BSS123NH6433XTMA1
  • Share:

Infineon Technologies BSS123NH6433XTMA1

Manufacturer No:
BSS123NH6433XTMA1
Manufacturer:
Infineon Technologies
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 100V 190MA SOT23-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BSS123NH6433XTMA1 is a small-signal N-channel enhancement mode MOSFET produced by Infineon Technologies. This component is part of the OptiMOS™ family, known for its high performance and reliability. It is designed for logic level applications and is qualified according to AEC Q101, making it suitable for automotive and other demanding environments. The MOSFET is packaged in a PG-SOT23 surface mount package, ensuring a compact footprint and ease of integration into various electronic systems.

Key Specifications

ParameterSymbolConditionsUnitValue
Continuous Drain CurrentIDTA=25°CA0.19
Pulsed Drain CurrentID,pulseTA=25°CA0.77
Drain-Source Breakdown VoltageV(BR)DSSVGS=0V, ID=250µAV100
Gate Threshold VoltageVGS(th)VDS=VGS, ID=13µAV0.8 - 1.8
Drain-Source On-State ResistanceRDS(on)VGS=4.5V, ID=0.15AΩ2.7 - 10
Gate Source VoltageVGSV±20
Operating TemperatureTj, Tstg°C-55 to 150
Package TypePG-SOT23

Key Features

  • N-channel enhancement mode MOSFET
  • Logic level (4.5V rated)
  • Avalanche rated
  • Qualified according to AEC Q101
  • 100% lead-free, RoHS compliant, and halogen-free
  • Compact PG-SOT23 surface mount package
  • High performance and reliability

Applications

The BSS123NH6433XTMA1 is suitable for a variety of applications, including:

  • Automotive systems due to its AEC Q101 qualification
  • Industrial control systems
  • Consumer electronics requiring high reliability and performance
  • Power management and switching circuits
  • General-purpose logic level switching

Q & A

  1. What is the continuous drain current of the BSS123NH6433XTMA1 at 25°C? The continuous drain current is 0.19 A at 25°C.
  2. What is the maximum drain-source breakdown voltage? The maximum drain-source breakdown voltage is 100 V.
  3. What is the gate threshold voltage range? The gate threshold voltage range is from 0.8 V to 1.8 V.
  4. Is the BSS123NH6433XTMA1 RoHS compliant? Yes, the BSS123NH6433XTMA1 is 100% lead-free, RoHS compliant, and halogen-free.
  5. What is the operating temperature range of the BSS123NH6433XTMA1? The operating temperature range is from -55°C to 150°C.
  6. What package type is used for the BSS123NH6433XTMA1? The BSS123NH6433XTMA1 is packaged in a PG-SOT23 surface mount package.
  7. What are some typical applications for the BSS123NH6433XTMA1? Typical applications include automotive systems, industrial control systems, consumer electronics, power management, and general-purpose logic level switching.
  8. Is the BSS123NH6433XTMA1 qualified for automotive use? Yes, it is qualified according to AEC Q101.
  9. What is the maximum gate source voltage? The maximum gate source voltage is ±20 V.
  10. What is the maximum power dissipation at 25°C? The maximum power dissipation at 25°C is 500 mW.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:190mA (Ta)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:6Ohm @ 190mA, 10V
Vgs(th) (Max) @ Id:1.8V @ 13µA
Gate Charge (Qg) (Max) @ Vgs:0.9 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:20.9 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):500mW (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-SOT23
Package / Case:TO-236-3, SC-59, SOT-23-3
0 Remaining View Similar

In Stock

$0.49
289

Please send RFQ , we will respond immediately.

Same Series
BSS123NH6433XTMA1
BSS123NH6433XTMA1
MOSFET N-CH 100V 190MA SOT23-3

Related Product By Categories

STP13NK60Z
STP13NK60Z
STMicroelectronics
MOSFET N-CH 600V 13A TO220AB
STL50NH3LL
STL50NH3LL
STMicroelectronics
MOSFET N-CH 30V 27A POWERFLAT
FDB38N30U
FDB38N30U
onsemi
MOSFET N CH 300V 38A D2PAK
CSD17575Q3
CSD17575Q3
Texas Instruments
MOSFET N-CH 30V 60A 8VSON
BSC093N15NS5ATMA1
BSC093N15NS5ATMA1
Infineon Technologies
MOSFET N-CH 150V 87A TDSON
NTD2955T4G
NTD2955T4G
onsemi
MOSFET P-CH 60V 12A DPAK
STD9N40M2
STD9N40M2
STMicroelectronics
MOSFET N-CH 400V 6A DPAK
STF3NK100Z
STF3NK100Z
STMicroelectronics
MOSFET N-CH 1000V 2.5A TO220FP
NTMFS5C612NLT1G
NTMFS5C612NLT1G
onsemi
MOSFET N-CH 60V 36A/235A 5DFN
FDN336P-NL
FDN336P-NL
onsemi
MOSFET P-CH 20V 1.3A SUPERSOT3
BSS84PW
BSS84PW
Infineon Technologies
MOSFET P-CH 60V 150MA SOT323-3
NVMFS6B25NLT1G
NVMFS6B25NLT1G
onsemi
MOSFET N-CH 100V 8A/33A 5DFN

Related Product By Brand

BAS 16U E6327
BAS 16U E6327
Infineon Technologies
RECTIFIER DIODE
BAS4007WH6327
BAS4007WH6327
Infineon Technologies
SCHOTTKY DIODE
BAS4007WH6327XTSA1
BAS4007WH6327XTSA1
Infineon Technologies
DIODE ARRAY SCHOTTKY 40V SOT343
BAS40B5003
BAS40B5003
Infineon Technologies
RECTIFIER DIODE, SCHOTTKY
BAT54WE6327
BAT54WE6327
Infineon Technologies
RECTIFIER DIODE, SCHOTTKY
BAS1602WH6327XTSA1
BAS1602WH6327XTSA1
Infineon Technologies
DIODE GEN PURP 80V 200MA SCD80-2
BC 856B E6433
BC 856B E6433
Infineon Technologies
TRANS PNP 65V 0.1A SOT23
BC857CWE6433HTMA1
BC857CWE6433HTMA1
Infineon Technologies
TRANS PNP 45V 0.1A SOT323
IRF7410TRPBF
IRF7410TRPBF
Infineon Technologies
MOSFET P-CH 12V 16A 8SO
SPP20N60C3HKSA1
SPP20N60C3HKSA1
Infineon Technologies
MOSFET N-CH 600V 20.7A TO220-3
TLE6250G ITJKK
TLE6250G ITJKK
Infineon Technologies
IC TRANSCEIVER FULL 1/1 DSO-8
CY7C68013A-56PVXC
CY7C68013A-56PVXC
Infineon Technologies
IC MCU USB PERIPH HI SPD 56SSOP