BSS123NH6433XTMA1
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Infineon Technologies BSS123NH6433XTMA1

Manufacturer No:
BSS123NH6433XTMA1
Manufacturer:
Infineon Technologies
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 100V 190MA SOT23-3
Delivery:
Payment:
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Product Introduction

Overview

The BSS123NH6433XTMA1 is a small-signal N-channel enhancement mode MOSFET produced by Infineon Technologies. This component is part of the OptiMOS™ family, known for its high performance and reliability. It is designed for logic level applications and is qualified according to AEC Q101, making it suitable for automotive and other demanding environments. The MOSFET is packaged in a PG-SOT23 surface mount package, ensuring a compact footprint and ease of integration into various electronic systems.

Key Specifications

ParameterSymbolConditionsUnitValue
Continuous Drain CurrentIDTA=25°CA0.19
Pulsed Drain CurrentID,pulseTA=25°CA0.77
Drain-Source Breakdown VoltageV(BR)DSSVGS=0V, ID=250µAV100
Gate Threshold VoltageVGS(th)VDS=VGS, ID=13µAV0.8 - 1.8
Drain-Source On-State ResistanceRDS(on)VGS=4.5V, ID=0.15AΩ2.7 - 10
Gate Source VoltageVGSV±20
Operating TemperatureTj, Tstg°C-55 to 150
Package TypePG-SOT23

Key Features

  • N-channel enhancement mode MOSFET
  • Logic level (4.5V rated)
  • Avalanche rated
  • Qualified according to AEC Q101
  • 100% lead-free, RoHS compliant, and halogen-free
  • Compact PG-SOT23 surface mount package
  • High performance and reliability

Applications

The BSS123NH6433XTMA1 is suitable for a variety of applications, including:

  • Automotive systems due to its AEC Q101 qualification
  • Industrial control systems
  • Consumer electronics requiring high reliability and performance
  • Power management and switching circuits
  • General-purpose logic level switching

Q & A

  1. What is the continuous drain current of the BSS123NH6433XTMA1 at 25°C? The continuous drain current is 0.19 A at 25°C.
  2. What is the maximum drain-source breakdown voltage? The maximum drain-source breakdown voltage is 100 V.
  3. What is the gate threshold voltage range? The gate threshold voltage range is from 0.8 V to 1.8 V.
  4. Is the BSS123NH6433XTMA1 RoHS compliant? Yes, the BSS123NH6433XTMA1 is 100% lead-free, RoHS compliant, and halogen-free.
  5. What is the operating temperature range of the BSS123NH6433XTMA1? The operating temperature range is from -55°C to 150°C.
  6. What package type is used for the BSS123NH6433XTMA1? The BSS123NH6433XTMA1 is packaged in a PG-SOT23 surface mount package.
  7. What are some typical applications for the BSS123NH6433XTMA1? Typical applications include automotive systems, industrial control systems, consumer electronics, power management, and general-purpose logic level switching.
  8. Is the BSS123NH6433XTMA1 qualified for automotive use? Yes, it is qualified according to AEC Q101.
  9. What is the maximum gate source voltage? The maximum gate source voltage is ±20 V.
  10. What is the maximum power dissipation at 25°C? The maximum power dissipation at 25°C is 500 mW.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:190mA (Ta)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:6Ohm @ 190mA, 10V
Vgs(th) (Max) @ Id:1.8V @ 13µA
Gate Charge (Qg) (Max) @ Vgs:0.9 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:20.9 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):500mW (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-SOT23
Package / Case:TO-236-3, SC-59, SOT-23-3
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Same Series
BSS123NH6433XTMA1
BSS123NH6433XTMA1
MOSFET N-CH 100V 190MA SOT23-3

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