STB9NK80Z
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STMicroelectronics STB9NK80Z

Manufacturer No:
STB9NK80Z
Manufacturer:
STMicroelectronics
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 800V 5.2A D2PAK
Delivery:
Payment:
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Product Introduction

Overview

The STB9NK80Z is a high-voltage N-channel Power MOSFET developed by STMicroelectronics using the advanced SuperMESH technology. This device is designed to offer high performance and reliability, particularly in applications requiring high voltage and current handling capabilities. The STB9NK80Z features Zener protection, which enhances its robustness against voltage spikes and other transient conditions. It is packaged in a surface mount D2PAK, making it suitable for a variety of power management and control applications.

Key Specifications

ParameterValue
Voltage Rating (Vds)800 V
Continuous Drain Current (Id)5.2 A (at Tc)
Power Dissipation (Pd)125 W (at Tc)
On-Resistance (Rds(on))1.5 Ohm (typical)
Package TypeD2PAK (Surface Mount)
dv/dt CapabilityExtremely high

Key Features

  • Zener protection for enhanced robustness against voltage spikes and transient conditions.
  • High voltage rating of 800 V, making it suitable for high-voltage applications.
  • High continuous drain current of 5.2 A at Tc.
  • Low on-resistance of 1.5 Ohm (typical), reducing power losses.
  • Extremely high dv/dt capability, ensuring reliable operation in fast-switching applications.
  • Automotive-grade reliability and performance.

Applications

The STB9NK80Z is designed for use in various high-voltage and high-current applications, including:

  • Power supplies and DC-DC converters.
  • Motor control and drive systems.
  • Automotive systems, such as battery management and power steering.
  • Industrial power management and control systems.
  • High-voltage switching and power amplification.

Q & A

  1. What is the voltage rating of the STB9NK80Z?
    The voltage rating of the STB9NK80Z is 800 V.
  2. What is the continuous drain current of the STB9NK80Z?
    The continuous drain current of the STB9NK80Z is 5.2 A at Tc.
  3. What is the on-resistance of the STB9NK80Z?
    The on-resistance of the STB9NK80Z is 1.5 Ohm (typical).
  4. What package type is the STB9NK80Z available in?
    The STB9NK80Z is available in a D2PAK surface mount package.
  5. Does the STB9NK80Z have any special protection features?
    Yes, the STB9NK80Z features Zener protection for enhanced robustness against voltage spikes and transient conditions.
  6. What are some typical applications for the STB9NK80Z?
    The STB9NK80Z is typically used in power supplies, motor control systems, automotive systems, industrial power management, and high-voltage switching applications.
  7. What technology is used in the STB9NK80Z?
    The STB9NK80Z is developed using STMicroelectronics' advanced SuperMESH technology.
  8. Is the STB9NK80Z suitable for automotive applications?
    Yes, the STB9NK80Z is automotive-grade and suitable for various automotive applications.
  9. What is the power dissipation capability of the STB9NK80Z?
    The power dissipation capability of the STB9NK80Z is 125 W at Tc.
  10. Does the STB9NK80Z have high dv/dt capability?
    Yes, the STB9NK80Z has extremely high dv/dt capability.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):800 V
Current - Continuous Drain (Id) @ 25°C:5.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:1.8Ohm @ 2.6A, 10V
Vgs(th) (Max) @ Id:4.5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs:40 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:1138 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):125W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:D2PAK
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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Similar Products

Part Number STB9NK80Z STB9NK90Z
Manufacturer STMicroelectronics STMicroelectronics
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 800 V 900 V
Current - Continuous Drain (Id) @ 25°C 5.2A (Tc) 8A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 1.8Ohm @ 2.6A, 10V 1.3Ohm @ 3.6A, 10V
Vgs(th) (Max) @ Id 4.5V @ 100µA 4.5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs 40 nC @ 10 V 72 nC @ 10 V
Vgs (Max) ±30V ±30V
Input Capacitance (Ciss) (Max) @ Vds 1138 pF @ 25 V 2115 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 125W (Tc) 160W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package D2PAK D2PAK
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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