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STL13N65M2
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STMicroelectronics STL13N65M2

Manufacturer No:
STL13N65M2
Manufacturer:
STMicroelectronics
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 650V 6.5A POWERFLAT
Delivery:
Payment:
iso14001
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Product Introduction

Overview

The STL13N65M2 is an N-channel Power MOSFET developed by STMicroelectronics using the advanced MDmesh™ M2 technology. This device is designed for high voltage operation and features an improved vertical structure and strip layout, enhancing its performance and reliability. It is packaged in a Surface Mount PowerFlat™ (5x6) HV package, making it suitable for a variety of high-voltage applications.

Key Specifications

ParameterValue
VDS (Drain-Source Voltage)650 V
ID (Drain Current)6.5 A (Tc)
PD (Power Dissipation)52 W (Tc)
PackageSurface Mount PowerFlat™ (5x6) HV
TechnologyMDmesh™ M2

Key Features

  • High voltage operation up to 650 V
  • High isolation performance
  • Rugged and reliable design
  • Low electromagnetic interference
  • Emitting noise immunity

Applications

The STL13N65M2 is suitable for various high-voltage applications, including but not limited to:

  • Power supplies and converters
  • Motor control and drives
  • Industrial automation
  • Aerospace and defense systems
  • Automotive systems requiring high reliability and performance

Q & A

  1. What is the maximum drain-source voltage of the STL13N65M2?
    The maximum drain-source voltage is 650 V.
  2. What is the maximum drain current of the STL13N65M2?
    The maximum drain current is 6.5 A (Tc).
  3. What package type is used for the STL13N65M2?
    The STL13N65M2 is packaged in a Surface Mount PowerFlat™ (5x6) HV package.
  4. What technology is used in the STL13N65M2?
    The STL13N65M2 uses MDmesh™ M2 technology.
  5. Is the STL13N65M2 suitable for high-voltage applications?
    Yes, it is designed for high-voltage applications.
  6. What are some common applications of the STL13N65M2?
    Common applications include power supplies, motor control, industrial automation, aerospace, and automotive systems.
  7. Does the STL13N65M2 have high isolation performance?
    Yes, it features high isolation performance.
  8. Is the STL13N65M2 resistant to electromagnetic interference?
    Yes, it has low electromagnetic interference and emitting noise immunity.
  9. What is the power dissipation of the STL13N65M2?
    The power dissipation is 52 W (Tc).
  10. Where can I find detailed specifications for the STL13N65M2?
    Detailed specifications can be found on the official STMicroelectronics website, Digi-Key, and other authorized distributors.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):650 V
Current - Continuous Drain (Id) @ 25°C:6.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:475mOhm @ 3A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:17 nC @ 10 V
Vgs (Max):±25V
Input Capacitance (Ciss) (Max) @ Vds:590 pF @ 100 V
FET Feature:- 
Power Dissipation (Max):52W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PowerFlat™ (5x6) HV
Package / Case:8-PowerVDFN
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Part Number STL13N65M2 STL33N65M2 STL3N65M2 STL16N65M2 STL18N65M2 STL10N65M2 STL11N65M2 STL12N65M2 STL13N60M2
Manufacturer STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics
Product Status Active Active Active Active Active Active Obsolete Active Active
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 650 V 650 V 650 V 650 V 650 V 650 V 650 V 650 V 600 V
Current - Continuous Drain (Id) @ 25°C 6.5A (Tc) 20A (Tc) 2.3A (Tc) 7.5A (Tc) 8A (Tc) 4.5A (Tc) 7A (Tc) 5A (Tc) 7A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V 10V 10V 10V 10V 10V
Rds On (Max) @ Id, Vgs 475mOhm @ 3A, 10V 154mOhm @ 10A, 10V 1.8Ohm @ 1A, 10V 395mOhm @ 3.5A, 10V 365mOhm @ 4A, 10V 1Ohm @ 2.5A, 10V 670mOhm @ 3.5A, 10V 750mOhm @ 3A, 10V 420mOhm @ 4.5A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA 4V @ 250µA 4V @ 250µA 4V @ 250µA 4V @ 250µA 4V @ 250µA 4V @ 250µA 4V @ 250µA 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 17 nC @ 10 V 41.5 nC @ 10 V 5 nC @ 10 V 19.5 nC @ 10 V 21.5 nC @ 10 V 10.3 nC @ 10 V 12.4 nC @ 10 V 12.5 nC @ 10 V 17 nC @ 10 V
Vgs (Max) ±25V ±25V ±25V ±25V ±25V ±25V ±25V ±25V ±25V
Input Capacitance (Ciss) (Max) @ Vds 590 pF @ 100 V 1790 pF @ 100 V 155 pF @ 100 V 718 pF @ 100 V 764 pF @ 100 V 315 pF @ 100 V 410 pF @ 100 V 410 pF @ 100 V 580 pF @ 100 V
FET Feature - - - - - - - - -
Power Dissipation (Max) 52W (Tc) 150W (Tc) 22W (Tc) 56W (Tc) 57W (Tc) 48W (Tc) 85W (Tc) 48W (Tc) 55W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TA) -55°C ~ 150°C (TJ) 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package PowerFlat™ (5x6) HV PowerFlat™ (8x8) HV PowerFlat™ (3.3x3.3) PowerFlat™ (5x6) HV PowerFlat™ (5x6) HV PowerFlat™ (5x6) HV - PowerFlat™ (5x6) HV PowerFlat™ (5x6) HV
Package / Case 8-PowerVDFN 8-PowerVDFN 8-PowerVDFN 8-PowerVDFN 8-PowerVDFN 8-PowerVDFN - 8-PowerVDFN 8-PowerVDFN

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