Overview
The MMBT3906TT1G is a general-purpose PNP bipolar transistor manufactured by onsemi. It is designed for low power surface mount applications and is housed in the SOT-416/SC-75 package. This transistor is suitable for a wide range of amplifier applications due to its robust electrical characteristics and compact packaging. It is Pb-free, halogen-free, and RoHS compliant, making it an environmentally friendly choice for various electronic designs.
Key Specifications
| Characteristic | Symbol | Min | Max | Unit |
|---|---|---|---|---|
| Collector-Emitter Voltage | VCEO | - | -40 | Vdc |
| Collector-Base Voltage | VCBO | - | -40 | Vdc |
| Emitter-Base Voltage | VEBO | - | -5.0 | Vdc |
| Collector Current - Continuous | IC | - | 200 | mAdc |
| DC Current Gain (hFE) @ IC = 10 mA, VCE = 1 V | hFE | 100 | - | - |
| Frequency - Transition | fT | - | 250 | MHz |
| Operating Temperature (TJ) | TJ | -55 | 150 | °C |
| Thermal Resistance, Junction-to-Ambient | RθJA | - | 600 | °C/W |
| Total Device Dissipation (FR-4 Board @ TA = 25°C) | PD | - | 200 | mW |
Key Features
- Pb-free, halogen-free, and RoHS compliant, ensuring environmental sustainability.
- NSVM prefix for automotive and other applications requiring unique site and control change requirements.
- Compact SOT-416/SC-75 package suitable for low power surface mount applications.
- High DC current gain (hFE) of up to 100 at IC = 10 mA and VCE = 1 V.
- Transition frequency of 250 MHz, making it suitable for high-frequency applications.
- Wide operating temperature range from -55°C to 150°C.
Applications
- General-purpose amplifier applications.
- Automotive electronics due to its compliance with unique site and control change requirements.
- Low power surface mount designs in various electronic devices.
- High-frequency applications such as audio amplifiers and switching circuits.
Q & A
- What is the maximum collector-emitter voltage for the MMBT3906TT1G transistor?
The maximum collector-emitter voltage (VCEO) is -40 Vdc.
- What is the DC current gain (hFE) of the MMBT3906TT1G transistor?
The DC current gain (hFE) is up to 100 at IC = 10 mA and VCE = 1 V.
- What is the transition frequency (fT) of the MMBT3906TT1G transistor?
The transition frequency (fT) is 250 MHz.
- What is the operating temperature range for the MMBT3906TT1G transistor?
The operating temperature range is from -55°C to 150°C.
- Is the MMBT3906TT1G transistor RoHS compliant?
- What package type is the MMBT3906TT1G transistor housed in?
The transistor is housed in the SOT-416/SC-75 package).
- What are the typical applications for the MMBT3906TT1G transistor?
Typical applications include general-purpose amplifier applications, automotive electronics, and high-frequency applications such as audio amplifiers and switching circuits).
- What is the thermal resistance, junction-to-ambient (RθJA) for the MMBT3906TT1G transistor?
The thermal resistance, junction-to-ambient (RθJA) is up to 600 °C/W).
- What is the maximum collector current for the MMBT3906TT1G transistor?
The maximum collector current (IC) is 200 mA).
- Is the MMBT3906TT1G transistor suitable for high-frequency applications?
