NDUL09N150CG
  • Share:

onsemi NDUL09N150CG

Manufacturer No:
NDUL09N150CG
Manufacturer:
onsemi
Package:
Bulk
Description:
MOSFET N-CH 1500V 9A TO3PF-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The NDUL09N150CG is a single N-channel power MOSFET manufactured by ON Semiconductor. This device is designed for high-power applications, offering robust performance and reliability. However, it is important to note that this product has been discontinued by ON Semiconductor as part of their portfolio renewal process.

Key Specifications

ParameterSymbolValueUnit
Number of Channels-1 Channel-
Drain-Source Breakdown Voltage (Vds)Vdss1500 VV
Continuous Drain Current (Id)Id9 AA
Drain-Source On-Resistance (Rds On)Rds On-Ω

Key Features

  • High drain-source breakdown voltage of 1500 V, making it suitable for high-voltage applications.
  • Continuous drain current of 9 A, ensuring robust current handling capabilities.
  • Single N-channel configuration for simplicity and ease of use in various power circuits.
  • Designed for high reliability and performance in demanding environments.

Applications

  • Power supplies and DC-DC converters.
  • Motor control and drive systems.
  • High-voltage industrial and automotive applications.
  • Switching and power management circuits.

Q & A

  1. What is the drain-source breakdown voltage of the NDUL09N150CG MOSFET? The drain-source breakdown voltage (Vdss) is 1500 V.
  2. What is the continuous drain current rating of the NDUL09N150CG? The continuous drain current (Id) is 9 A.
  3. Is the NDUL09N150CG still in production? No, the NDUL09N150CG has been discontinued by ON Semiconductor.
  4. What are some typical applications for the NDUL09N150CG MOSFET? Typical applications include power supplies, DC-DC converters, motor control systems, and high-voltage industrial and automotive applications.
  5. What is the configuration of the NDUL09N150CG MOSFET? It is a single N-channel MOSFET.
  6. Where can I find replacement parts for the NDUL09N150CG? ON Semiconductor may have suggested replacement devices listed in their product discontinuance notices.
  7. What are the key features of the NDUL09N150CG? Key features include high drain-source breakdown voltage, high continuous drain current, and a single N-channel configuration.
  8. How do I handle the discontinuance of the NDUL09N150CG in my product design? You should plan for replacement devices and consult ON Semiconductor's product discontinuance notices for guidance on alternative parts.
  9. Can I still purchase the NDUL09N150CG? While the product is discontinued, remaining inventory might be available through authorized distributors or partners like Rochester Electronics until the stock is depleted.
  10. What are the implications of the NDUL09N150CG being non-cancelable and non-returnable (NCNR)? This means that once ordered, the purchase cannot be canceled, and the products cannot be returned.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):1500 V
Current - Continuous Drain (Id) @ 25°C:9A (Ta)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:3Ohm @ 3A, 10V
Vgs(th) (Max) @ Id:4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:114 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:2025 pF @ 30 V
FET Feature:- 
Power Dissipation (Max):3W (Ta), 78W (Tc)
Operating Temperature:150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-3PF-3
Package / Case:TO-3P-3 Full Pack
0 Remaining View Similar

In Stock

-
211

Please send RFQ , we will respond immediately.

Similar Products

Part Number NDUL09N150CG NDUL03N150CG
Manufacturer onsemi onsemi
Product Status Obsolete Obsolete
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 1500 V 1500 V
Current - Continuous Drain (Id) @ 25°C 9A (Ta) 2.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 3Ohm @ 3A, 10V 10.5Ohm @ 1.25A, 10V
Vgs(th) (Max) @ Id 4V @ 1mA -
Gate Charge (Qg) (Max) @ Vgs 114 nC @ 10 V 34 nC @ 10 V
Vgs (Max) ±30V ±30V
Input Capacitance (Ciss) (Max) @ Vds 2025 pF @ 30 V 650 pF @ 30 V
FET Feature - -
Power Dissipation (Max) 3W (Ta), 78W (Tc) 3W (Ta), 50W (Tc)
Operating Temperature 150°C (TJ) 150°C (TJ)
Mounting Type Through Hole Through Hole
Supplier Device Package TO-3PF-3 TO-3P(L)
Package / Case TO-3P-3 Full Pack TO-3PL

Related Product By Categories

STP13NK60Z
STP13NK60Z
STMicroelectronics
MOSFET N-CH 600V 13A TO220AB
FDMC2523P
FDMC2523P
onsemi
MOSFET P-CH 150V 3A 8MLP
CSD19536KTTT
CSD19536KTTT
Texas Instruments
MOSFET N-CH 100V 200A DDPAK
NTMFS5C460NLT1G
NTMFS5C460NLT1G
onsemi
MOSFET N-CH 40V 5DFN
BUK9M24-40EX
BUK9M24-40EX
Nexperia USA Inc.
MOSFET N-CH 40V 30A LFPAK33
STD4NK60ZT4
STD4NK60ZT4
STMicroelectronics
MOSFET N-CH 600V 4A DPAK
BUK7Y2R0-40HX
BUK7Y2R0-40HX
Nexperia USA Inc.
MOSFET N-CH 40V 120A LFPAK56
FCPF1300N80Z
FCPF1300N80Z
onsemi
MOSFET N-CH 800V 4A TO220F
STB30N65M5
STB30N65M5
STMicroelectronics
MOSFET N-CH 650V 22A D2PAK
NTMFS4C55NT1G
NTMFS4C55NT1G
onsemi
MOSFET N-CH 30V 78A SO8FL
2SJ652-1E
2SJ652-1E
onsemi
MOSFET P-CH 60V 28A TO220F-3SG
BSS138W-7-F-79
BSS138W-7-F-79
Diodes Incorporated
DIODE

Related Product By Brand

MMBD7000LT1G
MMBD7000LT1G
onsemi
DIODE ARRAY GP 100V 200MA SOT23
MMSZ11T1G
MMSZ11T1G
onsemi
DIODE ZENER 11V 500MW SOD123
NJW21193G
NJW21193G
onsemi
TRANS PNP 250V 16A TO3P-3L
NSS60600MZ4T3G
NSS60600MZ4T3G
onsemi
TRANS PNP 60V 6A SOT223
NLHV4052DTR2G
NLHV4052DTR2G
onsemi
IC MULTIPLEXER DP4T 16TSSOP
MC33074APG
MC33074APG
onsemi
IC OPAMP JFET 4 CIRCUIT 14DIP
NCP1252ADR2G
NCP1252ADR2G
onsemi
IC OFFLINE SWITCH MULT TOP 8SOIC
NCV7720DQR2G
NCV7720DQR2G
onsemi
IC MOTOR DRVR 3.15V-5.25V 24SSOP
TLV431ALPG
TLV431ALPG
onsemi
IC VREF SHUNT ADJ 1% TO92-3
NCV4274ADS50R4G
NCV4274ADS50R4G
onsemi
IC REG LINEAR 5V 400MA D2PAK
NCV4269AD150R2G
NCV4269AD150R2G
onsemi
IC REG LINEAR 5V 150MA 8SOIC
NCV4276CDS50R4G
NCV4276CDS50R4G
onsemi
IC REG LINEAR 5V 400MA D2PAK-5