroelectronics. This device is designed using the advanced MDmesh M2 technology, which features an innovative proprietary vertical structure. The MOSFET is known for its high voltage rating, low on-resistance, and improved switching performance, making it suitable for a variety of power management applications.

Key Specifications

ParameterValue
Transistor PolarityN Channel
Drain-Source Voltage (Vds)600 V
Continuous Drain Current (Id)11 A (Tc)
Power Dissipation (Pd)90 W (Tc)
Package TypeSurface Mount PowerFlat™ (8x8) HV
Junction Temperature (Tj)-55°C to 150°C

Key Features

  • High voltage rating of 600 V, making it suitable for high-power applications.
  • Low on-resistance (Rds(on)) for efficient power management.
  • Improved switching performance due to the MDmesh M2 technology.
  • Compact PowerFlat™ (8x8) HV package for space-saving designs.
  • Wide junction temperature range from -55°C to 150°C.

Applications

The STL19N60M2 is designed for use in various high-power applications, including:

  • Switch-Mode Power Supplies (SMPS).
  • Motor Control and Drives.
  • Power Factor Correction (PFC) circuits.
  • High-Voltage DC-DC Converters.
  • Industrial and Automotive Power Systems.

Q & A

  1. What is the voltage rating of the STL19N60M2 MOSFET?
    The STL19N60M2 has a drain-source voltage rating of 600 V.
  2. What is the maximum continuous drain current of the STL19N60M2?
    The maximum continuous drain current is 11 A (Tc).
  3. What technology is used in the STL19N60M2?
    The STL19N60M2 is developed using MDmesh M2 technology.
  4. What is the package type of the STL19N60M2?
    The package type is Surface Mount PowerFlat™ (8x8) HV.
  5. What are the typical applications of the STL19N60M2?
    Typical applications include SMPS, motor control, PFC circuits, high-voltage DC-DC converters, and industrial and automotive power systems.
  6. What is the junction temperature range of the STL19N60M2?
    The junction temperature range is from -55°C to 150°C.
  7. How does the MDmesh M2 technology benefit the STL19N60M2?
    The MDmesh M2 technology improves the switching performance and reduces on-resistance.
  8. Is the STL19N60M2 suitable for high-power applications?
    Yes, the STL19N60M2 is designed for high-power applications due to its high voltage and current ratings.
  9. What is the power dissipation of the STL19N60M2?
    The power dissipation is 90 W (Tc).
  10. Where can I find detailed specifications for the STL19N60M2?
    Detailed specifications can be found on the STMicroelectronics official website, as well as on distributor sites like Digi-Key and Mouser.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):600 V
Current - Continuous Drain (Id) @ 25°C:11A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:- 
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:21.5 nC @ 10 V
Vgs (Max):±25V
Input Capacitance (Ciss) (Max) @ Vds:791 pF @ 100 V
FET Feature:- 
Power Dissipation (Max):90W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PowerFlat™ (8x8) HV
Package / Case:8-PowerVDFN
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Similar Products

Part Number STL19N60M2 STL10N60M2 STL12N60M2 STL13N60M2 STL16N60M2 STL18N60M2 STL19N60DM2
Manufacturer STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics
Product Status Active Obsolete Active Active Active Active Obsolete
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V 600 V 600 V 600 V 600 V 600 V 600 V
Current - Continuous Drain (Id) @ 25°C 11A (Tc) 5.5A (Tc) 6.5A (Tc) 7A (Tc) 8A (Tc) 9A (Tc) 11A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V 10V 10V 10V
Rds On (Max) @ Id, Vgs - 660mOhm @ 2.5A, 10V 495mOhm @ 4.5A, 10V 420mOhm @ 4.5A, 10V 355mOhm @ 4A, 10V 308mOhm @ 4.5A, 10V 320mOhm @ 5.5A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA 4V @ 250µA 4V @ 250µA 4V @ 250µA 4V @ 250µA 4V @ 250µA 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 21.5 nC @ 10 V 13.5 nC @ 10 V 16 nC @ 10 V 17 nC @ 10 V 19 nC @ 10 V 21.5 nC @ 10 V 21 nC @ 10 V
Vgs (Max) ±25V ±25V ±25V ±25V ±25V ±25V ±25V
Input Capacitance (Ciss) (Max) @ Vds 791 pF @ 100 V 400 pF @ 100 V 538 pF @ 100 V 580 pF @ 100 V 704 pF @ 100 V 791 pF @ 100 V -
FET Feature - - - - - - -
Power Dissipation (Max) 90W (Tc) 48W (Tc) 52W (Tc) 55W (Tc) 52W (Tc) 57W (Tc) 90W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) 150°C (TJ) -55°C ~ 150°C (TJ) 150°C (TJ) 150°C (TJ) 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package PowerFlat™ (8x8) HV PowerFlat™ (5x6) HV PowerFlat™ (5x6) HV PowerFlat™ (5x6) HV PowerFlat™ (5x6) HV PowerFlat™ (5x6) HV PowerFlat™ (8x8) HV
Package / Case 8-PowerVDFN 8-PowerVDFN 8-PowerVDFN 8-PowerVDFN 8-PowerVDFN 8-PowerVDFN 8-PowerVDFN

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