0
My RFQ
STL13N65M2
  • Share:

STMicroelectronics STL13N65M2

Manufacturer No:
STL13N65M2
Manufacturer:
STMicroelectronics
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 650V 6.5A POWERFLAT
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The STL13N65M2 is an N-channel Power MOSFET developed by STMicroelectronics using the advanced MDmesh™ M2 technology. This device is designed for high voltage operation and features an improved vertical structure and strip layout, enhancing its performance and reliability. It is packaged in a Surface Mount PowerFlat™ (5x6) HV package, making it suitable for a variety of high-voltage applications.

Key Specifications

ParameterValue
VDS (Drain-Source Voltage)650 V
ID (Drain Current)6.5 A (Tc)
PD (Power Dissipation)52 W (Tc)
PackageSurface Mount PowerFlat™ (5x6) HV
TechnologyMDmesh™ M2

Key Features

  • High voltage operation up to 650 V
  • High isolation performance
  • Rugged and reliable design
  • Low electromagnetic interference
  • Emitting noise immunity

Applications

The STL13N65M2 is suitable for various high-voltage applications, including but not limited to:

  • Power supplies and converters
  • Motor control and drives
  • Industrial automation
  • Aerospace and defense systems
  • Automotive systems requiring high reliability and performance

Q & A

  1. What is the maximum drain-source voltage of the STL13N65M2?
    The maximum drain-source voltage is 650 V.
  2. What is the maximum drain current of the STL13N65M2?
    The maximum drain current is 6.5 A (Tc).
  3. What package type is used for the STL13N65M2?
    The STL13N65M2 is packaged in a Surface Mount PowerFlat™ (5x6) HV package.
  4. What technology is used in the STL13N65M2?
    The STL13N65M2 uses MDmesh™ M2 technology.
  5. Is the STL13N65M2 suitable for high-voltage applications?
    Yes, it is designed for high-voltage applications.
  6. What are some common applications of the STL13N65M2?
    Common applications include power supplies, motor control, industrial automation, aerospace, and automotive systems.
  7. Does the STL13N65M2 have high isolation performance?
    Yes, it features high isolation performance.
  8. Is the STL13N65M2 resistant to electromagnetic interference?
    Yes, it has low electromagnetic interference and emitting noise immunity.
  9. What is the power dissipation of the STL13N65M2?
    The power dissipation is 52 W (Tc).
  10. Where can I find detailed specifications for the STL13N65M2?
    Detailed specifications can be found on the official STMicroelectronics website, Digi-Key, and other authorized distributors.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):650 V
Current - Continuous Drain (Id) @ 25°C:6.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:475mOhm @ 3A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:17 nC @ 10 V
Vgs (Max):±25V
Input Capacitance (Ciss) (Max) @ Vds:590 pF @ 100 V
FET Feature:- 
Power Dissipation (Max):52W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PowerFlat™ (5x6) HV
Package / Case:8-PowerVDFN
0 Remaining View Similar

In Stock

$1.11
240

Please send RFQ , we will respond immediately.

Similar Products

Part Number STL13N65M2 STL33N65M2 STL3N65M2 STL16N65M2 STL18N65M2 STL10N65M2 STL11N65M2 STL12N65M2 STL13N60M2
Manufacturer STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics
Product Status Active Active Active Active Active Active Obsolete Active Active
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 650 V 650 V 650 V 650 V 650 V 650 V 650 V 650 V 600 V
Current - Continuous Drain (Id) @ 25°C 6.5A (Tc) 20A (Tc) 2.3A (Tc) 7.5A (Tc) 8A (Tc) 4.5A (Tc) 7A (Tc) 5A (Tc) 7A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V 10V 10V 10V 10V 10V
Rds On (Max) @ Id, Vgs 475mOhm @ 3A, 10V 154mOhm @ 10A, 10V 1.8Ohm @ 1A, 10V 395mOhm @ 3.5A, 10V 365mOhm @ 4A, 10V 1Ohm @ 2.5A, 10V 670mOhm @ 3.5A, 10V 750mOhm @ 3A, 10V 420mOhm @ 4.5A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA 4V @ 250µA 4V @ 250µA 4V @ 250µA 4V @ 250µA 4V @ 250µA 4V @ 250µA 4V @ 250µA 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 17 nC @ 10 V 41.5 nC @ 10 V 5 nC @ 10 V 19.5 nC @ 10 V 21.5 nC @ 10 V 10.3 nC @ 10 V 12.4 nC @ 10 V 12.5 nC @ 10 V 17 nC @ 10 V
Vgs (Max) ±25V ±25V ±25V ±25V ±25V ±25V ±25V ±25V ±25V
Input Capacitance (Ciss) (Max) @ Vds 590 pF @ 100 V 1790 pF @ 100 V 155 pF @ 100 V 718 pF @ 100 V 764 pF @ 100 V 315 pF @ 100 V 410 pF @ 100 V 410 pF @ 100 V 580 pF @ 100 V
FET Feature - - - - - - - - -
Power Dissipation (Max) 52W (Tc) 150W (Tc) 22W (Tc) 56W (Tc) 57W (Tc) 48W (Tc) 85W (Tc) 48W (Tc) 55W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TA) -55°C ~ 150°C (TJ) 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package PowerFlat™ (5x6) HV PowerFlat™ (8x8) HV PowerFlat™ (3.3x3.3) PowerFlat™ (5x6) HV PowerFlat™ (5x6) HV PowerFlat™ (5x6) HV - PowerFlat™ (5x6) HV PowerFlat™ (5x6) HV
Package / Case 8-PowerVDFN 8-PowerVDFN 8-PowerVDFN 8-PowerVDFN 8-PowerVDFN 8-PowerVDFN - 8-PowerVDFN 8-PowerVDFN

