MUN5335DW1T2G
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onsemi MUN5335DW1T2G

Manufacturer No:
MUN5335DW1T2G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
TRANS NPN/PNP PREBIAS 0.25W SC88
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The MUN5335DW1T2G is a dual bias resistor transistor produced by onsemi. This component is designed to replace a single device and its external resistor bias network, offering a compact and efficient solution for various electronic applications. It features both NPN and PNP transistors in a single package, making it versatile for use in a range of circuits.

Key Specifications

Characteristic Symbol Max Unit
Collector-Base Voltage VCBO 50 Vdc
Collector-Emitter Voltage VCEO 50 Vdc
Collector Current − Continuous IC 100 mAdc
Input Forward Voltage VIN(fwd) 12 Vdc
Input Reverse Voltage VIN(rev) 5 Vdc
Total Device Dissipation (TA = 25°C, one junction heated) PD 187 mW
Thermal Resistance, Junction to Ambient (one junction heated) RθJA 670 °C/W
Junction and Storage Temperature Range TJ, Tstg −55 to +150 °C

Key Features

  • Dual Transistor Configuration: Includes both NPN and PNP transistors in a single package.
  • Built-in Bias Resistors: Eliminates the need for external resistor bias networks.
  • Compact Packaging: Available in SOT-363 package, making it suitable for space-constrained designs.
  • RoHS Compliant: Pb-Free, Halogen Free/BFR Free, ensuring environmental compliance.
  • Wide Temperature Range: Operates over a temperature range of −55 to +150 °C.

Applications

  • General Purpose Switching: Suitable for various switching applications due to its dual transistor configuration.
  • Audio and Video Equipment: Can be used in audio and video circuits where compact and efficient transistor solutions are required.
  • Automotive Electronics: Applicable in automotive systems due to its wide temperature range and robust specifications.
  • Industrial Control Systems: Used in industrial control circuits where reliability and compactness are crucial.

Q & A

  1. What is the MUN5335DW1T2G used for?

    The MUN5335DW1T2G is used as a dual bias resistor transistor, replacing single devices and their external resistor bias networks in various electronic circuits.

  2. What are the maximum collector-emitter and collector-base voltages for the MUN5335DW1T2G?

    The maximum collector-emitter voltage (VCEO) and collector-base voltage (VCBO) are both 50 Vdc.

  3. What is the continuous collector current rating of the MUN5335DW1T2G?

    The continuous collector current (IC) is rated at 100 mAdc.

  4. What is the thermal resistance from junction to ambient for the MUN5335DW1T2G?

    The thermal resistance from junction to ambient (RθJA) is 670 °C/W for one junction heated.

  5. Is the MUN5335DW1T2G RoHS compliant?
  6. What are the typical applications of the MUN5335DW1T2G?

    The MUN5335DW1T2G is typically used in general purpose switching, audio and video equipment, automotive electronics, and industrial control systems.

  7. What is the junction and storage temperature range for the MUN5335DW1T2G?

    The junction and storage temperature range is −55 to +150 °C.

  8. What package type is the MUN5335DW1T2G available in?

    The MUN5335DW1T2G is available in the SOT-363 package.

  9. How many devices are shipped per reel for the MUN5335DW1T2G?

    The MUN5335DW1T2G is shipped in quantities of 3,000 per reel.

  10. What are the built-in bias resistors used for in the MUN5335DW1T2G?

    The built-in bias resistors eliminate the need for external resistor bias networks, simplifying circuit design and reducing component count.

Product Attributes

Transistor Type:1 NPN, 1 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max):100mA
Voltage - Collector Emitter Breakdown (Max):50V
Resistor - Base (R1):2.2kOhms
Resistor - Emitter Base (R2):47kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce:80 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic:250mV @ 300µA, 10mA
Current - Collector Cutoff (Max):500nA
Frequency - Transition:- 
Power - Max:250mW
Mounting Type:Surface Mount
Package / Case:6-TSSOP, SC-88, SOT-363
Supplier Device Package:SC-88/SC70-6/SOT-363
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Similar Products

Part Number MUN5335DW1T2G MUN5335DW1T1G MUN5335DW1T2
Manufacturer onsemi onsemi onsemi
Product Status Active Active Obsolete
Transistor Type 1 NPN, 1 PNP - Pre-Biased (Dual) 1 NPN, 1 PNP - Pre-Biased (Dual) 1 NPN, 1 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max) 100mA 100mA 100mA
Voltage - Collector Emitter Breakdown (Max) 50V 50V 50V
Resistor - Base (R1) 2.2kOhms 2.2kOhms 2.2kOhms
Resistor - Emitter Base (R2) 47kOhms 47kOhms 47kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce 80 @ 5mA, 10V 80 @ 5mA, 10V 80 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic 250mV @ 300µA, 10mA 250mV @ 300µA, 10mA -
Current - Collector Cutoff (Max) 500nA 500nA -
Frequency - Transition - - -
Power - Max 250mW 250mW -
Mounting Type Surface Mount Surface Mount Surface Mount
Package / Case 6-TSSOP, SC-88, SOT-363 6-TSSOP, SC-88, SOT-363 6-TSSOP, SC-88, SOT-363
Supplier Device Package SC-88/SC70-6/SOT-363 SC-88/SC70-6/SOT-363 SC-88/SC70-6/SOT-363

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