Overview
The MMBT3906LT3G is a general-purpose PNP silicon transistor manufactured by onsemi. This device is part of the MMBT3906L series and is designed for a wide range of applications, including automotive and other sectors requiring high reliability and unique site and control change requirements. It is AEC-Q101 qualified and PPAP capable, ensuring it meets stringent automotive standards. The transistor is lead-free, halogen-free, and RoHS compliant, making it environmentally friendly.
Key Specifications
| Characteristic | Symbol | Value | Unit |
|---|---|---|---|
| Collector-Emitter Voltage | VCEO | -40 | Vdc |
| Collector-Base Voltage | VCBO | -40 | Vdc |
| Emitter-Base Voltage | VEBO | -5.0 | Vdc |
| Collector Current - Continuous | IC | -200 | mAdc |
| Collector Current - Peak | ICM | -800 | mAdc |
| Thermal Resistance, Junction-to-Ambient | RθJA | 417 | °C/W |
| Junction and Storage Temperature | TJ, Tstg | -65 to +150 | °C |
| DC Current Gain (IC = -1.0 mAdc, VCE = -1.0 Vdc) | HFE | 60 - 300 | - |
| Collector-Emitter Saturation Voltage (IC = -10 mAdc, IB = -1.0 mAdc) | VCE(sat) | -0.25 | Vdc |
| Base-Emitter Saturation Voltage (IC = -10 mAdc, IB = -1.0 mAdc) | VBE(sat) | -0.65 | Vdc |
| Current-Gain - Bandwidth Product (IC = -10 mAdc, VCE = -20 Vdc, f = 100 MHz) | fT | 250 | MHz |
Key Features
- AEC-Q101 qualified and PPAP capable, suitable for automotive and other high-reliability applications.
- Pb-free, halogen-free, and RoHS compliant, ensuring environmental sustainability.
- High DC current gain (HFE) ranging from 60 to 300.
- Low collector-emitter saturation voltage (VCE(sat)) and base-emitter saturation voltage (VBE(sat)).
- High current-gain - bandwidth product (fT) of 250 MHz.
- Small signal characteristics include low input capacitance and high input impedance.
- Fast switching times with delay, rise, storage, and fall times optimized for high-speed applications.
Applications
- Automotive systems requiring high reliability and compliance with automotive standards.
- General-purpose amplification and switching in electronic circuits.
- Audio and signal processing applications due to its low noise figure and high bandwidth.
- Industrial control systems and power management circuits.
- Consumer electronics where high performance and environmental compliance are necessary.
Q & A
- What is the maximum collector-emitter voltage for the MMBT3906LT3G?
The maximum collector-emitter voltage (VCEO) is -40 Vdc.
- Is the MMBT3906LT3G suitable for automotive applications?
Yes, it is AEC-Q101 qualified and PPAP capable, making it suitable for automotive and other high-reliability applications.
- What is the thermal resistance, junction-to-ambient, for this transistor?
The thermal resistance, junction-to-ambient (RθJA), is 417 °C/W.
- What are the typical DC current gain values for the MMBT3906LT3G?
The DC current gain (HFE) ranges from 60 to 300.
- What is the collector-emitter saturation voltage for the MMBT3906LT3G?
The collector-emitter saturation voltage (VCE(sat)) is typically -0.25 Vdc at IC = -10 mAdc and IB = -1.0 mAdc.
- Is the MMBT3906LT3G environmentally friendly?
Yes, it is Pb-free, halogen-free, and RoHS compliant.
- What is the current-gain - bandwidth product for this transistor?
The current-gain - bandwidth product (fT) is 250 MHz.
- What are the typical switching times for the MMBT3906LT3G?
The delay time (td) is 35 ns, rise time (tr) is 35 ns, storage time (ts) is 225 ns, and fall time (tf) is 75 ns.
- What are some common applications for the MMBT3906LT3G?
Common applications include automotive systems, general-purpose amplification, audio and signal processing, industrial control systems, and consumer electronics.
- What is the junction and storage temperature range for the MMBT3906LT3G?
The junction and storage temperature range is -65 to +150 °C.
