0
My RFQ
NX3008PBKT,115
  • Share:

NXP USA Inc. NX3008PBKT,115

Manufacturer No:
NX3008PBKT,115
Manufacturer:
NXP USA Inc.
Package:
Tape & Reel (TR)
Description:
MOSFET P-CH 30V 200MA SC75
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The NX3008PBKS is a 30 V, 200 mA dual P-channel Trench MOSFET produced by Nexperia. This component is automotive qualified and comes in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package. It is designed for use in various applications, including automotive, industrial, power, computing, consumer, mobile, and wearables.

Key Specifications

Parameter Value Unit
Type number NX3008PBKS
Package SOT363 (SC-88)
Channel type P-channel
Number of transistors 2
VDS [max] 30 V
RDSon [max] @ VGS = 4.5 V; @25°C 4100 mΩ
RDSon [max] @ VGS = 2.5 V 6500 mΩ
Tj [max] 150 °C
ID [max] 200 mA
QGD [typ] 0.09 nC
QG(tot) [typ] @ VGS = 4.5 V 0.55 nC
Ptot [max] 0.445 W
VGSth [typ] -0.9 V
Automotive qualified Yes
Ciss [typ] 31 pF
Coss [typ] 6.5 pF

Key Features

  • Dual P-channel enhancement mode Field-Effect Transistor (FET)
  • Automotive qualified (AEC-Q101 compliant)
  • Very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package
  • Logic level gate
  • Low on-state resistance (RDSon)
  • High operating temperature range (-55°C to 150°C)

Applications

  • Automotive systems
  • Industrial control systems
  • Power management systems
  • Computing and consumer electronics
  • Mobile and wearable devices

Q & A

  1. What is the maximum drain-source voltage (VDS) of the NX3008PBKS?

    The maximum drain-source voltage (VDS) is 30 V.

  2. What is the package type of the NX3008PBKS?

    The package type is SOT363 (SC-88).

  3. Is the NX3008PBKS automotive qualified?

    Yes, it is automotive qualified and complies with AEC-Q101 standards.

  4. What is the maximum continuous drain current (ID) of the NX3008PBKS?

    The maximum continuous drain current (ID) is 200 mA.

  5. What is the typical gate threshold voltage (VGSth) of the NX3008PBKS?

    The typical gate threshold voltage (VGSth) is -0.9 V.

  6. What is the maximum operating junction temperature (Tj) of the NX3008PBKS?

    The maximum operating junction temperature (Tj) is 150°C.

  7. What is the input capacitance (Ciss) of the NX3008PBKS?

    The input capacitance (Ciss) is typically 31 pF.

  8. What is the total gate charge (QG(tot)) at VGS = 4.5 V?

    The total gate charge (QG(tot)) at VGS = 4.5 V is typically 0.55 nC.

  9. What are the typical applications of the NX3008PBKS?

    The typical applications include automotive systems, industrial control systems, power management systems, computing and consumer electronics, and mobile and wearable devices.

  10. Where can I find more technical information and support for the NX3008PBKS?

    You can find more technical information and support on the Nexperia website, including datasheets, application notes, and design support tools.

Product Attributes

FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:200mA (Ta)
Drive Voltage (Max Rds On, Min Rds On):2.5V, 4.5V
Rds On (Max) @ Id, Vgs:4.1Ohm @ 200mA, 4.5V
Vgs(th) (Max) @ Id:1.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:0.72 nC @ 4.5 V
Vgs (Max):±8V
Input Capacitance (Ciss) (Max) @ Vds:46 pF @ 15 V
FET Feature:- 
Power Dissipation (Max):250mW (Ta), 770mW (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:SC-75
Package / Case:SC-75, SOT-416
0 Remaining View Similar

In Stock

$0.03
24,933

Please send RFQ , we will respond immediately.

Same Series
RD15S10HT0/AA
RD15S10HT0/AA
CONN D-SUB RCPT 15POS CRIMP
DD15S20LV5S/AA
DD15S20LV5S/AA
CONN D-SUB HD RCPT 15P SLDR CUP
RD15S10HE30/AA
RD15S10HE30/AA
CONN D-SUB RCPT 15POS CRIMP
CBC13W3S10HE20/AA
CBC13W3S10HE20/AA
CONN D-SUB RCPT 13POS CRIMP
DD15S20LVLS/AA
DD15S20LVLS/AA
CONN D-SUB HD RCPT 15P SLDR CUP
CBC47W1S100E30
CBC47W1S100E30
CONN D-SUB RCPT 47POS CRIMP
DD15S20J0S/AA
DD15S20J0S/AA
CONN D-SUB HD RCPT 15P SLDR CUP
CBC13W3S10H0S/AA
CBC13W3S10H0S/AA
CONN D-SUB RCPT 13POS CRIMP
DD15S20JVLS/AA
DD15S20JVLS/AA
CONN D-SUB HD RCPT 15P SLDR CUP
DD44S32S60T2X
DD44S32S60T2X
CONN D-SUB HD RCPT 44P VERT SLDR
DD26S20WE20/AA
DD26S20WE20/AA
CONN D-SUB HD RCPT 26P SLDR CUP
DD44S32S0V5X
DD44S32S0V5X
CONN D-SUB HD RCPT 44P VERT SLDR