Related Product By Categories

STP19NF20
STP19NF20
STMicroelectronics
MOSFET N-CH 200V 15A TO220AB
STD5N52K3
STD5N52K3
STMicroelectronics
MOSFET N-CH 525V 4.4A DPAK
STB100N10F7
STB100N10F7
STMicroelectronics
MOSFET N-CH 100V 80A D2PAK
STL36N55M5
STL36N55M5
STMicroelectronics
MOSFET N-CH 550V 22.5A 4PWRFLAT
NTMFS4C028NT1G
NTMFS4C028NT1G
onsemi
MOSFET N-CH 30V 16.4A/52A 5DFN
NTMFS5H409NLT3G
NTMFS5H409NLT3G
onsemi
MOSFET N-CH 40V 41A/270A 5DFN
BUK762R6-60E,118
BUK762R6-60E,118
Nexperia USA Inc.
MOSFET N-CH 60V 120A D2PAK
STF38N65M5
STF38N65M5
STMicroelectronics
MOSFET N-CH 650V 30A TO220FP
STP18N60M2
STP18N60M2
STMicroelectronics
MOSFET N-CH 600V 13A TO220
STD85N3LH5
STD85N3LH5
STMicroelectronics
MOSFET N-CH 30V 80A DPAK
2SJ652-1E
2SJ652-1E
onsemi
MOSFET P-CH 60V 28A TO220F-3SG
FDMS86101E
FDMS86101E
onsemi
MOSFET N-CH 100V 12.4A/60A 8PQFN

Related Product By Brand

STPS3150UF
STPS3150UF
STMicroelectronics
DIODE SCHOTTKY 150V 3A SMBFLAT
ACST6-7SR
ACST6-7SR
STMicroelectronics
TRIAC SENS GATE 700V 6A I2PAK
STP6NK90ZFP
STP6NK90ZFP
STMicroelectronics
MOSFET N-CH 900V 5.8A TO220FP
STM32F078VBH6
STM32F078VBH6
STMicroelectronics
IC MCU 32BIT 128KB FLSH 100UFBGA
STM32F215ZET6TR
STM32F215ZET6TR
STMicroelectronics
IC MCU 32BIT 512KB FLASH 144LQFP
L9680
L9680
STMicroelectronics
IC INTERFACE SPECIALIZED 100TQFP
M95160-DRMN3TP/K
M95160-DRMN3TP/K
STMicroelectronics
IC EEPROM 16KBIT SPI 20MHZ 8SO
M27C4001-12F6
M27C4001-12F6
STMicroelectronics
IC EPROM 4MBIT PARALLEL 32CDIP
TDE1787ADP
TDE1787ADP
STMicroelectronics
IC PWR DRIVER BIPOLAR 1:1 8DIP
VNP35N07FI
VNP35N07FI
STMicroelectronics
IC PWR DRVR N-CH 1:1 ISOWATT220
VNS3NV04-E
VNS3NV04-E
STMicroelectronics
IC PWR DRIVER N-CHANNEL 1:1 8SO
L6599ATDTR
L6599ATDTR
STMicroelectronics
IC RESONANT CONVRTR CTRLR 16SOIC