STL3N65M2
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STMicroelectronics STL3N65M2

Manufacturer No:
STL3N65M2
Manufacturer:
STMicroelectronics
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 650V 2.3A POWERFLAT
Delivery:
Payment:
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iso45001
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Product Introduction

Overview

The STL3N65M2 is an N-channel Power MOSFET developed by STMicroelectronics using the advanced MDmesh M2 technology. This device is characterized by its strip layout and improved vertical structure, which enhance its electrical performance. It is packaged in a PowerFLAT-8HV (3.3x3.3 mm) surface mount package, making it suitable for a variety of high-power applications where space efficiency is crucial.

Key Specifications

ParameterValue
Voltage Rating (Vds)650 V
On-Resistance (Rds(on))1.6 Ω (typ.)
Continuous Drain Current (Id)2.3 A
Power Dissipation (Pd)22 W
Threshold Voltage (Vth)4 V @ 250 μA
Package TypePowerFLAT-8HV (3.3x3.3 mm)

Key Features

  • Low on-resistance (Rds(on)) of 1.6 Ω (typ.) for efficient power handling.
  • Optimized switching characteristics due to improved vertical structure and strip layout.
  • High voltage rating of 650 V, making it suitable for high-power applications.
  • Compact PowerFLAT-8HV (3.3x3.3 mm) package for space-efficient designs.
  • MDmesh M2 technology for enhanced performance and reliability.

Applications

The STL3N65M2 is designed for use in various high-power applications, including but not limited to:

  • Power supplies and DC-DC converters.
  • Motor control and drive systems.
  • Industrial automation and control systems.
  • Renewable energy systems, such as solar and wind power inverters.
  • Aerospace and defense applications requiring high reliability and performance.

Q & A

  1. What is the voltage rating of the STL3N65M2 MOSFET?
    The voltage rating of the STL3N65M2 MOSFET is 650 V.
  2. What is the typical on-resistance of the STL3N65M2?
    The typical on-resistance (Rds(on)) of the STL3N65M2 is 1.6 Ω.
  3. What is the maximum continuous drain current of the STL3N65M2?
    The maximum continuous drain current (Id) of the STL3N65M2 is 2.3 A.
  4. What package type is the STL3N65M2 available in?
    The STL3N65M2 is available in a PowerFLAT-8HV (3.3x3.3 mm) surface mount package.
  5. What technology is used in the STL3N65M2?
    The STL3N65M2 is developed using the MDmesh M2 technology.
  6. What are some common applications of the STL3N65M2?
    The STL3N65M2 is commonly used in power supplies, motor control systems, industrial automation, renewable energy systems, and aerospace applications.
  7. What is the power dissipation capability of the STL3N65M2?
    The power dissipation capability (Pd) of the STL3N65M2 is 22 W.
  8. What is the threshold voltage of the STL3N65M2?
    The threshold voltage (Vth) of the STL3N65M2 is 4 V @ 250 μA.
  9. Is the STL3N65M2 RoHS compliant?
    Yes, the STL3N65M2 is RoHS compliant.
  10. Where can I find detailed specifications for the STL3N65M2?
    Detailed specifications for the STL3N65M2 can be found on the STMicroelectronics official website, as well as on distributor websites such as Mouser, Digi-Key, and LCSC.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):650 V
Current - Continuous Drain (Id) @ 25°C:2.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:1.8Ohm @ 1A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:5 nC @ 10 V
Vgs (Max):±25V
Input Capacitance (Ciss) (Max) @ Vds:155 pF @ 100 V
FET Feature:- 
Power Dissipation (Max):22W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PowerFlat™ (3.3x3.3)
Package / Case:8-PowerVDFN
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Similar Products

Part Number STL3N65M2 STL9N65M2 STL8N65M2 STL13N65M2 STL33N65M2
Manufacturer STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics
Product Status Active Obsolete Active Active Active
FET Type N-Channel - N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) - MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 650 V - 650 V 650 V 650 V
Current - Continuous Drain (Id) @ 25°C 2.3A (Tc) 4.5A (Tc) 4A (Tc) 6.5A (Tc) 20A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V - 10V 10V 10V
Rds On (Max) @ Id, Vgs 1.8Ohm @ 1A, 10V - - 475mOhm @ 3A, 10V 154mOhm @ 10A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA - - 4V @ 250µA 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 5 nC @ 10 V - - 17 nC @ 10 V 41.5 nC @ 10 V
Vgs (Max) ±25V - ±25V ±25V ±25V
Input Capacitance (Ciss) (Max) @ Vds 155 pF @ 100 V - - 590 pF @ 100 V 1790 pF @ 100 V
FET Feature - - - - -
Power Dissipation (Max) 22W (Tc) - - 52W (Tc) 150W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) - -55°C ~ 150°C (TA) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package PowerFlat™ (3.3x3.3) - - PowerFlat™ (5x6) HV PowerFlat™ (8x8) HV
Package / Case 8-PowerVDFN - - 8-PowerVDFN 8-PowerVDFN

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