Overview
The SMMBT3906WT1G is a general-purpose PNP bipolar transistor manufactured by onsemi. It is housed in the SC-70/SOT-323 package, which is designed for low-power surface mount applications. This transistor is AEC-Q101 qualified and PPAP capable, making it suitable for automotive and other applications requiring unique site and control change requirements. The device is Pb-free, halogen-free/BFR-free, and RoHS compliant.
Key Specifications
| Characteristic | Symbol | Min | Max | Unit |
|---|---|---|---|---|
| Collector-Emitter Voltage | VCEO | -40 | -40 | Vdc |
| Collector-Base Voltage | VCBO | -40 | -40 | Vdc |
| Emitter-Base Voltage | VEBO | -5.0 | -5.0 | Vdc |
| Collector Current - Continuous | IC | -200 | -200 | mAdc |
| Total Device Dissipation @ TA = 25°C | PD | 150 | 150 | mW |
| Thermal Resistance, Junction-to-Ambient | RθJA | 833 | 833 | °C/W |
| Junction and Storage Temperature | TJ, Tstg | -55 to +150 | -55 to +150 | °C |
| Current-Gain - Bandwidth Product | fT | 250 | 250 | MHz |
| Output Capacitance | Cobo | 4.5 | 4.5 | pF |
| Input Capacitance | Cibo | 10.0 | 10.0 | pF |
| Input Impedance | hie | 12 | 12 | kΩ |
| Delay Time | td | 35 | 35 | ns |
| Rise Time | tr | 35 | 35 | ns |
| Storage Time | ts | 225 | 225 | ns |
| Fall Time | tf | 75 | 75 | ns |
Key Features
- AEC-Q101 qualified and PPAP capable, suitable for automotive and other applications requiring unique site and control change requirements.
- Pb-free, halogen-free/BFR-free, and RoHS compliant.
- General-purpose amplifier applications.
- Housed in the SC-70/SOT-323 package for low-power surface mount applications.
- High current-gain - bandwidth product (fT) of 250 MHz.
- Low noise figure.
- Fast switching times (delay time, rise time, storage time, and fall time).
Applications
- General-purpose amplifier applications.
- Automotive electronics.
- Consumer electronics.
- Industrial control systems.
- Switching and linear amplifier circuits.
Q & A
- What is the package type of the SMMBT3906WT1G transistor?
The SMMBT3906WT1G is housed in the SC-70/SOT-323 package.
- What are the maximum collector-emitter and collector-base voltages for the SMMBT3906WT1G?
The maximum collector-emitter voltage (VCEO) is -40 Vdc, and the maximum collector-base voltage (VCBO) is -40 Vdc.
- What is the continuous collector current rating for the SMMBT3906WT1G?
The continuous collector current (IC) is -200 mA.
- What is the thermal resistance, junction-to-ambient (RθJA) for the SMMBT3906WT1G?
The thermal resistance, junction-to-ambient (RθJA), is 833 °C/W.
- What are the junction and storage temperature ranges for the SMMBT3906WT1G?
The junction and storage temperature ranges are -55 to +150 °C.
- Is the SMMBT3906WT1G RoHS compliant?
Yes, the SMMBT3906WT1G is Pb-free, halogen-free/BFR-free, and RoHS compliant.
- What is the current-gain - bandwidth product (fT) of the SMMBT3906WT1G?
The current-gain - bandwidth product (fT) is 250 MHz.
- What are the typical switching times for the SMMBT3906WT1G?
The typical switching times include a delay time of 35 ns, rise time of 35 ns, storage time of 225 ns, and fall time of 75 ns.
- What are some common applications for the SMMBT3906WT1G transistor?
Common applications include general-purpose amplifier applications, automotive electronics, consumer electronics, and industrial control systems.
- Is the SMMBT3906WT1G suitable for automotive applications?
Yes, the SMMBT3906WT1G is AEC-Q101 qualified and PPAP capable, making it suitable for automotive and other applications requiring unique site and control change requirements.
