NDTL03N150CG
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onsemi NDTL03N150CG

Manufacturer No:
NDTL03N150CG
Manufacturer:
onsemi
Package:
Bulk
Description:
MOSFET N-CH 1500V 2.5A TO3P
Delivery:
Payment:
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Product Introduction

Overview

The NDTL03N150CG is a high-performance N-Channel Power MOSFET produced by onsemi. This device is designed for high-voltage applications, offering a drain-to-source breakdown voltage (VDSS) of 1500V and a continuous drain current (ID) of 2.5A. The MOSFET features a low on-resistance (RDS(on)) of 10.5Ω at VGS = 10V and ID = 1.25A, making it suitable for high-speed switching applications. It is also Pb-Free and RoHS compliant, ensuring environmental sustainability.

Key Specifications

Parameter Symbol Value Unit
Drain to Source Breakdown Voltage VDSS 1500 V
Gate to Source Voltage VGSS ±30 V
Continuous Drain Current ID 2.5 A
Pulse Drain Current (PW ≤ 10μs, duty cycle ≤ 1%) IDP 5 A
Power Dissipation at Tc = 25°C PD 2.5 W
Junction Temperature Tj 150 °C
Storage Temperature Tstg −55 to +150 °C
Static Drain to Source On-State Resistance RDS(on) 10.5 Ω
Gate Threshold Voltage VGS(th) 2 to 4 V

Key Features

  • Low On-Resistance: 10.5Ω at VGS = 10V and ID = 1.25A, ensuring efficient high-speed switching.
  • Ultra High Voltage: 1500V drain-to-source breakdown voltage, suitable for high-voltage applications.
  • High Speed Switching: Fast switching times with turn-on delay time of 15 ns and turn-off delay time of 140 ns.
  • 100% Avalanche Tested: Ensures robustness against avalanche conditions.
  • Pb-Free and RoHS Compliance: Environmentally friendly and compliant with regulatory standards.

Applications

  • Switch Mode Power Supply: Ideal for high-efficiency power conversion in switch mode power supplies.
  • AC Drive: Suitable for use in AC drive systems due to its high voltage and current handling capabilities.

Q & A

  1. What is the maximum drain-to-source breakdown voltage of the NDTL03N150CG?

    The maximum drain-to-source breakdown voltage (VDSS) is 1500V.

  2. What is the continuous drain current rating of this MOSFET?

    The continuous drain current (ID) is 2.5A.

  3. What is the typical on-resistance of the NDTL03N150CG?

    The typical on-resistance (RDS(on)) is 10.5Ω at VGS = 10V and ID = 1.25A.

  4. Is the NDTL03N150CG Pb-Free and RoHS compliant?
  5. What are the typical applications of the NDTL03N150CG?

    Typical applications include switch mode power supplies and AC drive systems.

  6. What is the junction temperature rating of this MOSFET?

    The junction temperature (Tj) rating is 150°C.

  7. What is the storage temperature range for the NDTL03N150CG?

    The storage temperature range is −55 to +150°C.

  8. What is the gate threshold voltage of the NDTL03N150CG?

    The gate threshold voltage (VGS(th)) is between 2 to 4V.

  9. How fast is the switching time of this MOSFET?

    The turn-on delay time is 15 ns, and the turn-off delay time is 140 ns.

  10. Is the NDTL03N150CG 100% avalanche tested?

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):1500 V
Current - Continuous Drain (Id) @ 25°C:2.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:10.5Ohm @ 1.25A, 10V
Vgs(th) (Max) @ Id:- 
Gate Charge (Qg) (Max) @ Vgs:34 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:650 pF @ 30 V
FET Feature:- 
Power Dissipation (Max):2.5W (Ta), 140W (Tc)
Operating Temperature:150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-3P(L)
Package / Case:TO-3PL
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Similar Products

Part Number NDTL03N150CG NDUL03N150CG
Manufacturer onsemi onsemi
Product Status Obsolete Obsolete
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 1500 V 1500 V
Current - Continuous Drain (Id) @ 25°C 2.5A (Ta) 2.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 10.5Ohm @ 1.25A, 10V 10.5Ohm @ 1.25A, 10V
Vgs(th) (Max) @ Id - -
Gate Charge (Qg) (Max) @ Vgs 34 nC @ 10 V 34 nC @ 10 V
Vgs (Max) ±30V ±30V
Input Capacitance (Ciss) (Max) @ Vds 650 pF @ 30 V 650 pF @ 30 V
FET Feature - -
Power Dissipation (Max) 2.5W (Ta), 140W (Tc) 3W (Ta), 50W (Tc)
Operating Temperature 150°C (TJ) 150°C (TJ)
Mounting Type Through Hole Through Hole
Supplier Device Package TO-3P(L) TO-3P(L)
Package / Case TO-3PL TO-3PL

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