BCW32,215
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NXP Semiconductors BCW32,215

Manufacturer No:
BCW32,215
Manufacturer:
NXP Semiconductors
Package:
Bulk
Description:
NEXPERIA BCW32 - SMALL SIGNAL BI
Delivery:
Payment:
iso14001
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Product Introduction

Overview

The BCW32,215 is an NPN general-purpose bipolar junction transistor (BJT) manufactured by Nexperia, which was previously part of NXP Semiconductors. This transistor is designed for general-purpose switching and amplification and is particularly suited for automotive and industrial applications due to its AEC-Q101 qualification. It is packaged in a compact SOT23 package, making it ideal for space-constrained designs.

Key Specifications

Parameter Value Unit
Transistor Type NPN
Collector Current (Ic) - Max 100 mA
Collector-Emitter Breakdown Voltage (Vceo) - Max 32 V
Vce Saturation (Max) @ Ib, Ic 210mV @ 2.5mA, 50mA
Collector Cutoff Current (Icbo) - Max 100 nA
DC Current Gain (hFE) - Min @ Ic, Vce 200 @ 2mA, 5V
Power Dissipation (Ptot) - Max 250 mW
Transition Frequency (fT) 100 MHz
Operating Temperature (Tj) - Max 150 °C
Package Type SOT23
Mounting Type Surface Mount

Key Features

  • AEC-Q101 qualified, making it suitable for automotive applications.
  • Low current (100 mA) and low voltage (32 V) capabilities.
  • Compact SOT23 package for space-efficient designs.
  • General-purpose switching and amplification.
  • High transition frequency of 100 MHz.
  • Maximum power dissipation of 250 mW.
  • Surface mount technology for easy integration into modern PCB designs.

Applications

  • Automotive systems: Suitable for various automotive applications due to its AEC-Q101 qualification.
  • Industrial control systems: Used in general-purpose switching and amplification roles.
  • Consumer electronics: Applicable in a wide range of consumer electronic devices requiring low-power switching and amplification.
  • Power management: Can be used in power management circuits requiring low current and voltage handling.

Q & A

  1. What is the maximum collector current of the BCW32,215 transistor?

    The maximum collector current is 100 mA.

  2. What is the maximum collector-emitter breakdown voltage of the BCW32,215 transistor?

    The maximum collector-emitter breakdown voltage is 32 V.

  3. What is the package type of the BCW32,215 transistor?

    The package type is SOT23.

  4. Is the BCW32,215 transistor AEC-Q101 qualified?

    Yes, it is AEC-Q101 qualified, making it suitable for automotive applications.

  5. What is the transition frequency of the BCW32,215 transistor?

    The transition frequency is 100 MHz.

  6. What is the maximum power dissipation of the BCW32,215 transistor?

    The maximum power dissipation is 250 mW.

  7. What is the operating temperature range of the BCW32,215 transistor?

    The maximum operating temperature (Tj) is 150°C.

  8. Can the BCW32,215 transistor be used in consumer electronics?

    Yes, it can be used in a wide range of consumer electronic devices requiring low-power switching and amplification.

  9. How do I obtain samples of the BCW32,215 transistor?

    Samples can be ordered via Nexperia's sales organization or through their network of global and regional distributors.

  10. What kind of support does Nexperia offer for the BCW32,215 transistor?

    Nexperia provides comprehensive technical support, including evaluation boards and design resources.

Product Attributes

Transistor Type:NPN
Current - Collector (Ic) (Max):100 mA
Voltage - Collector Emitter Breakdown (Max):32 V
Vce Saturation (Max) @ Ib, Ic:210mV @ 2.5mA, 50mA
Current - Collector Cutoff (Max):100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:200 @ 2mA, 5V
Power - Max:250 mW
Frequency - Transition:100MHz
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Package / Case:TO-236-3, SC-59, SOT-23-3
Supplier Device Package:TO-236AB
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Same Series
BCW33,215
BCW33,215
NEXPERIA BCW33 - SMALL SIGNAL BI
BCW32,235
BCW32,235
TRANS NPN 32V 0.1A TO236AB
BCW31,215
BCW31,215
TRANS NPN 32V 0.1A TO236AB

Similar Products

Part Number BCW32,215 BCW33,215 BCW32,235 BCW30,215 BCW31,215
Manufacturer NXP Semiconductors NXP Semiconductors Nexperia USA Inc. Nexperia USA Inc. Nexperia USA Inc.
Product Status Active Active Active Active Active
Transistor Type NPN NPN NPN PNP NPN
Current - Collector (Ic) (Max) 100 mA 100 mA 100 mA 100 mA 100 mA
Voltage - Collector Emitter Breakdown (Max) 32 V 32 V 32 V 32 V 32 V
Vce Saturation (Max) @ Ib, Ic 210mV @ 2.5mA, 50mA 210mV @ 2.5mA, 50mA 210mV @ 2.5mA, 50mA 150mV @ 2.5mA, 50mA 210mV @ 2.5mA, 50mA
Current - Collector Cutoff (Max) 100nA (ICBO) 100nA (ICBO) 100nA (ICBO) 100nA (ICBO) 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 200 @ 2mA, 5V 420 @ 2mA, 5V 200 @ 2mA, 5V 215 @ 2mA, 5V 110 @ 2mA, 5V
Power - Max 250 mW 250 mW 250 mW 250 mW 250 mW
Frequency - Transition 100MHz 100MHz 100MHz 100MHz 100MHz
Operating Temperature 150°C (TJ) 150°C (TJ) 150°C (TJ) 150°C (TJ) 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3
Supplier Device Package TO-236AB TO-236AB TO-236AB TO-236AB TO-236AB

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