STL8N65M2
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STMicroelectronics STL8N65M2

Manufacturer No:
STL8N65M2
Manufacturer:
STMicroelectronics
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 650V 5A PWRFLAT56 HV
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The STL8N65M2 is a high-performance N-channel Power MOSFET from STMicroelectronics, part of the MDmesh M2 series. This device is designed to offer excellent electrical characteristics and robustness, making it suitable for a variety of high-power applications. The STL8N65M2 features a voltage rating of 650 V and a typical on-resistance of 1 Ohm, with a current rating of 4 A. It is packaged in the PowerFLAT 5x6 HV package, which provides a compact and efficient solution for power management.

Key Specifications

ParameterValue
Voltage Rating (Vds)650 V
Typical On-Resistance (Rds(on))1 Ohm
Current Rating (Id)4 A
PackagePowerFLAT 5x6 HV

Key Features

  • High voltage rating of 650 V, making it suitable for high-power applications.
  • Low typical on-resistance of 1 Ohm, reducing power losses and improving efficiency.
  • Compact PowerFLAT 5x6 HV package for space-saving designs.
  • High current rating of 4 A, supporting a wide range of power requirements.
  • MDmesh M2 technology for enhanced performance and reliability.

Applications

  • Power supplies and DC-DC converters.
  • Motor control and drive systems.
  • Industrial automation and control systems.
  • Aerospace and defense applications requiring high reliability.
  • Renewable energy systems, such as solar and wind power.

Q & A

  1. What is the voltage rating of the STL8N65M2?
    The voltage rating of the STL8N65M2 is 650 V.
  2. What is the typical on-resistance of the STL8N65M2?
    The typical on-resistance of the STL8N65M2 is 1 Ohm.
  3. What is the current rating of the STL8N65M2?
    The current rating of the STL8N65M2 is 4 A.
  4. In what package is the STL8N65M2 available?
    The STL8N65M2 is available in the PowerFLAT 5x6 HV package.
  5. What technology is used in the STL8N65M2?
    The STL8N65M2 uses MDmesh M2 technology.
  6. What are some typical applications for the STL8N65M2?
    The STL8N65M2 is typically used in power supplies, motor control systems, industrial automation, aerospace, and renewable energy systems.
  7. Is the STL8N65M2 suitable for high-power applications?
    Yes, the STL8N65M2 is designed for high-power applications due to its high voltage and current ratings.
  8. What are the benefits of using the PowerFLAT 5x6 HV package?
    The PowerFLAT 5x6 HV package offers a compact and efficient solution, reducing space requirements and improving thermal performance.
  9. How does the MDmesh M2 technology enhance the performance of the STL8N65M2?
    The MDmesh M2 technology enhances the performance by providing low on-resistance, high current capability, and improved reliability.
  10. Where can I find detailed specifications and datasheets for the STL8N65M2?
    Detailed specifications and datasheets can be found on the STMicroelectronics official website or through authorized distributors like Digi-Key, Mouser, and Arrow Electronics.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):650 V
Current - Continuous Drain (Id) @ 25°C:4A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:- 
Vgs(th) (Max) @ Id:- 
Gate Charge (Qg) (Max) @ Vgs:- 
Vgs (Max):±25V
Input Capacitance (Ciss) (Max) @ Vds:- 
FET Feature:- 
Power Dissipation (Max):- 
Operating Temperature:-55°C ~ 150°C (TA)
Mounting Type:Surface Mount
Supplier Device Package:- 
Package / Case:- 
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Similar Products

Part Number STL8N65M2 STL9N65M2 STL8N65M5 STL3N65M2
Manufacturer STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics
Product Status Active Obsolete Obsolete Active
FET Type N-Channel - N-Channel N-Channel
Technology MOSFET (Metal Oxide) - MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 650 V - 650 V 650 V
Current - Continuous Drain (Id) @ 25°C 4A (Tc) 4.5A (Tc) 1.4A (Ta), 7A (Tc) 2.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V - 10V 10V
Rds On (Max) @ Id, Vgs - - 600mOhm @ 3.5A, 10V 1.8Ohm @ 1A, 10V
Vgs(th) (Max) @ Id - - 5V @ 250µA 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs - - 15 nC @ 10 V 5 nC @ 10 V
Vgs (Max) ±25V - ±25V ±25V
Input Capacitance (Ciss) (Max) @ Vds - - 690 pF @ 100 V 155 pF @ 100 V
FET Feature - - - -
Power Dissipation (Max) - - 2.5W (Ta), 70W (Tc) 22W (Tc)
Operating Temperature -55°C ~ 150°C (TA) - 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package - - PowerFLAT™ (5x5) PowerFlat™ (3.3x3.3)
Package / Case - - 14-PowerVQFN 8-PowerVDFN

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