Overview
The SMMBT3906LT1G is a general-purpose PNP transistor manufactured by onsemi. This transistor is part of the MMBT3906L and SMMBT3906L series, which are known for their reliability and versatility in various electronic applications. The SMMBT3906LT1G is AEC-Q101 qualified and PPAP capable, making it suitable for automotive and other demanding applications. It is also Pb-free, halogen-free, and RoHS compliant, ensuring environmental sustainability.
Key Specifications
| Characteristic | Symbol | Min | Max | Unit |
|---|---|---|---|---|
| Collector-Emitter Voltage | VCEO | -40 | -40 | Vdc |
| Collector-Base Voltage | VCBO | -40 | -40 | Vdc |
| Emitter-Base Voltage | VEBO | -5.0 | -5.0 | Vdc |
| Collector Current - Continuous | IC | -200 | -200 | mAdc |
| Collector Current - Peak | ICM | -800 | -800 | mAdc |
| Thermal Resistance, Junction-to-Ambient | RθJA | 417 | 417 | °C/W |
| Junction and Storage Temperature | TJ, Tstg | -65 to +150 | -65 to +150 | °C |
| DC Current Gain (IC = -1.0 mAdc, VCE = -1.0 Vdc) | HFE | 60 | 300 | - |
| Collector-Emitter Saturation Voltage (IC = -10 mAdc, IB = -1.0 mAdc) | VCE(sat) | -0.25 | -0.4 | Vdc |
| Base-Emitter Saturation Voltage (IC = -10 mAdc, IB = -1.0 mAdc) | VBE(sat) | -0.65 | -0.85 | Vdc |
Key Features
- AEC-Q101 qualified and PPAP capable, making it suitable for automotive and other demanding applications.
- Pb-free, halogen-free, and RoHS compliant for environmental sustainability.
- High DC current gain (HFE) ranging from 60 to 300.
- Low collector-emitter and base-emitter saturation voltages.
- High thermal resistance, junction-to-ambient (RθJA) of 417 °C/W.
- Wide junction and storage temperature range of -65 to +150 °C.
Applications
The SMMBT3906LT1G transistor is versatile and can be used in a variety of applications, including:
- Automotive systems due to its AEC-Q101 qualification.
- General-purpose switching and amplification circuits.
- Audio and signal processing circuits.
- Power management and control circuits.
- Consumer electronics and industrial control systems.
Q & A
- What is the maximum collector-emitter voltage for the SMMBT3906LT1G transistor?
The maximum collector-emitter voltage (VCEO) is -40 Vdc. - What is the continuous collector current rating for this transistor?
The continuous collector current (IC) is -200 mAdc. - Is the SMMBT3906LT1G transistor RoHS compliant?
Yes, it is Pb-free, halogen-free, and RoHS compliant. - What is the thermal resistance, junction-to-ambient (RθJA) for this transistor?
The thermal resistance, junction-to-ambient (RθJA), is 417 °C/W. - What is the DC current gain (HFE) range for the SMMBT3906LT1G transistor?
The DC current gain (HFE) ranges from 60 to 300. - What are the typical collector-emitter and base-emitter saturation voltages?
The typical collector-emitter saturation voltage (VCE(sat)) is -0.25 to -0.4 Vdc, and the base-emitter saturation voltage (VBE(sat)) is -0.65 to -0.85 Vdc. - What is the junction and storage temperature range for this transistor?
The junction and storage temperature range is -65 to +150 °C. - Is the SMMBT3906LT1G suitable for automotive applications?
Yes, it is AEC-Q101 qualified and PPAP capable. - What package type is the SMMBT3906LT1G available in?
The transistor is available in the SOT-23 (TO-236) package. - What are some common applications for the SMMBT3906LT1G transistor?
Common applications include automotive systems, general-purpose switching and amplification circuits, audio and signal processing, power management, and consumer electronics.
