STD9N60M2
  • Share:

STMicroelectronics STD9N60M2

Manufacturer No:
STD9N60M2
Manufacturer:
STMicroelectronics
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 600V 5.5A DPAK
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The STD9N60M2 is an N-channel Power MOSFET developed by STMicroelectronics using the advanced MDmesh™ M2 technology. This device is designed to offer low on-resistance and optimized switching characteristics, making it highly suitable for high-efficiency converters and demanding power applications.

Key Specifications

ParameterValue
VDS (Drain-Source Voltage)600 V
ID (Drain Current)5.5 A
RDS(on) (On-Resistance)0.72 Ω (typ.) at VGS = 10 V, ID = 3 A
PackageDPAK
Operating Temperature Range-55°C to 150°C
RoHS ComplianceEcopack2
ECCN (US)EAR99

Key Features

  • Extremely low gate charge
  • Excellent output capacitance (COSS) profile
  • 100% avalanche tested
  • Zener-protected

Applications

The STD9N60M2 is particularly suited for industrial applications, including high-efficiency converters, switch-mode power supplies (SMPS), data centers, and solar microinverters.

Q & A

  1. What is the typical on-resistance of the STD9N60M2?
    The typical on-resistance is 0.72 Ω at VGS = 10 V, ID = 3 A.
  2. What is the maximum drain current of the STD9N60M2?
    The maximum drain current is 5.5 A.
  3. What is the package type of the STD9N60M2?
    The package type is DPAK.
  4. Is the STD9N60M2 RoHS compliant?
    Yes, it is RoHS compliant with an Ecopack2 rating.
  5. What are the key features of the STD9N60M2?
    The key features include extremely low gate charge, excellent output capacitance profile, 100% avalanche tested, and Zener-protected.
  6. What are the typical applications of the STD9N60M2?
    The typical applications include high-efficiency converters, SMPS, data centers, and solar microinverters.
  7. What is the operating temperature range of the STD9N60M2?
    The operating temperature range is -55°C to 150°C.
  8. What is the ECCN (US) classification of the STD9N60M2?
    The ECCN (US) classification is EAR99.
  9. Where can I find the datasheet and other resources for the STD9N60M2?
    You can find the datasheet and other resources on the STMicroelectronics website or through authorized distributors.
  10. Is the STD9N60M2 available for immediate shipping?
    Yes, it is available for immediate shipping from various distributors.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):600 V
Current - Continuous Drain (Id) @ 25°C:5.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:780mOhm @ 3A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:10 nC @ 10 V
Vgs (Max):±25V
Input Capacitance (Ciss) (Max) @ Vds:320 pF @ 100 V
FET Feature:- 
Power Dissipation (Max):60W (Tc)
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:DPAK
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
0 Remaining View Similar

In Stock

$0.73
1,287

Please send RFQ , we will respond immediately.

Same Series
STP9N60M2
STP9N60M2
MOSFET N-CH 600V 5.5A TO220
STU9N60M2
STU9N60M2
MOSFET N-CH 600V 5.5A IPAK

Similar Products

Part Number STD9N60M2 STD9N65M2 STD6N60M2 STD7N60M2 STD9N40M2
Manufacturer STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics
Product Status Active Active Active Active Active
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V 650 V 600 V 600 V 400 V
Current - Continuous Drain (Id) @ 25°C 5.5A (Tc) 5A (Tc) 4.5A (Tc) 5A (Tc) 6A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V 10V
Rds On (Max) @ Id, Vgs 780mOhm @ 3A, 10V 900mOhm @ 2.5A, 10V 1.2Ohm @ 2.25A, 10V 950mOhm @ 2.5A, 10V 800mOhm @ 3A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA 4V @ 250µA 4V @ 250µA 4V @ 250µA 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 10 nC @ 10 V 10 nC @ 10 V 8 nC @ 10 V 8.8 nC @ 10 V 8.8 nC @ 10 V
Vgs (Max) ±25V ±25V ±25V ±25V ±25V
Input Capacitance (Ciss) (Max) @ Vds 320 pF @ 100 V 315 pF @ 100 V 232 pF @ 100 V 271 pF @ 100 V 270 pF @ 100 V
FET Feature - - - - -
Power Dissipation (Max) 60W (Tc) 60W (Tc) 60W (Tc) 60W (Tc) 60W (Tc)
Operating Temperature 150°C (TJ) 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package DPAK DPAK DPAK DPAK DPAK
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63

Related Product By Categories

STD2HNK60Z
STD2HNK60Z
STMicroelectronics
MOSFET N-CH 600V 2A DPAK
NTMFS5C460NLT1G
NTMFS5C460NLT1G
onsemi
MOSFET N-CH 40V 5DFN
STF13N80K5
STF13N80K5
STMicroelectronics
MOSFET N-CH 800V 12A TO220FP
STB33N60M2
STB33N60M2
STMicroelectronics
MOSFET N-CH 600V 26A D2PAK
NTMFS4C028NT1G
NTMFS4C028NT1G
onsemi
MOSFET N-CH 30V 16.4A/52A 5DFN
NVMFS6H852NLT1G
NVMFS6H852NLT1G
onsemi
MOSFET N-CH 80V 11A/42A 5DFN
PMPB15XP
PMPB15XP
Nexperia USA Inc.
PMPB15XP - 12 V, SINGLE P-CHANNE
MTD6N15T4
MTD6N15T4
onsemi
MOSFET N-CH 150V 6A DPAK
2N7002TC
2N7002TC
Diodes Incorporated
MOSFET N-CH 60V 115MA SOT23-3
FQD13N10LTM_NBEL001
FQD13N10LTM_NBEL001
onsemi
MOSFET N-CH 100V 10A DPAK
2SJ652-1E
2SJ652-1E
onsemi
MOSFET P-CH 60V 28A TO220F-3SG
NTNS3A65PZT5GHW
NTNS3A65PZT5GHW
onsemi
MOSFET P-CH 20V 281MA SOT883

Related Product By Brand

STTH1002CG
STTH1002CG
STMicroelectronics
DIODE ARRAY GP 200V 8A D2PAK
STPS3150UF
STPS3150UF
STMicroelectronics
DIODE SCHOTTKY 150V 3A SMBFLAT
ACST1235-8FP
ACST1235-8FP
STMicroelectronics
TRIAC 800V 12A TO-220FPAB
STL76DN4LF7AG
STL76DN4LF7AG
STMicroelectronics
MOSFET 2N-CH 40V 40A PWRFLAT
STP6NK90ZFP
STP6NK90ZFP
STMicroelectronics
MOSFET N-CH 900V 5.8A TO220FP
SPC58EC80E5EMC0X
SPC58EC80E5EMC0X
STMicroelectronics
IC MCU 32BIT 4MB FLASH 144ETQFP
M68AW512ML70ND6
M68AW512ML70ND6
STMicroelectronics
IC SRAM 8MBIT PARALLEL 44TSOP II
L9959S-TR-D
L9959S-TR-D
STMicroelectronics
IC H-BRIDGE HIGH SIDE 24PSSOP
VNS3NV04D-E
VNS3NV04D-E
STMicroelectronics
IC PWR DRIVER N-CHANNEL 1:1 8SO
VN5E025AJ-E
VN5E025AJ-E
STMicroelectronics
IC PWR SWTCH N-CHAN 1:1 PWRSSO12
L78L06ACZ-AP
L78L06ACZ-AP
STMicroelectronics
IC REG LINEAR 6V 100MA TO92-3
AIS326DQ
AIS326DQ
STMicroelectronics
ACCEL 2-6G I2C/SPI 28QFPN