BCV26E6327
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Infineon Technologies BCV26E6327

Manufacturer No:
BCV26E6327
Manufacturer:
Infineon Technologies
Package:
Bulk
Description:
TRANS PNP DARL 30V 0.5A SOT23
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BCV26E6327 is a PNP Darlington transistor manufactured by Infineon Technologies. This transistor is designed for applications that require high current gain and is packaged in a compact SOT23 case, making it suitable for a variety of electronic circuits. The device is known for its high collector current and low saturation voltage, which are critical for efficient operation in many electronic systems.

Key Specifications

Parameter Value Unit
Manufacturer Infineon Technologies
Type of Transistor PNP Darlington
Collector-Emitter Voltage (VCEO) 30 V
Collector-Base Voltage (VCBO) 40 V
Emitter-Base Voltage (VEBO) 10 V
Collector Current (IC) 0.5 A A
Power Dissipation 0.36 W W
Case SOT23
Mounting SMD
Frequency 200 MHz MHz
Operating and Storage Junction Temperature Range -55 to +150 °C

Key Features

  • High Current Gain: The BCV26E6327 offers extremely high current gain, making it suitable for applications requiring significant amplification of low input signals.
  • Low Saturation Voltage: The transistor has a low collector-emitter saturation voltage, which helps in reducing power losses and improving efficiency in the circuit.
  • Compact Packaging: The SOT23 package is compact and suitable for surface mount technology (SMT), making it ideal for modern electronic designs where space is a constraint.
  • Wide Operating Temperature Range: The device can operate over a wide temperature range from -55°C to +150°C, making it versatile for various environmental conditions.
  • High Frequency Capability: With a frequency of up to 200 MHz, this transistor is suitable for high-frequency applications.

Applications

  • Power Amplifiers: Due to its high current gain and low saturation voltage, the BCV26E6327 is often used in power amplifier circuits.
  • Switching Circuits: The transistor's ability to handle high currents and its low power dissipation make it suitable for switching applications.
  • Automotive Electronics: The wide operating temperature range and high reliability of the BCV26E6327 make it a good choice for automotive electronic systems.
  • Industrial Control Systems: This transistor can be used in various industrial control systems where high current gain and reliability are required.
  • Consumer Electronics: It is also used in consumer electronics such as audio amplifiers and other high-current applications.

Q & A

  1. What is the collector-emitter voltage rating of the BCV26E6327?

    The collector-emitter voltage (VCEO) rating is 30V.

  2. What is the maximum collector current for the BCV26E6327?

    The maximum collector current (IC) is 0.5A.

  3. What is the power dissipation of the BCV26E6327?

    The power dissipation is 0.36W.

  4. What is the package type of the BCV26E6327?

    The transistor is packaged in a SOT23 case.

  5. What is the operating temperature range of the BCV26E6327?

    The operating and storage junction temperature range is -55°C to +150°C.

  6. What is the typical current gain of the BCV26E6327?

    The typical DC current gain (hFE) can range from 4000 to 20000 depending on the collector current.

  7. Is the BCV26E6327 suitable for high-frequency applications?

    Yes, it has a frequency capability of up to 200 MHz.

  8. What are some common applications of the BCV26E6327?

    Common applications include power amplifiers, switching circuits, automotive electronics, industrial control systems, and consumer electronics.

  9. How is the BCV26E6327 mounted?

    The transistor is surface-mounted (SMD).

  10. What is the collector-emitter saturation voltage of the BCV26E6327?

    The collector-emitter saturation voltage (VCE(sat)) is typically 1.0V.

Product Attributes

Transistor Type:PNP - Darlington
Current - Collector (Ic) (Max):500 mA
Voltage - Collector Emitter Breakdown (Max):30 V
Vce Saturation (Max) @ Ib, Ic:1V @ 100µA, 100mA
Current - Collector Cutoff (Max):100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:20000 @ 100mA, 5V
Power - Max:360 mW
Frequency - Transition:200MHz
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Package / Case:TO-236-3, SC-59, SOT-23-3
Supplier Device Package:PG-SOT23
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Similar Products

Part Number BCV26E6327 BCV27E6327 BCV26E327
Manufacturer Infineon Technologies Infineon Technologies Infineon Technologies
Product Status Active Active Active
Transistor Type PNP - Darlington - PNP - Darlington
Current - Collector (Ic) (Max) 500 mA - 500 mA
Voltage - Collector Emitter Breakdown (Max) 30 V - 30 V
Vce Saturation (Max) @ Ib, Ic 1V @ 100µA, 100mA - 1V @ 100µA, 100mA
Current - Collector Cutoff (Max) 100nA (ICBO) - 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 20000 @ 100mA, 5V - 20000 @ 100mA, 5V
Power - Max 360 mW - 360 mW
Frequency - Transition 200MHz - 200MHz
Operating Temperature 150°C (TJ) - 150°C (TJ)
Mounting Type Surface Mount - Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3 - TO-236-3, SC-59, SOT-23-3
Supplier Device Package PG-SOT23 - PG-SOT23

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