Overview
The SMMBT3904LT3G is a general-purpose NPN silicon transistor produced by onsemi. This device is part of the MMBT3904L series and is designed for a wide range of applications requiring reliable and efficient transistor performance. The SMMBT3904LT3G is packaged in a SOT-23 (TO-236) case, making it suitable for compact and high-density circuit designs. It is Pb-free, halogen-free, and RoHS compliant, ensuring environmental sustainability and regulatory compliance.
Key Specifications
| Characteristic | Symbol | Value | Unit |
|---|---|---|---|
| Collector-Emitter Voltage | VCEO | 40 | Vdc |
| Collector-Base Voltage | VCBO | 60 | Vdc |
| Emitter-Base Voltage | VEBO | 6.0 | Vdc |
| Collector Current - Continuous | IC | 200 | mAdc |
| Collector Current - Peak | ICM | 900 | mAdc |
| Total Device Dissipation (FR-5 Board @ TA = 25°C) | PD | 225 | mW |
| Thermal Resistance, Junction-to-Ambient (Alumina Substrate) | RθJA | 417 | °C/W |
| Junction and Storage Temperature | TJ, Tstg | -55 to +150 | °C |
| DC Current Gain (IC = 0.1 mAdc, VCE = 1.0 Vdc) | HFE | 40 - 70 | - |
| Collector-Emitter Saturation Voltage (IC = 10 mAdc, IB = 1.0 mAdc) | VCE(sat) | 0.2 - 0.3 | Vdc |
| Base-Emitter Saturation Voltage (IC = 10 mAdc, IB = 1.0 mAdc) | VBE(sat) | 0.65 - 0.85 | Vdc |
Key Features
- Pb-free, halogen-free, and RoHS compliant, ensuring environmental sustainability and regulatory compliance.
- AEC-Q101 qualified and PPAP capable, making it suitable for automotive and other demanding applications.
- High collector-emitter breakdown voltage (VCEO) of 40 Vdc and collector-base breakdown voltage (VCBO) of 60 Vdc.
- Continuous collector current of 200 mAdc and peak collector current of 900 mAdc.
- Low thermal resistance, junction-to-ambient (RθJA) of 417 °C/W on an alumina substrate.
- Wide operating temperature range from -55°C to +150°C.
- High DC current gain (HFE) ranging from 40 to 70.
- Low collector-emitter and base-emitter saturation voltages.
Applications
- General-purpose switching and amplification in electronic circuits.
- Automotive systems, including power management and signal processing.
- Consumer electronics, such as audio equipment and home appliances.
- Industrial control systems and automation.
- Medical devices requiring reliable and efficient transistor performance.
Q & A
- What is the collector-emitter breakdown voltage of the SMMBT3904LT3G?
The collector-emitter breakdown voltage (VCEO) is 40 Vdc.
- What is the maximum continuous collector current?
The maximum continuous collector current (IC) is 200 mAdc.
- Is the SMMBT3904LT3G RoHS compliant?
Yes, the SMMBT3904LT3G is Pb-free, halogen-free, and RoHS compliant.
- What is the thermal resistance, junction-to-ambient, on an alumina substrate?
The thermal resistance, junction-to-ambient (RθJA), is 417 °C/W on an alumina substrate.
- What is the operating temperature range of the SMMBT3904LT3G?
The operating temperature range is from -55°C to +150°C.
- What are the typical DC current gain values for the SMMBT3904LT3G?
The DC current gain (HFE) ranges from 40 to 70.
- What are the collector-emitter and base-emitter saturation voltages?
The collector-emitter saturation voltage (VCE(sat)) is 0.2 - 0.3 Vdc, and the base-emitter saturation voltage (VBE(sat)) is 0.65 - 0.85 Vdc.
- Is the SMMBT3904LT3G suitable for automotive applications?
Yes, it is AEC-Q101 qualified and PPAP capable, making it suitable for automotive and other demanding applications.
- What is the package type of the SMMBT3904LT3G?
The SMMBT3904LT3G is packaged in a SOT-23 (TO-236) case.
- What are some typical applications of the SMMBT3904LT3G?
It is used in general-purpose switching and amplification, automotive systems, consumer electronics, industrial control systems, and medical devices.
