NDUL09N150CG
  • Share:

onsemi NDUL09N150CG

Manufacturer No:
NDUL09N150CG
Manufacturer:
onsemi
Package:
Bulk
Description:
MOSFET N-CH 1500V 9A TO3PF-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The NDUL09N150CG is a single N-channel power MOSFET manufactured by ON Semiconductor. This device is designed for high-power applications, offering robust performance and reliability. However, it is important to note that this product has been discontinued by ON Semiconductor as part of their portfolio renewal process.

Key Specifications

ParameterSymbolValueUnit
Number of Channels-1 Channel-
Drain-Source Breakdown Voltage (Vds)Vdss1500 VV
Continuous Drain Current (Id)Id9 AA
Drain-Source On-Resistance (Rds On)Rds On-Ω

Key Features

  • High drain-source breakdown voltage of 1500 V, making it suitable for high-voltage applications.
  • Continuous drain current of 9 A, ensuring robust current handling capabilities.
  • Single N-channel configuration for simplicity and ease of use in various power circuits.
  • Designed for high reliability and performance in demanding environments.

Applications

  • Power supplies and DC-DC converters.
  • Motor control and drive systems.
  • High-voltage industrial and automotive applications.
  • Switching and power management circuits.

Q & A

  1. What is the drain-source breakdown voltage of the NDUL09N150CG MOSFET? The drain-source breakdown voltage (Vdss) is 1500 V.
  2. What is the continuous drain current rating of the NDUL09N150CG? The continuous drain current (Id) is 9 A.
  3. Is the NDUL09N150CG still in production? No, the NDUL09N150CG has been discontinued by ON Semiconductor.
  4. What are some typical applications for the NDUL09N150CG MOSFET? Typical applications include power supplies, DC-DC converters, motor control systems, and high-voltage industrial and automotive applications.
  5. What is the configuration of the NDUL09N150CG MOSFET? It is a single N-channel MOSFET.
  6. Where can I find replacement parts for the NDUL09N150CG? ON Semiconductor may have suggested replacement devices listed in their product discontinuance notices.
  7. What are the key features of the NDUL09N150CG? Key features include high drain-source breakdown voltage, high continuous drain current, and a single N-channel configuration.
  8. How do I handle the discontinuance of the NDUL09N150CG in my product design? You should plan for replacement devices and consult ON Semiconductor's product discontinuance notices for guidance on alternative parts.
  9. Can I still purchase the NDUL09N150CG? While the product is discontinued, remaining inventory might be available through authorized distributors or partners like Rochester Electronics until the stock is depleted.
  10. What are the implications of the NDUL09N150CG being non-cancelable and non-returnable (NCNR)? This means that once ordered, the purchase cannot be canceled, and the products cannot be returned.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):1500 V
Current - Continuous Drain (Id) @ 25°C:9A (Ta)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:3Ohm @ 3A, 10V
Vgs(th) (Max) @ Id:4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:114 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:2025 pF @ 30 V
FET Feature:- 
Power Dissipation (Max):3W (Ta), 78W (Tc)
Operating Temperature:150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-3PF-3
Package / Case:TO-3P-3 Full Pack
0 Remaining View Similar

In Stock

-
211

Please send RFQ , we will respond immediately.

Similar Products

Part Number NDUL09N150CG NDUL03N150CG
Manufacturer onsemi onsemi
Product Status Obsolete Obsolete
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 1500 V 1500 V
Current - Continuous Drain (Id) @ 25°C 9A (Ta) 2.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 3Ohm @ 3A, 10V 10.5Ohm @ 1.25A, 10V
Vgs(th) (Max) @ Id 4V @ 1mA -
Gate Charge (Qg) (Max) @ Vgs 114 nC @ 10 V 34 nC @ 10 V
Vgs (Max) ±30V ±30V
Input Capacitance (Ciss) (Max) @ Vds 2025 pF @ 30 V 650 pF @ 30 V
FET Feature - -
Power Dissipation (Max) 3W (Ta), 78W (Tc) 3W (Ta), 50W (Tc)
Operating Temperature 150°C (TJ) 150°C (TJ)
Mounting Type Through Hole Through Hole
Supplier Device Package TO-3PF-3 TO-3P(L)
Package / Case TO-3P-3 Full Pack TO-3PL

Related Product By Categories

IRF4905PBF
IRF4905PBF
Infineon Technologies
MOSFET P-CH 55V 74A TO220AB
NTHD3101FT1G
NTHD3101FT1G
onsemi
MOSFET P-CH 20V 3.2A CHIPFET
PSMN4R0-30YLDX
PSMN4R0-30YLDX
Nexperia USA Inc.
MOSFET N-CH 30V 95A LFPAK56
FDBL0150N80
FDBL0150N80
onsemi
MOSFET N-CH 80V 300A 8HPSOF
BUK9M85-60EX
BUK9M85-60EX
Nexperia USA Inc.
MOSFET N-CH 60V 12.8A LFPAK33
STP22NM60N
STP22NM60N
STMicroelectronics
MOSFET N-CH 600V 16A TO220AB
BUK9635-55A,118
BUK9635-55A,118
Nexperia USA Inc.
MOSFET N-CH 55V 34A D2PAK
FDMA6676PZ
FDMA6676PZ
onsemi
MOSFET P-CH 30V 11A 6MICROFET
NTD20N06LT4
NTD20N06LT4
onsemi
MOSFET N-CH 60V 20A DPAK
2N7002TC
2N7002TC
Diodes Incorporated
MOSFET N-CH 60V 115MA SOT23-3
FDMC8010ET30
FDMC8010ET30
onsemi
MOSFET N-CH 30V 30A/174A POWER33
FDB075N15A_SN00284
FDB075N15A_SN00284
onsemi
MOSFET N-CH 150V 130A D2PAK

Related Product By Brand

BAV70-ON
BAV70-ON
onsemi
RECTIFIER DIODE, 2 ELEMENT, 0.2A
MURF860G
MURF860G
onsemi
DIODE GEN PURP 600V 8A TO220FP
NJVMJD31T4G
NJVMJD31T4G
onsemi
TRANS NPN 40V 3A DPAK
BC81740MTF
BC81740MTF
onsemi
TRANS NPN 45V 0.8A SOT23-3
2N7002KW
2N7002KW
onsemi
MOSFET N-CH 60V 310MA SC70
CD4081BCN
CD4081BCN
onsemi
IC GATE AND 4CH 2-INP 14DIP
NCS29001DR2G
NCS29001DR2G
onsemi
IC LED DRIVER CTRLR PWM 14SOIC
NCP380LSN05AAT1G
NCP380LSN05AAT1G
onsemi
IC PWR SWITCH P-CHAN 1:1 5TSOP
NCP302045MNTWG
NCP302045MNTWG
onsemi
IC PWR DRIVER P-CHAN 2:1 31PQFN
LM2931CTG
LM2931CTG
onsemi
IC REG LIN POS ADJ 100MA TO220-5
LM317MDTG
LM317MDTG
onsemi
IC REG LINEAR POS ADJ 500MA DPAK
NCP584HSN33T1G
NCP584HSN33T1G
onsemi
IC REG LINEAR 3.3V 200MA SOT23-5