Overview
The MUN5335DW1T2G is a dual bias resistor transistor produced by onsemi. This component is designed to replace a single device and its external resistor bias network, offering a compact and efficient solution for various electronic applications. It features both NPN and PNP transistors in a single package, making it versatile for use in a range of circuits.
Key Specifications
Characteristic | Symbol | Max Unit |
---|---|---|
Collector-Base Voltage | VCBO | 50 Vdc |
Collector-Emitter Voltage | VCEO | 50 Vdc |
Collector Current − Continuous | IC | 100 mAdc |
Input Forward Voltage | VIN(fwd) | 12 Vdc |
Input Reverse Voltage | VIN(rev) | 5 Vdc |
Total Device Dissipation (TA = 25°C, one junction heated) | PD | 187 mW |
Thermal Resistance, Junction to Ambient (one junction heated) | RθJA | 670 °C/W |
Junction and Storage Temperature Range | TJ, Tstg | −55 to +150 °C |
Key Features
- Dual Transistor Configuration: Includes both NPN and PNP transistors in a single package.
- Built-in Bias Resistors: Eliminates the need for external resistor bias networks.
- Compact Packaging: Available in SOT-363 package, making it suitable for space-constrained designs.
- RoHS Compliant: Pb-Free, Halogen Free/BFR Free, ensuring environmental compliance.
- Wide Temperature Range: Operates over a temperature range of −55 to +150 °C.
Applications
- General Purpose Switching: Suitable for various switching applications due to its dual transistor configuration.
- Audio and Video Equipment: Can be used in audio and video circuits where compact and efficient transistor solutions are required.
- Automotive Electronics: Applicable in automotive systems due to its wide temperature range and robust specifications.
- Industrial Control Systems: Used in industrial control circuits where reliability and compactness are crucial.
Q & A
- What is the MUN5335DW1T2G used for?
The MUN5335DW1T2G is used as a dual bias resistor transistor, replacing single devices and their external resistor bias networks in various electronic circuits.
- What are the maximum collector-emitter and collector-base voltages for the MUN5335DW1T2G?
The maximum collector-emitter voltage (VCEO) and collector-base voltage (VCBO) are both 50 Vdc.
- What is the continuous collector current rating of the MUN5335DW1T2G?
The continuous collector current (IC) is rated at 100 mAdc.
- What is the thermal resistance from junction to ambient for the MUN5335DW1T2G?
The thermal resistance from junction to ambient (RθJA) is 670 °C/W for one junction heated.
- Is the MUN5335DW1T2G RoHS compliant?
- What are the typical applications of the MUN5335DW1T2G?
The MUN5335DW1T2G is typically used in general purpose switching, audio and video equipment, automotive electronics, and industrial control systems.
- What is the junction and storage temperature range for the MUN5335DW1T2G?
The junction and storage temperature range is −55 to +150 °C.
- What package type is the MUN5335DW1T2G available in?
The MUN5335DW1T2G is available in the SOT-363 package.
- How many devices are shipped per reel for the MUN5335DW1T2G?
The MUN5335DW1T2G is shipped in quantities of 3,000 per reel.
- What are the built-in bias resistors used for in the MUN5335DW1T2G?
The built-in bias resistors eliminate the need for external resistor bias networks, simplifying circuit design and reducing component count.