English
STL13N65M2
  • Share:

STMicroelectronics STL13N65M2

Manufacturer No:
STL13N65M2
Manufacturer:
STMicroelectronics
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 650V 6.5A POWERFLAT
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The STL13N65M2 is an N-channel Power MOSFET developed by STMicroelectronics using the advanced MDmesh™ M2 technology. This device is designed for high voltage operation and features an improved vertical structure and strip layout, enhancing its performance and reliability. It is packaged in a Surface Mount PowerFlat™ (5x6) HV package, making it suitable for a variety of high-voltage applications.

Key Specifications

ParameterValue
VDS (Drain-Source Voltage)650 V
ID (Drain Current)6.5 A (Tc)
PD (Power Dissipation)52 W (Tc)
PackageSurface Mount PowerFlat™ (5x6) HV
TechnologyMDmesh™ M2

Key Features

  • High voltage operation up to 650 V
  • High isolation performance
  • Rugged and reliable design
  • Low electromagnetic interference
  • Emitting noise immunity

Applications

The STL13N65M2 is suitable for various high-voltage applications, including but not limited to:

  • Power supplies and converters
  • Motor control and drives
  • Industrial automation
  • Aerospace and defense systems
  • Automotive systems requiring high reliability and performance

Q & A

  1. What is the maximum drain-source voltage of the STL13N65M2?
    The maximum drain-source voltage is 650 V.
  2. What is the maximum drain current of the STL13N65M2?
    The maximum drain current is 6.5 A (Tc).
  3. What package type is used for the STL13N65M2?
    The STL13N65M2 is packaged in a Surface Mount PowerFlat™ (5x6) HV package.
  4. What technology is used in the STL13N65M2?
    The STL13N65M2 uses MDmesh™ M2 technology.
  5. Is the STL13N65M2 suitable for high-voltage applications?
    Yes, it is designed for high-voltage applications.
  6. What are some common applications of the STL13N65M2?
    Common applications include power supplies, motor control, industrial automation, aerospace, and automotive systems.
  7. Does the STL13N65M2 have high isolation performance?
    Yes, it features high isolation performance.
  8. Is the STL13N65M2 resistant to electromagnetic interference?
    Yes, it has low electromagnetic interference and emitting noise immunity.
  9. What is the power dissipation of the STL13N65M2?
    The power dissipation is 52 W (Tc).
  10. Where can I find detailed specifications for the STL13N65M2?
    Detailed specifications can be found on the official STMicroelectronics website, Digi-Key, and other authorized distributors.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):650 V
Current - Continuous Drain (Id) @ 25°C:6.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:475mOhm @ 3A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:17 nC @ 10 V
Vgs (Max):±25V
Input Capacitance (Ciss) (Max) @ Vds:590 pF @ 100 V
FET Feature:- 
Power Dissipation (Max):52W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PowerFlat™ (5x6) HV
Package / Case:8-PowerVDFN
0 Remaining View Similar

In Stock

$1.11
240

Please send RFQ , we will respond immediately.

Similar Products

Part Number STL13N65M2 STL33N65M2 STL3N65M2 STL16N65M2 STL18N65M2 STL10N65M2 STL11N65M2 STL12N65M2 STL13N60M2
Manufacturer STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics
Product Status Active Active Active Active Active Active Obsolete Active Active
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 650 V 650 V 650 V 650 V 650 V 650 V 650 V 650 V 600 V
Current - Continuous Drain (Id) @ 25°C 6.5A (Tc) 20A (Tc) 2.3A (Tc) 7.5A (Tc) 8A (Tc) 4.5A (Tc) 7A (Tc) 5A (Tc) 7A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V 10V 10V 10V 10V 10V
Rds On (Max) @ Id, Vgs 475mOhm @ 3A, 10V 154mOhm @ 10A, 10V 1.8Ohm @ 1A, 10V 395mOhm @ 3.5A, 10V 365mOhm @ 4A, 10V 1Ohm @ 2.5A, 10V 670mOhm @ 3.5A, 10V 750mOhm @ 3A, 10V 420mOhm @ 4.5A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA 4V @ 250µA 4V @ 250µA 4V @ 250µA 4V @ 250µA 4V @ 250µA 4V @ 250µA 4V @ 250µA 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 17 nC @ 10 V 41.5 nC @ 10 V 5 nC @ 10 V 19.5 nC @ 10 V 21.5 nC @ 10 V 10.3 nC @ 10 V 12.4 nC @ 10 V 12.5 nC @ 10 V 17 nC @ 10 V
Vgs (Max) ±25V ±25V ±25V ±25V ±25V ±25V ±25V ±25V ±25V
Input Capacitance (Ciss) (Max) @ Vds 590 pF @ 100 V 1790 pF @ 100 V 155 pF @ 100 V 718 pF @ 100 V 764 pF @ 100 V 315 pF @ 100 V 410 pF @ 100 V 410 pF @ 100 V 580 pF @ 100 V
FET Feature - - - - - - - - -
Power Dissipation (Max) 52W (Tc) 150W (Tc) 22W (Tc) 56W (Tc) 57W (Tc) 48W (Tc) 85W (Tc) 48W (Tc) 55W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TA) -55°C ~ 150°C (TJ) 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package PowerFlat™ (5x6) HV PowerFlat™ (8x8) HV PowerFlat™ (3.3x3.3) PowerFlat™ (5x6) HV PowerFlat™ (5x6) HV PowerFlat™ (5x6) HV - PowerFlat™ (5x6) HV PowerFlat™ (5x6) HV
Package / Case 8-PowerVDFN 8-PowerVDFN 8-PowerVDFN 8-PowerVDFN 8-PowerVDFN 8-PowerVDFN - 8-PowerVDFN 8-PowerVDFN

