MMBT3904WT1
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onsemi MMBT3904WT1

Manufacturer No:
MMBT3904WT1
Manufacturer:
onsemi
Package:
Cut Tape (CT)
Description:
TRANS NPN 40V 200MA SOT323
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The MMBT3904WT1 is a general-purpose NPN silicon transistor produced by onsemi. It is designed for low power surface mount applications and is housed in the SOT-323/SC-70 package. This transistor is AEC-Q101 qualified and PPAP capable, making it suitable for automotive and other applications requiring unique site and control change requirements. The device is Pb-free, halogen-free/BFR-free, and RoHS compliant.

Key Specifications

Characteristic Symbol Value Unit
Collector-Emitter Voltage VCEO 40 Vdc
Collector-Base Voltage VCBO 60 Vdc
Emitter-Base Voltage VEBO 6.0 Vdc
Collector Current - Continuous IC 200 mAdc
Junction and Storage Temperature TJ, Tstg -55 to +150 °C
Thermal Resistance, Junction-to-Ambient RθJA 833 °C/W
DC Current Gain (IC = 0.1 mAdc, VCE = 1.0 Vdc) hfe 100 - 400
Output Capacitance (VCB = 5.0 Vdc, IE = 0, f = 1.0 MHz) Cobo 4.0 - 4.5 pF
Input Capacitance (VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz) Cibo pF
Noise Figure (VCE = 5.0 Vdc, IC = 100 μAdc, RS = 1.0 kΩ, f = 1.0 kHz) NF 5.0 dB

Key Features

  • General-purpose amplifier transistor designed for low power surface mount applications.
  • Housed in the SOT-323/SC-70 package.
  • AEC-Q101 qualified and PPAP capable, suitable for automotive and other applications requiring unique site and control change requirements.
  • Pb-free, halogen-free/BFR-free, and RoHS compliant.
  • High DC current gain (hfe) ranging from 100 to 400.
  • Low thermal resistance, junction-to-ambient (RθJA) of 833 °C/W.

Applications

  • General-purpose amplifier applications.
  • Automotive electronics.
  • Consumer electronics.
  • Industrial control systems.
  • Low power surface mount applications.

Q & A

  1. What is the collector-emitter voltage rating of the MMBT3904WT1 transistor?

    The collector-emitter voltage rating is 40 Vdc.

  2. What package type is the MMBT3904WT1 transistor housed in?

    The transistor is housed in the SOT-323/SC-70 package.

  3. Is the MMBT3904WT1 transistor RoHS compliant?

    Yes, the transistor is Pb-free, halogen-free/BFR-free, and RoHS compliant.

  4. What is the DC current gain range of the MMBT3904WT1 transistor?

    The DC current gain (hfe) ranges from 100 to 400.

  5. What is the thermal resistance, junction-to-ambient, of the MMBT3904WT1 transistor?

    The thermal resistance, junction-to-ambient (RθJA), is 833 °C/W.

  6. What are the typical applications of the MMBT3904WT1 transistor?

    Typical applications include general-purpose amplifier applications, automotive electronics, consumer electronics, and industrial control systems.

  7. Is the MMBT3904WT1 transistor AEC-Q101 qualified?

    Yes, the transistor is AEC-Q101 qualified and PPAP capable.

  8. What is the collector current rating of the MMBT3904WT1 transistor?

    The collector current rating is 200 mAdc.

  9. What is the junction and storage temperature range of the MMBT3904WT1 transistor?

    The junction and storage temperature range is -55 to +150 °C.

  10. What is the noise figure of the MMBT3904WT1 transistor?

    The noise figure (NF) is 5.0 dB at VCE = 5.0 Vdc, IC = 100 μAdc, RS = 1.0 kΩ, and f = 1.0 kHz.

Product Attributes

Transistor Type:- 
Current - Collector (Ic) (Max):- 
Voltage - Collector Emitter Breakdown (Max):- 
Vce Saturation (Max) @ Ib, Ic:- 
Current - Collector Cutoff (Max):- 
DC Current Gain (hFE) (Min) @ Ic, Vce:- 
Power - Max:- 
Frequency - Transition:- 
Operating Temperature:- 
Mounting Type:- 
Package / Case:- 
Supplier Device Package:- 
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In Stock

$0.02
47,215

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Similar Products

Part Number MMBT3904WT1 MMBT3904WT1H MMBT3904WT1G MMBT3906WT1 MMBT3904LT1 MMBT3904TT1
Manufacturer onsemi onsemi onsemi onsemi Infineon Technologies onsemi
Product Status Obsolete Active Active Obsolete Obsolete Obsolete
Transistor Type - - NPN - NPN -
Current - Collector (Ic) (Max) - - 200 mA - 200 mA -
Voltage - Collector Emitter Breakdown (Max) - - 40 V - 40 V -
Vce Saturation (Max) @ Ib, Ic - - 300mV @ 5mA, 50mA - 300mV @ 5mA, 50mA -
Current - Collector Cutoff (Max) - - - - - -
DC Current Gain (hFE) (Min) @ Ic, Vce - - 100 @ 10mA, 1V - 100 @ 10mA, 1V -
Power - Max - - 150 mW - 225 mW -
Frequency - Transition - - 300MHz - 300MHz -
Operating Temperature - - -55°C ~ 150°C (TJ) - - -
Mounting Type - - Surface Mount - Surface Mount -
Package / Case - - SC-70, SOT-323 - TO-236-3, SC-59, SOT-23-3 -
Supplier Device Package - - SC-70-3 (SOT323) - SOT-23-3 (TO-236) -

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