Overview
The SMMBT3906LT3G is a general-purpose PNP silicon transistor produced by onsemi. This transistor is designed for a wide range of applications, including automotive and other sectors that require high reliability and compliance with stringent quality standards. It is AEC-Q101 qualified and PPAP capable, ensuring it meets the rigorous demands of automotive and industrial environments. The device is also Pb-free, halogen-free/BFR-free, and RoHS compliant, making it an environmentally friendly choice.
Key Specifications
| Characteristic | Symbol | Value | Unit |
|---|---|---|---|
| Collector-Emitter Voltage | VCEO | -40 | Vdc |
| Collector-Base Voltage | VCBO | -40 | Vdc |
| Emitter-Base Voltage | VEBO | -5.0 | Vdc |
| Collector Current - Continuous | IC | -200 | mAdc |
| Collector Current - Peak | ICM | -800 | mAdc |
| Thermal Resistance, Junction-to-Ambient | RθJA | 417 | °C/W |
| Junction and Storage Temperature | TJ, Tstg | -65 to +150 | °C |
| DC Current Gain (IC = -0.1 mAdc, VCE = -1.0 Vdc) | HFE | 60 - 300 | - |
| Collector-Emitter Saturation Voltage (IC = -10 mAdc, IB = -1.0 mAdc) | VCE(sat) | -0.25 | Vdc |
| Base-Emitter Saturation Voltage (IC = -10 mAdc, IB = -1.0 mAdc) | VBE(sat) | -0.65 | Vdc |
| Current-Gain - Bandwidth Product (IC = -10 mAdc, VCE = -20 Vdc, f = 100 MHz) | fT | 250 | MHz |
Key Features
- AEC-Q101 qualified and PPAP capable, ensuring high reliability for automotive and industrial applications.
- Pb-free, halogen-free/BFR-free, and RoHS compliant, making it environmentally friendly.
- High DC current gain with a range of 60 to 300.
- Low collector-emitter and base-emitter saturation voltages.
- High current-gain - bandwidth product of 250 MHz.
- Small signal characteristics include low input capacitance and high input impedance.
- Fast switching times with delay, rise, storage, and fall times suitable for high-speed applications.
Applications
The SMMBT3906LT3G transistor is versatile and can be used in a variety of applications, including:
- Automotive systems: Due to its AEC-Q101 qualification, it is suitable for use in automotive electronics such as sensors, actuators, and control modules.
- Industrial control systems: It can be used in industrial automation, motor control, and power management systems.
- Consumer electronics: Suitable for use in audio amplifiers, switching circuits, and other general-purpose electronic devices.
- Medical devices: Can be used in medical equipment that requires reliable and high-performance transistors.
Q & A
- What is the maximum collector-emitter voltage of the SMMBT3906LT3G transistor? The maximum collector-emitter voltage is -40 Vdc.
- Is the SMMBT3906LT3G transistor RoHS compliant? Yes, it is Pb-free, halogen-free/BFR-free, and RoHS compliant.
- What is the DC current gain range of the SMMBT3906LT3G transistor? The DC current gain range is from 60 to 300.
- What is the thermal resistance, junction-to-ambient of the SMMBT3906LT3G transistor? The thermal resistance, junction-to-ambient is 417 °C/W.
- What are the typical applications of the SMMBT3906LT3G transistor? It is used in automotive systems, industrial control systems, consumer electronics, and medical devices.
- What is the current-gain - bandwidth product of the SMMBT3906LT3G transistor? The current-gain - bandwidth product is 250 MHz.
- What are the switching times of the SMMBT3906LT3G transistor? The delay time is 35 ns, rise time is 35 ns, storage time is 225 ns, and fall time is 75 ns.
- Is the SMMBT3906LT3G transistor suitable for high-speed applications? Yes, it is suitable due to its fast switching times and high current-gain - bandwidth product.
- What is the package type of the SMMBT3906LT3G transistor? It is packaged in SOT-23 (TO-236).
- What is the junction and storage temperature range of the SMMBT3906LT3G transistor? The junction and storage temperature range is -65 to +150 °C.