Related Product By Categories

NTLJF4156NT1G
NTLJF4156NT1G
onsemi
MOSFET N-CH 30V 2.5A 6WDFN
PHD71NQ03LT,118
PHD71NQ03LT,118
NXP USA Inc.
TRANSISTOR >30MHZ
PHT6NQ10T,135
PHT6NQ10T,135
Nexperia USA Inc.
MOSFET N-CH 100V 3A SOT223
FDD86567-F085
FDD86567-F085
onsemi
MOSFET N-CH 60V 100A DPAK
STP36NF06L
STP36NF06L
STMicroelectronics
MOSFET N-CH 60V 30A TO220AB
FDBL86361-F085
FDBL86361-F085
onsemi
MOSFET N-CH 80V 300A 8HPSOF
STW20N95K5
STW20N95K5
STMicroelectronics
MOSFET N-CH 950V 17.5A TO247-3
STF5N95K5
STF5N95K5
STMicroelectronics
MOSFET N-CH 950V 3.5A TO220FP
PHP9NQ20T,127
PHP9NQ20T,127
Nexperia USA Inc.
MOSFET N-CH 200V 8.7A TO220AB
2SJ652-1E
2SJ652-1E
onsemi
MOSFET P-CH 60V 28A TO220F-3SG
PMV65XP/MIR
PMV65XP/MIR
Nexperia USA Inc.
MOSFET P-CH 20V 2.8A TO236AB
NTNS3A65PZT5GHW
NTNS3A65PZT5GHW
onsemi
MOSFET P-CH 20V 281MA SOT883

Related Product By Brand

STPS1L60MF
STPS1L60MF
STMicroelectronics
DIODE SCHOTTKY 60V 1A DO222AA
BTA08-600CWRG
BTA08-600CWRG
STMicroelectronics
TRIAC ALTERNISTOR 600V TO220AB
BTA16-600SWRG
BTA16-600SWRG
STMicroelectronics
TRIAC SENS GATE 600V 16A TO220AB
Z0409MF 1AA2
Z0409MF 1AA2
STMicroelectronics
TRIAC SENS GATE 600V 4A TO202
STM32F205RBT6TR
STM32F205RBT6TR
STMicroelectronics
IC MCU 32BIT 128KB FLASH 64LQFP
STM32F215ZET6TR
STM32F215ZET6TR
STMicroelectronics
IC MCU 32BIT 512KB FLASH 144LQFP
ST232BD
ST232BD
STMicroelectronics
IC TRANSCEIVER FULL 2/2 16SO
TDA7360HS
TDA7360HS
STMicroelectronics
IC AMP AB MONO/STER 11MULTIWATT
TS921IDT
TS921IDT
STMicroelectronics
IC OPAMP GP 1 CIRCUIT 8SOIC
M27C2001-10F1
M27C2001-10F1
STMicroelectronics
IC EPROM 2MBIT PARALLEL 32CDIP
VNQ810PTR-E
VNQ810PTR-E
STMicroelectronics
IC PWR DRIVER N-CHANNEL 1:1 28SO
LNBH23LQTR
LNBH23LQTR
STMicroelectronics
IC REG CONV SAT TV 1OUT 32QFN