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NX3008PBKT,115
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NXP USA Inc. NX3008PBKT,115

Manufacturer No:
NX3008PBKT,115
Manufacturer:
NXP USA Inc.
Package:
Tape & Reel (TR)
Description:
MOSFET P-CH 30V 200MA SC75
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The NX3008PBKS is a 30 V, 200 mA dual P-channel Trench MOSFET produced by Nexperia. This component is automotive qualified and comes in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package. It is designed for use in various applications, including automotive, industrial, power, computing, consumer, mobile, and wearables.

Key Specifications

Parameter Value Unit
Type number NX3008PBKS
Package SOT363 (SC-88)
Channel type P-channel
Number of transistors 2
VDS [max] 30 V
RDSon [max] @ VGS = 4.5 V; @25°C 4100 mΩ
RDSon [max] @ VGS = 2.5 V 6500 mΩ
Tj [max] 150 °C
ID [max] 200 mA
QGD [typ] 0.09 nC
QG(tot) [typ] @ VGS = 4.5 V 0.55 nC
Ptot [max] 0.445 W
VGSth [typ] -0.9 V
Automotive qualified Yes
Ciss [typ] 31 pF
Coss [typ] 6.5 pF

Key Features

  • Dual P-channel enhancement mode Field-Effect Transistor (FET)
  • Automotive qualified (AEC-Q101 compliant)
  • Very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package
  • Logic level gate
  • Low on-state resistance (RDSon)
  • High operating temperature range (-55°C to 150°C)

Applications

  • Automotive systems
  • Industrial control systems
  • Power management systems
  • Computing and consumer electronics
  • Mobile and wearable devices

Q & A

  1. What is the maximum drain-source voltage (VDS) of the NX3008PBKS?

    The maximum drain-source voltage (VDS) is 30 V.

  2. What is the package type of the NX3008PBKS?

    The package type is SOT363 (SC-88).

  3. Is the NX3008PBKS automotive qualified?

    Yes, it is automotive qualified and complies with AEC-Q101 standards.

  4. What is the maximum continuous drain current (ID) of the NX3008PBKS?

    The maximum continuous drain current (ID) is 200 mA.

  5. What is the typical gate threshold voltage (VGSth) of the NX3008PBKS?

    The typical gate threshold voltage (VGSth) is -0.9 V.

  6. What is the maximum operating junction temperature (Tj) of the NX3008PBKS?

    The maximum operating junction temperature (Tj) is 150°C.

  7. What is the input capacitance (Ciss) of the NX3008PBKS?

    The input capacitance (Ciss) is typically 31 pF.

  8. What is the total gate charge (QG(tot)) at VGS = 4.5 V?

    The total gate charge (QG(tot)) at VGS = 4.5 V is typically 0.55 nC.

  9. What are the typical applications of the NX3008PBKS?

    The typical applications include automotive systems, industrial control systems, power management systems, computing and consumer electronics, and mobile and wearable devices.

  10. Where can I find more technical information and support for the NX3008PBKS?

    You can find more technical information and support on the Nexperia website, including datasheets, application notes, and design support tools.

Product Attributes

FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:200mA (Ta)
Drive Voltage (Max Rds On, Min Rds On):2.5V, 4.5V
Rds On (Max) @ Id, Vgs:4.1Ohm @ 200mA, 4.5V
Vgs(th) (Max) @ Id:1.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:0.72 nC @ 4.5 V
Vgs (Max):±8V
Input Capacitance (Ciss) (Max) @ Vds:46 pF @ 15 V
FET Feature:- 
Power Dissipation (Max):250mW (Ta), 770mW (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:SC-75
Package / Case:SC-75, SOT-416
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Similar Products

Part Number NX3008PBKT,115 NX3008PBKW,115 NX3008NBKT,115
Manufacturer NXP USA Inc. Nexperia USA Inc. NXP USA Inc.
Product Status Obsolete Active Obsolete
FET Type P-Channel P-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V 30 V 30 V
Current - Continuous Drain (Id) @ 25°C 200mA (Ta) 200mA (Ta) 350mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V 2.5V, 4.5V 1.8V, 4.5V
Rds On (Max) @ Id, Vgs 4.1Ohm @ 200mA, 4.5V 4.1Ohm @ 200mA, 4.5V 1.4Ohm @ 350mA, 4.5V
Vgs(th) (Max) @ Id 1.1V @ 250µA 1.1V @ 250µA 1.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 0.72 nC @ 4.5 V 0.72 nC @ 4.5 V 0.68 nC @ 4.5 V
Vgs (Max) ±8V ±8V ±8V
Input Capacitance (Ciss) (Max) @ Vds 46 pF @ 15 V 46 pF @ 15 V 50 pF @ 15 V
FET Feature - - -
Power Dissipation (Max) 250mW (Ta), 770mW (Tc) 260mW (Ta), 830mW (Tc) 250mW (Ta), 770mW (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Supplier Device Package SC-75 SOT-323 SC-75
Package / Case SC-75, SOT-416 SC-70, SOT-323 SC-75, SOT-416

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