MMBT3904TT1G
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onsemi MMBT3904TT1G

Manufacturer No:
MMBT3904TT1G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
TRANS NPN 40V 0.2A SC75 SOT416
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The MMBT3904TT1G is a 200 mA, 40 V NPN Bipolar Junction Transistor (BJT) designed for general purpose amplifier applications. It is housed in the SOT-416/SC-75 package, which is optimized for low power surface mount applications. This transistor is suitable for a wide range of electronic circuits due to its robust specifications and compliance with various industry standards. It is Pb-Free, Halogen Free/BFR Free, and RoHS Compliant, making it an environmentally friendly choice. Additionally, the 'S' prefix indicates that it meets automotive and other unique site and control change requirements, and it is AEC-Q101 Qualified and PPAP Capable.

Key Specifications

Characteristic Symbol Value Unit
Collector-Emitter Voltage VCEO 40 Vdc
Collector-Base Voltage VCBO 60 Vdc
Emitter-Base Voltage VEBO 6.0 Vdc
Collector Current - Continuous IC 200 mAdc
Junction and Storage Temperature Range TJ, Tstg -65 to +150 °C
Small-Signal Current Gain hfe 100 - 400 -
Output Admittance hoe 1.0 - 40 μmhos
Noise Figure NF -5.0 dB
Delay Time td -35 ns
Rise Time tr -35 ns
Storage Time ts -200 ns
Fall Time tf -35 ns

Key Features

  • Pb-Free, Halogen Free/BFR Free, and RoHS Compliant: Ensures environmental sustainability and compliance with regulatory standards.
  • AEC-Q101 Qualified and PPAP Capable: Suitable for automotive and other applications requiring unique site and control change requirements.
  • Small Footprint Package (SOT-416/SC-75): Ideal for low power surface mount applications.
  • High Collector-Emitter Voltage (VCEO): 40 Vdc, making it versatile for various amplifier circuits.
  • High Collector Current (IC): 200 mAdc, suitable for a range of current handling needs.
  • Wide Operating Temperature Range: Junction and storage temperature range from -65°C to +150°C.

Applications

The MMBT3904TT1G is designed for general purpose amplifier applications and can be used in a variety of electronic circuits, including:

  • Audio amplifiers
  • Switching circuits
  • Automotive electronics
  • Industrial control systems
  • Consumer electronics

Q & A

  1. What is the collector-emitter voltage rating of the MMBT3904TT1G?

    40 Vdc.

  2. What is the maximum collector current of the MMBT3904TT1G?

    200 mAdc.

  3. Is the MMBT3904TT1G RoHS compliant?
  4. What package type is the MMBT3904TT1G housed in?

    SOT-416/SC-75.

  5. What are the junction and storage temperature ranges for the MMBT3904TT1G?

    -65°C to +150°C.

  6. Is the MMBT3904TT1G suitable for automotive applications?
  7. What is the small-signal current gain range of the MMBT3904TT1G?

    100 to 400.

  8. What is the noise figure of the MMBT3904TT1G?

    -5.0 dB.

  9. What are the delay, rise, and fall times of the MMBT3904TT1G?

    Delay time: -35 ns, Rise time: -35 ns, Fall time: -35 ns.

  10. Where can I find more detailed specifications and technical documentation for the MMBT3904TT1G?

    You can find detailed specifications and technical documentation on the onsemi website or through authorized distributors like Newark Electronics and LCSC.

Product Attributes

Transistor Type:NPN
Current - Collector (Ic) (Max):200 mA
Voltage - Collector Emitter Breakdown (Max):40 V
Vce Saturation (Max) @ Ib, Ic:300mV @ 5mA, 50mA
Current - Collector Cutoff (Max):- 
DC Current Gain (hFE) (Min) @ Ic, Vce:100 @ 10mA, 1V
Power - Max:300 mW
Frequency - Transition:300MHz
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:SC-75, SOT-416
Supplier Device Package:SC-75, SOT-416
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Same Series
MMBT3904TT1G
MMBT3904TT1G
TRANS NPN 40V 0.2A SC75 SOT416

Similar Products

Part Number MMBT3904TT1G MMBT3904TT1H MMBT3904WT1G MMBT3906TT1G MMBT3904LT1G MMBT3904TT1
Manufacturer onsemi onsemi onsemi onsemi onsemi onsemi
Product Status Active Active Active Active Active Obsolete
Transistor Type NPN - NPN PNP NPN -
Current - Collector (Ic) (Max) 200 mA - 200 mA 200 mA 200 mA -
Voltage - Collector Emitter Breakdown (Max) 40 V - 40 V 40 V 40 V -
Vce Saturation (Max) @ Ib, Ic 300mV @ 5mA, 50mA - 300mV @ 5mA, 50mA 400mV @ 5mA, 50mA 300mV @ 5mA, 50mA -
Current - Collector Cutoff (Max) - - - - - -
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 10mA, 1V - 100 @ 10mA, 1V 100 @ 10mA, 1V 100 @ 10mA, 1V -
Power - Max 300 mW - 150 mW 200 mW 300 mW -
Frequency - Transition 300MHz - 300MHz 250MHz 300MHz -
Operating Temperature -55°C ~ 150°C (TJ) - -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -
Mounting Type Surface Mount - Surface Mount Surface Mount Surface Mount -
Package / Case SC-75, SOT-416 - SC-70, SOT-323 SC-75, SOT-416 TO-236-3, SC-59, SOT-23-3 -
Supplier Device Package SC-75, SOT-416 - SC-70-3 (SOT323) SC-75, SOT-416 SOT-23-3 (TO-236) -

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