Overview
The NSVMUN531335DW1T1G is a Complementary Bias Resistor Transistor (BRT) produced by onsemi. This device is designed to integrate a single transistor with a monolithic bias network, consisting of two resistors, thereby simplifying circuit design and reducing the need for external components. The BRT includes both NPN and PNP transistors, making it versatile for various applications. It is AEC-Q101 qualified and PPAP capable, ensuring its suitability for automotive and other demanding environments. The device is also Pb-free, halogen-free, and RoHS compliant, aligning with modern environmental standards.
Key Specifications
| Characteristic | Symbol | Min | Typ | Max | Unit |
|---|---|---|---|---|---|
| Collector-Base Voltage (VCBO) | VCBO | - | - | 50 | Vdc |
| Collector-Emitter Voltage (VCEO) | VCEO | - | - | 50 | Vdc |
| Collector Current - Continuous (IC) | IC | - | - | 100 mA | mA |
| Input Forward Voltage (VIN(fwd)) - PNP | VIN(fwd) | - | - | 12 | Vdc |
| Input Forward Voltage (VIN(fwd)) - NPN | VIN(fwd) | - | - | 40 | Vdc |
| DC Current Gain (hFE) - PNP | hFE | 80 | 140 | - | - |
| DC Current Gain (hFE) - NPN | hFE | 80 | 140 | - | - |
| Collector-Emitter Saturation Voltage (VCE(sat)) | VCE(sat) | - | - | 0.25 | Vdc |
| Input Resistor R1 - PNP | R1 | 1.5 | 2.2 | 2.9 | kΩ |
| Input Resistor R1 - NPN | R1 | 32.9 | 47 | 61.1 | kΩ |
| Thermal Resistance, Junction to Ambient (RθJA) | RθJA | - | - | 670 | °C/W |
Key Features
- Simplifies circuit design by integrating the transistor and bias resistors into a single device.
- Reduces board space and component count.
- AEC-Q101 qualified and PPAP capable, making it suitable for automotive and other demanding applications.
- Pb-free, halogen-free, and RoHS compliant.
- Includes both NPN and PNP transistors, enhancing versatility.
Applications
- Automotive systems: Due to its AEC-Q101 qualification, it is suitable for various automotive applications.
- Consumer electronics: Ideal for use in consumer electronics where space and component count are critical.
- Industrial control systems: Can be used in industrial control systems where reliability and compact design are essential.
- General-purpose switching: Suitable for general-purpose switching applications where a compact, integrated solution is needed.
Q & A
- What is the NSVMUN531335DW1T1G?
The NSVMUN531335DW1T1G is a Complementary Bias Resistor Transistor (BRT) that integrates a single transistor with a monolithic bias network.
- What are the key benefits of using the NSVMUN531335DW1T1G?
It simplifies circuit design, reduces board space, and decreases component count. It is also AEC-Q101 qualified and RoHS compliant.
- What are the maximum collector-emitter voltages for the NPN and PNP transistors?
Both NPN and PNP transistors have a maximum collector-emitter voltage (VCEO) of 50 Vdc.
- What is the maximum continuous collector current for this device?
The maximum continuous collector current (IC) is 100 mA.
- Is the NSVMUN531335DW1T1G suitable for automotive applications?
Yes, it is AEC-Q101 qualified and PPAP capable, making it suitable for automotive and other demanding applications.
- What is the thermal resistance from junction to ambient for this device?
The thermal resistance from junction to ambient (RθJA) is 670 °C/W.
- What are the input resistor values for the PNP and NPN transistors?
For the PNP transistor, R1 is between 1.5 kΩ and 2.9 kΩ. For the NPN transistor, R1 is between 32.9 kΩ and 61.1 kΩ.
- Is the NSVMUN531335DW1T1G RoHS compliant?
Yes, the device is Pb-free, halogen-free, and RoHS compliant.
- What is the package type for the NSVMUN531335DW1T1G?
The device is packaged in a SOT-363 (Pb-free) package.
- How many devices are shipped per reel?
The NSVMUN531335DW1T1G is shipped in reels of 3000 devices.
