Overview
The MMBT3906WT1G is a PNP general-purpose transistor manufactured by onsemi. It is designed for low power surface mount applications and is housed in the SOT-323/SC-70 package. This transistor is AEC-Q101 qualified and PPAP capable, making it suitable for automotive and other applications requiring unique site and control change requirements. The device is Pb-free, halogen-free/BFR-free, and RoHS compliant.
Key Specifications
| Characteristic | Symbol | Value | Unit |
|---|---|---|---|
| Collector-Emitter Voltage | VCEO | -40 | Vdc |
| Collector-Base Voltage | VCBO | -40 | Vdc |
| Emitter-Base Voltage | VEBO | -5.0 | Vdc |
| Collector Current - Continuous | IC | -200 | mAdc |
| Total Device Dissipation | PD | 150 | mW |
| Thermal Resistance, Junction-to-Ambient | RθJA | 833 | °C/W |
| Junction and Storage Temperature | TJ, Tstg | -55 to +150 | °C |
| Collector-Emitter Breakdown Voltage | V(BR)CEO | -40 | Vdc |
| Collector-Base Breakdown Voltage | V(BR)CBO | -40 | Vdc |
| Emitter-Base Breakdown Voltage | V(BR)EBO | -5.0 | Vdc |
| DC Current Gain | hFE | 30 - 300 | |
| Collector-Emitter Saturation Voltage | VCE(sat) | -0.25 to -0.4 | Vdc |
| Base-Emitter Saturation Voltage | VBE(sat) | -0.85 to -0.95 | Vdc |
Key Features
- AEC-Q101 qualified and PPAP capable, suitable for automotive and other applications requiring unique site and control change requirements.
- Pb-free, halogen-free/BFR-free, and RoHS compliant.
- Housed in the SOT-323/SC-70 package, designed for low power surface mount applications.
- General-purpose amplifier applications.
- High DC current gain (hFE) ranging from 30 to 300.
- Low collector-emitter and base-emitter saturation voltages.
Applications
- General-purpose amplifier applications.
- Automotive electronics.
- Consumer electronics.
- Industrial control systems.
- Low power surface mount applications.
Q & A
- What is the maximum collector-emitter voltage for the MMBT3906WT1G?
The maximum collector-emitter voltage (VCEO) for the MMBT3906WT1G is -40 Vdc.
- What is the thermal resistance, junction-to-ambient for this transistor?
The thermal resistance, junction-to-ambient (RθJA) is 833 °C/W.
- What is the range of junction and storage temperature for the MMBT3906WT1G?
The junction and storage temperature range is -55 to +150 °C.
- Is the MMBT3906WT1G RoHS compliant?
- What package type is the MMBT3906WT1G housed in?
The MMBT3906WT1G is housed in the SOT-323/SC-70 package.
- What are the typical applications for the MMBT3906WT1G?
The MMBT3906WT1G is used in general-purpose amplifier applications, automotive electronics, consumer electronics, and industrial control systems.
- What is the DC current gain (hFE) range for the MMBT3906WT1G?
The DC current gain (hFE) ranges from 30 to 300.
- What are the collector-emitter and base-emitter saturation voltages for the MMBT3906WT1G?
The collector-emitter saturation voltage (VCE(sat)) is -0.25 to -0.4 Vdc, and the base-emitter saturation voltage (VBE(sat)) is -0.85 to -0.95 Vdc.
- Is the MMBT3906WT1G AEC-Q101 qualified?
- What is the maximum collector current for the MMBT3906WT1G?
The maximum collector current (IC) is -200 mAdc.
