Overview
The MMBT3904WT1G is an NPN small signal bipolar transistor manufactured by onsemi. It is designed for general purpose amplifier and switching applications. This transistor is housed in a compact SOT-323 (SC-70) 3-lead package, making it suitable for low power surface mount applications. The device is known for its high efficiency, reliability, and compliance with environmental standards such as RoHS, and it is lead-free, halogen-free, and BFR-free.
Key Specifications
| Characteristic | Symbol | Value | Unit |
|---|---|---|---|
| Collector-Base Voltage | VCBO | 60 | V |
| Collector-Emitter Voltage | VCEO | 40 | V |
| Emitter-Base Voltage | VEBO | 6 | V |
| Collector Current | IC | 0.2 | A |
| Total Power Dissipation | Ptot | 200 | mW |
| Junction Temperature | TJ | -55 to +150 | °C |
| Transition Frequency | fT | 300 | MHz |
| DC Current Gain (hFE) | hFE | 100 - 400 | |
| Output Capacitance (Cobo) | Cobo | 4 pF | |
| Input Capacitance (Cibo) | Cibo | 8 pF | |
| Thermal Resistance, Junction to Ambient | RθJA | 403 °C/W |
Key Features
- Designed for general purpose amplifier and switching applications.
- Housed in a SOT-323 (SC-70) 3-lead package, suitable for low power surface mount applications.
- Lead-free, halogen-free, and BFR-free, compliant with RoHS standards.
- AEC-Q101 qualified and PPAP capable, making it suitable for automotive and other applications requiring unique site and control change requirements.
- High efficiency and reliability, with a minimum DC current gain (hFE) of 100 and a transition frequency of approximately 300 MHz.
- Compact, surface-mount form factor with robust plastic/epoxy package material.
- Moisture sensitivity level of 1, ensuring high reliability under various environmental conditions.
Applications
- General purpose amplifier applications.
- Switching applications.
- Automotive applications due to AEC-Q101 qualification and PPAP capability.
- Medium power amplification and switching circuits.
- High-frequency circuits due to its transition frequency of 300 MHz.
Q & A
- What is the maximum collector-emitter voltage of the MMBT3904WT1G transistor?
The maximum collector-emitter voltage (VCEO) is 40 V.
- What is the maximum collector current of the MMBT3904WT1G transistor?
The maximum collector current (IC) is 0.2 A.
- What is the transition frequency (fT) of the MMBT3904WT1G transistor?
The transition frequency (fT) is approximately 300 MHz.
- Is the MMBT3904WT1G transistor RoHS compliant?
Yes, the MMBT3904WT1G transistor is lead-free, halogen-free, and BFR-free, and it is RoHS compliant.
- What is the package type of the MMBT3904WT1G transistor?
The transistor is housed in a SOT-323 (SC-70) 3-lead package.
- What are the typical applications of the MMBT3904WT1G transistor?
The transistor is used in general purpose amplifier and switching applications, as well as in automotive and high-frequency circuits.
- What is the thermal resistance, junction to ambient (RθJA), of the MMBT3904WT1G transistor?
The thermal resistance, junction to ambient (RθJA), is approximately 403 °C/W.
- Is the MMBT3904WT1G transistor suitable for automotive applications?
Yes, it is AEC-Q101 qualified and PPAP capable, making it suitable for automotive and other applications requiring unique site and control change requirements.
- What is the moisture sensitivity level of the MMBT3904WT1G transistor?
The moisture sensitivity level is 1, indicating high reliability under various environmental conditions.
- What is the DC current gain (hFE) range of the MMBT3904WT1G transistor?
The DC current gain (hFE) range is from 100 to 400.
