MMBT3906LT1G
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onsemi MMBT3906LT1G

Manufacturer No:
MMBT3906LT1G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
TRANS PNP 40V 0.2A SOT23-3
Delivery:
Payment:
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Product Introduction

Overview

The MMBT3906LT1G is a PNP Silicon General Purpose Transistor manufactured by onsemi. This transistor is designed for use in both linear and switching applications. It is housed in the SOT-23 (SC-59, TO-236) package, which is suitable for lower power surface mount applications. The device is AEC-Q101 qualified and PPAP capable, making it suitable for automotive and other applications requiring stringent quality standards.

Key Specifications

Attribute Value Unit
Polarity PNP
Collector-Emitter Voltage (VCEO) -40 VDC
Collector-Base Voltage (VCB0) -40 VDC
Emitter-Base Voltage (VEB0) -5.0 VDC
Collector Current (IC) - Continuous -200 mADC
Collector Current (IC) - Peak -800 mADC
Power Dissipation (PD) - Total 225 mW
Junction and Storage Temperature -65 to +150 °C
Package Style SOT-23 (SC-59, TO-236)
Mounting Method Surface Mount
Current Gain Bandwidth Product (fT) 250 MHz
DC Current Gain (hFE) 30 minimum

Key Features

  • Pb-free packages are available, making the device RoHS compliant and halogen-free/BFR-free.
  • AEC-Q101 qualified and PPAP capable, suitable for automotive and other applications requiring unique site and control change requirements.
  • S prefix for automotive and other applications with specific requirements.
  • Low power surface mount SOT-23 package.
  • High collector-emitter voltage and current ratings.
  • High current gain bandwidth product.

Applications

The MMBT3906LT1G is versatile and can be used in a variety of applications, including:

  • Linear amplifiers and switching circuits.
  • Automotive systems due to its AEC-Q101 qualification.
  • General purpose electronic circuits requiring a reliable PNP transistor.
  • Surface mount designs where space is limited.

Q & A

  1. What is the polarity of the MMBT3906LT1G transistor?

    The MMBT3906LT1G is a PNP transistor.

  2. What is the maximum collector-emitter voltage of the MMBT3906LT1G?

    The maximum collector-emitter voltage (VCEO) is -40 VDC.

  3. What is the continuous collector current rating of the MMBT3906LT1G?

    The continuous collector current (IC) is -200 mA DC.

  4. What is the total power dissipation of the MMBT3906LT1G?

    The total power dissipation (PD) is 225 mW.

  5. What is the junction and storage temperature range of the MMBT3906LT1G?

    The junction and storage temperature range is -65 to +150°C.

  6. What package style is the MMBT3906LT1G available in?

    The MMBT3906LT1G is available in the SOT-23 (SC-59, TO-236) package.

  7. Is the MMBT3906LT1G RoHS compliant?
  8. What is the current gain bandwidth product of the MMBT3906LT1G?

    The current gain bandwidth product (fT) is 250 MHz.

  9. Is the MMBT3906LT1G suitable for automotive applications?
  10. What is the minimum DC current gain (hFE) of the MMBT3906LT1G?

    The minimum DC current gain (hFE) is 30.

Product Attributes

Transistor Type:PNP
Current - Collector (Ic) (Max):200 mA
Voltage - Collector Emitter Breakdown (Max):40 V
Vce Saturation (Max) @ Ib, Ic:400mV @ 5mA, 50mA
Current - Collector Cutoff (Max):- 
DC Current Gain (hFE) (Min) @ Ic, Vce:100 @ 10mA, 1V
Power - Max:300 mW
Frequency - Transition:250MHz
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:TO-236-3, SC-59, SOT-23-3
Supplier Device Package:SOT-23-3 (TO-236)
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Same Series
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SMMBT3906LT1G
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Similar Products

Part Number MMBT3906LT1G MMBT3906TT1G MMBT3906LT3G MMBT3906WT1G MMBT3904LT1G MMBT3906LT1
Manufacturer onsemi onsemi onsemi onsemi onsemi Infineon Technologies
Product Status Active Active Active Active Active Obsolete
Transistor Type PNP PNP PNP PNP NPN PNP
Current - Collector (Ic) (Max) 200 mA 200 mA 200 mA 200 mA 200 mA 200 mA
Voltage - Collector Emitter Breakdown (Max) 40 V 40 V 40 V 40 V 40 V 40 V
Vce Saturation (Max) @ Ib, Ic 400mV @ 5mA, 50mA 400mV @ 5mA, 50mA 400mV @ 5mA, 50mA 400mV @ 5mA, 50mA 300mV @ 5mA, 50mA 400mV @ 5mA, 50mA
Current - Collector Cutoff (Max) - - - - - -
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 10mA, 1V 100 @ 10mA, 1V 100 @ 10mA, 1V 100 @ 10mA, 1V 100 @ 10mA, 1V 100 @ 10mA, 1V
Power - Max 300 mW 200 mW 300 mW 150 mW 300 mW 225 mW
Frequency - Transition 250MHz 250MHz 250MHz 250MHz 300MHz 250MHz
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3 SC-75, SOT-416 TO-236-3, SC-59, SOT-23-3 SC-70, SOT-323 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3
Supplier Device Package SOT-23-3 (TO-236) SC-75, SOT-416 SOT-23-3 (TO-236) SC-70-3 (SOT323) SOT-23-3 (TO-236) SOT-23-3 (TO-236)

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