BCV26E327
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Infineon Technologies BCV26E327

Manufacturer No:
BCV26E327
Manufacturer:
Infineon Technologies
Package:
Bulk
Description:
TRANS PNP DARL 30V 0.5A SOT23
Delivery:
Payment:
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Product Introduction

Overview

The BCV26E327 is a PNP Darlington transistor produced by Infineon Technologies. This transistor is designed for applications that require high current gain and is part of the BCV26 series, known for its robust performance in various electronic systems. The BCV26E327 is housed in a SOT-23-3 package, making it suitable for surface mount applications.

Key Specifications

Parameter Value Units
Collector-Emitter Voltage (VCEO) 30 V
Collector-Base Voltage (VCBO) 40 V
Emitter-Base Voltage (VEBO) 10 V
Collector Current - Continuous (IC) 1.2 A
Operating and Storage Junction Temperature Range (TJ, Tstg) -55 to +150 °C
DC Current Gain (hFE) @ Ic, Vce 20000 @ 100mA, 5V
Total Device Dissipation (PD) 350 mW mW
Thermal Resistance, Junction to Ambient (RθJA) 357 °C/W °C/W
Package / Case SOT-23-3

Key Features

  • High Current Gain: The BCV26E327 offers a high DC current gain of up to 20,000 at 100mA and 5V, making it suitable for applications requiring high amplification.
  • Low Saturation Voltage: The transistor has a low Vce saturation voltage, typically around 1V at 100µA and 100mA, which helps in reducing power losses.
  • Wide Operating Temperature Range: It operates over a wide junction temperature range of -55°C to 150°C, ensuring reliability in various environmental conditions.
  • Compact Package: The SOT-23-3 package is compact and suitable for surface mount applications, making it ideal for space-constrained designs.

Applications

  • Automotive Systems: Used in automotive electronics for various control and sensing applications due to its high reliability and robust performance.
  • Industrial Automation: Suitable for industrial automation systems where high current gain and reliability are crucial.
  • Consumer Electronics: Found in consumer electronics such as home appliances and audio equipment where high amplification is required.
  • Power Management: Used in power management circuits to control and regulate power flow efficiently.

Q & A

  1. What is the maximum collector current of the BCV26E327?

    The maximum collector current (IC) is 1.2 A.

  2. What is the operating temperature range of the BCV26E327?

    The operating temperature range is -55°C to 150°C.

  3. What is the DC current gain (hFE) of the BCV26E327 at 100mA and 5V?

    The DC current gain (hFE) is 20,000 at 100mA and 5V.

  4. What is the package type of the BCV26E327?

    The package type is SOT-23-3.

  5. What is the maximum collector-emitter voltage (VCEO) of the BCV26E327?

    The maximum collector-emitter voltage (VCEO) is 30 V.

  6. What is the thermal resistance, junction to ambient (RθJA), of the BCV26E327?

    The thermal resistance, junction to ambient (RθJA), is 357 °C/W.

  7. What are some common applications of the BCV26E327?

    Common applications include automotive systems, industrial automation, consumer electronics, and power management circuits.

  8. What is the total device dissipation (PD) of the BCV26E327?

    The total device dissipation (PD) is 350 mW.

  9. Is the BCV26E327 suitable for high-temperature environments?

    Yes, it is suitable for high-temperature environments with an operating temperature range of -55°C to 150°C.

  10. What is the collector-cutoff current (ICBO) of the BCV26E327?

    The collector-cutoff current (ICBO) is 0.1 µA at VCB = 30 V, IE = 0.

Product Attributes

Transistor Type:PNP - Darlington
Current - Collector (Ic) (Max):500 mA
Voltage - Collector Emitter Breakdown (Max):30 V
Vce Saturation (Max) @ Ib, Ic:1V @ 100µA, 100mA
Current - Collector Cutoff (Max):100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:20000 @ 100mA, 5V
Power - Max:360 mW
Frequency - Transition:200MHz
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Package / Case:TO-236-3, SC-59, SOT-23-3
Supplier Device Package:PG-SOT23
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Similar Products

Part Number BCV26E327 BCV26E6327
Manufacturer Infineon Technologies Infineon Technologies
Product Status Active Active
Transistor Type PNP - Darlington PNP - Darlington
Current - Collector (Ic) (Max) 500 mA 500 mA
Voltage - Collector Emitter Breakdown (Max) 30 V 30 V
Vce Saturation (Max) @ Ib, Ic 1V @ 100µA, 100mA 1V @ 100µA, 100mA
Current - Collector Cutoff (Max) 100nA (ICBO) 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 20000 @ 100mA, 5V 20000 @ 100mA, 5V
Power - Max 360 mW 360 mW
Frequency - Transition 200MHz 200MHz
Operating Temperature 150°C (TJ) 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3
Supplier Device Package PG-SOT23 PG-SOT23

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