Overview
The NX3008PBKW,115 is a P-channel enhancement mode Field-Effect Transistor (FET) manufactured by Nexperia USA Inc. This MOSFET is designed in a small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package, utilizing Trench technology to enhance performance. It is suitable for a variety of applications requiring low power consumption and high efficiency.
Key Specifications
| Parameter | Value | Unit |
|---|---|---|
| Drain-Source Breakdown Voltage (Vds) | 30 | V |
| Continuous Drain Current (Id) | 200 | mA |
| Drain-Source Resistance (Rds On) | 4.1 | Ohms |
| Gate-Source Voltage (Vgs) | -20 to 10 | V |
| IDSS Drain Leakage Current at Tj = 25°C | -1 | µA |
| IDSS Drain Leakage Current at Tj = 150°C | -10 | µA |
Key Features
- P-channel enhancement mode Field-Effect Transistor (FET)
- Trench technology for improved performance
- Small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package
- Low power consumption and high efficiency
- High drain-source breakdown voltage of 30 V
- Continuous drain current of 200 mA
Applications
The NX3008PBKW,115 is versatile and can be used in various applications such as:
- Power management circuits
- Switching and amplification in low power devices
- Portable electronics
- Automotive and industrial control systems
Q & A
- What is the drain-source breakdown voltage of the NX3008PBKW,115?
The drain-source breakdown voltage is 30 V. - What is the continuous drain current of the NX3008PBKW,115?
The continuous drain current is 200 mA. - What package type is the NX3008PBKW,115 available in?
The NX3008PBKW,115 is available in a small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package. - What technology is used in the NX3008PBKW,115?
The NX3008PBKW,115 uses Trench technology. - What are the typical applications for the NX3008PBKW,115?
Typical applications include power management circuits, switching and amplification in low power devices, portable electronics, and automotive and industrial control systems. - What is the gate-source voltage range for the NX3008PBKW,115?
The gate-source voltage range is -20 to 10 V. - What is the drain-source resistance (Rds On) of the NX3008PBKW,115?
The drain-source resistance (Rds On) is 4.1 Ohms. - What is the IDSS drain leakage current at Tj = 25°C?
The IDSS drain leakage current at Tj = 25°C is -1 µA. - What is the IDSS drain leakage current at Tj = 150°C?
The IDSS drain leakage current at Tj = 150°C is -10 µA. - Who is the manufacturer of the NX3008PBKW,115?
The manufacturer is Nexperia USA Inc.