Similar Products

Part Number NX3008PBKT,115 NX3008PBKW,115 NX3008NBKT,115
Manufacturer NXP USA Inc. Nexperia USA Inc. NXP USA Inc.
Product Status Obsolete Active Obsolete
FET Type P-Channel P-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V 30 V 30 V
Current - Continuous Drain (Id) @ 25°C 200mA (Ta) 200mA (Ta) 350mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V 2.5V, 4.5V 1.8V, 4.5V
Rds On (Max) @ Id, Vgs 4.1Ohm @ 200mA, 4.5V 4.1Ohm @ 200mA, 4.5V 1.4Ohm @ 350mA, 4.5V
Vgs(th) (Max) @ Id 1.1V @ 250µA 1.1V @ 250µA 1.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 0.72 nC @ 4.5 V 0.72 nC @ 4.5 V 0.68 nC @ 4.5 V
Vgs (Max) ±8V ±8V ±8V
Input Capacitance (Ciss) (Max) @ Vds 46 pF @ 15 V 46 pF @ 15 V 50 pF @ 15 V
FET Feature - - -
Power Dissipation (Max) 250mW (Ta), 770mW (Tc) 260mW (Ta), 830mW (Tc) 250mW (Ta), 770mW (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Supplier Device Package SC-75 SOT-323 SC-75
Package / Case SC-75, SOT-416 SC-70, SOT-323 SC-75, SOT-416

Related Product By Categories

NTNS3193NZT5G
NTNS3193NZT5G
onsemi
MOSFET N-CH 20V 224MA 3XLLGA
2N7002HSX
2N7002HSX
Nexperia USA Inc.
2N7002HS/SOT363/SC-88
STP5NK60Z
STP5NK60Z
STMicroelectronics
MOSFET N-CH 600V 5A TO220AB
STF13N80K5
STF13N80K5
STMicroelectronics
MOSFET N-CH 800V 12A TO220FP
STD5NM60T4
STD5NM60T4
STMicroelectronics
MOSFET N-CH 600V 5A DPAK
STF5N95K5
STF5N95K5
STMicroelectronics
MOSFET N-CH 950V 3.5A TO220FP
STF28N65M2
STF28N65M2
STMicroelectronics
MOSFET N-CH 650V 20A TO220FP
STB30N65M5
STB30N65M5
STMicroelectronics
MOSFET N-CH 650V 22A D2PAK
BSS138K-7
BSS138K-7
Diodes Incorporated
MOSFET N-CH 50V SOT23 T&R 3K
NTMFS5H409NLT3G
NTMFS5H409NLT3G
onsemi
MOSFET N-CH 40V 41A/270A 5DFN
FQD13N10LTM_NBEL001
FQD13N10LTM_NBEL001
onsemi
MOSFET N-CH 100V 10A DPAK
STF13NM60N-H
STF13NM60N-H
STMicroelectronics
MOSFET N-CH 600V 11A TO220FP

Related Product By Brand

PMEG2005EGW115
PMEG2005EGW115
NXP USA Inc.
NOW NEXPERIA PMEG2005EGW RECTIFI
A2T18H455W23NR6
A2T18H455W23NR6
NXP USA Inc.
AIRFAST RF POWER LDMOS TRANSISTO
S912ZVL64F0VLFR
S912ZVL64F0VLFR
NXP USA Inc.
IC MCU 16BIT 64KB FLASH 48LQFP
MCF52110CAE66
MCF52110CAE66
NXP USA Inc.
IC MCU 32BIT 128KB FLASH 64LQFP
MCIMX6U6AVM08ADR
MCIMX6U6AVM08ADR
NXP USA Inc.
I.MX6 ROM PERF ENHAN
PCA9554PW,118
PCA9554PW,118
NXP USA Inc.
IC I/O EXPANDER I2C 8B 16TSSOP
UJA1169ATK/X/FZ
UJA1169ATK/X/FZ
NXP USA Inc.
IC MINI-CAN SYSTEM BASIS CHIP
UJA1075ATW/3V3WD,1
UJA1075ATW/3V3WD,1
NXP USA Inc.
IC INTFACE SPECIALIZED 32HTSSOP
74LVC1G17GV-Q100125
74LVC1G17GV-Q100125
NXP USA Inc.
BUFFER, LVC/LCX/Z SERIES
N74F07D,602
N74F07D,602
NXP USA Inc.
IC BUFFER NON-INVERT 5.5V 14SO
74AHC1G66GW-Q100125
74AHC1G66GW-Q100125
NXP USA Inc.
SPST
MMDS09254HT1
MMDS09254HT1
NXP USA Inc.
ADVANCED DOHERTY ALIGNMENT MODUL