Overview
The NSVMMBT3906TT1G is a PNP general-purpose transistor manufactured by onsemi. It is designed for low power surface mount applications and is housed in the SOT-416/SC-75 package. This transistor is suitable for various general-purpose amplifier and switching applications. It is Pb-free, halogen-free, and RoHS compliant, making it environmentally friendly and compliant with current regulations.
Key Specifications
| Parameter | Symbol | Value | Unit |
|---|---|---|---|
| Collector-Emitter Voltage | VCEO | -40 | Vdc |
| Collector-Base Voltage | VCBO | -40 | Vdc |
| Emitter-Base Voltage | VEBO | -5.0 | Vdc |
| Collector Current - Continuous | IC | -200 | mAdc |
| Max Power Dissipation | PTOT | 330 | mW |
| Thermal Resistance, Junction to Ambient | RθJA | 375 | °C/W |
| Operating Junction Temperature and Storage Temperature Range | TJ, Tstg | -55 to +150 | °C |
| DC Current Gain (hFE) | hFE | 60 - 300 | - |
| Collector-Emitter Saturation Voltage (VCE(sat)) | VCE(sat) | -0.25 to -0.4 | V |
| Delay Time (td) | td | -35 | ns |
| Rise Time (tr) | tr | -35 | ns |
| Storage Time (ts) | ts | -225 | ns |
| Fall Time (tf) | tf | -75 | ns |
Key Features
- PNP epitaxial silicon, planar design
- Collector-emitter voltage VCEO = -40V
- Collector current IC = -200mA
- Lead-free and RoHS compliant
- Green molding compound as per IEC 61249 standard
- Suitable for general-purpose amplifier and switching applications
- Pb-free, halogen-free, and BFR-free package
- NSVM prefix for automotive and other applications requiring unique site and control change requirements
Applications
- General-purpose amplifier applications
- Switching applications
- Automotive electronics
- Consumer electronics
- Industrial control systems
- Audio and small-signal applications
Q & A
- What is the collector-emitter voltage rating of the NSVMMBT3906TT1G transistor?
The collector-emitter voltage rating is -40 Vdc.
- What is the maximum continuous collector current for the NSVMMBT3906TT1G?
The maximum continuous collector current is -200 mA.
- Is the NSVMMBT3906TT1G RoHS compliant?
- What is the thermal resistance, junction to ambient, for the NSVMMBT3906TT1G?
The thermal resistance, junction to ambient, is 375 °C/W.
- What is the operating junction temperature range for the NSVMMBT3906TT1G?
The operating junction temperature range is -55 to +150 °C.
- What is the typical DC current gain (hFE) for the NSVMMBT3906TT1G?
The typical DC current gain (hFE) ranges from 60 to 300.
- What are the typical delay and rise times for the NSVMMBT3906TT1G?
The typical delay and rise times are both -35 ns.
- What is the storage time for the NSVMMBT3906TT1G?
The storage time is -225 ns.
- What is the fall time for the NSVMMBT3906TT1G?
The fall time is -75 ns.
- In what package is the NSVMMBT3906TT1G housed?
The NSVMMBT3906TT1G is housed in the SOT-416/SC-75 package.
