MMBF5484LT1
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onsemi MMBF5484LT1

Manufacturer No:
MMBF5484LT1
Manufacturer:
onsemi
Package:
Cut Tape (CT)
Description:
MOSFET SS N-CHAN 25V SOT23
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The MMBF5484LT1 is an N-Channel JFET (Junction Field-Effect Transistor) produced by onsemi. This device is part of onsemi's preferred line, recommended for future use and offering the best overall value. The MMBF5484LT1 is designed for various electronic applications, including low On Resistance analog switching and other electronic switching roles. It is available in a Pb-Free SOT-23 (TO-236) package, making it suitable for a wide range of modern electronic designs.

Key Specifications

Characteristic Symbol Value Unit
Drain-Gate Voltage VDG 25 Vdc
Reverse Gate-Source Voltage VGS(r) 25 Vdc
Forward Gate Current IGF 10 mAdc
Continuous Device Dissipation at or Below TC = 25°C PD 200 mW
Linear Derating Factor PD 2.8 mW/°C
Storage Channel Temperature Range Tstg −65 to +150 °C
Gate-Source Breakdown Voltage V(BR)GSS −25 Vdc
Gate Reverse Current IGSS −1.0 nAdc
Gate Source Cutoff Voltage VGS(off) −0.3 to −3.0 Vdc
Zero-Gate-Voltage Drain Current IDSS 1.0 to 5.0 mAdc

Key Features

  • Pb-Free Package: Available in a Pb-Free SOT-23 (TO-236) package, making it compliant with current environmental regulations.
  • Low On Resistance: Suitable for low On Resistance analog switching applications, enhancing the efficiency of electronic circuits.
  • Wide Temperature Range: Operates over a wide temperature range from −55°C to +150°C, making it versatile for various environmental conditions.
  • High Gate-Source Breakdown Voltage: Offers a gate-source breakdown voltage of up to −25 Vdc, providing robust performance in high-voltage applications.
  • Small Signal Characteristics: Features forward transfer admittance and output admittance, making it suitable for small signal amplification and other RF applications.

Applications

  • Electronic Switching: Primarily designed for electronic switching applications, including low On Resistance analog switching.
  • RF Amplifiers: Suitable for use in RF amplifier circuits due to its small signal characteristics.
  • General Purpose Amplification: Can be used in various general-purpose amplification roles where a JFET is required.
  • Automotive and Industrial Electronics: Its wide temperature range and robust specifications make it suitable for use in automotive and industrial electronic systems.

Q & A

  1. What is the maximum drain-gate voltage for the MMBF5484LT1?

    The maximum drain-gate voltage is 25 Vdc.

  2. What is the operating temperature range for the MMBF5484LT1?

    The operating temperature range is from −55°C to +150°C.

  3. Is the MMBF5484LT1 available in a Pb-Free package?

    Yes, the MMBF5484LT1 is available in a Pb-Free SOT-23 (TO-236) package.

  4. What is the typical application of the MMBF5484LT1?

    The MMBF5484LT1 is primarily designed for electronic switching applications, including low On Resistance analog switching.

  5. What is the gate-source breakdown voltage of the MMBF5484LT1?

    The gate-source breakdown voltage is up to −25 Vdc.

  6. What are the key small signal characteristics of the MMBF5484LT1?

    The device features forward transfer admittance, output admittance, and other small signal parameters suitable for RF and amplification applications.

  7. Can the MMBF5484LT1 be used in high-temperature environments?

    Yes, it can operate over a wide temperature range from −55°C to +150°C.

  8. Is the MMBF5484LT1 still in production?

    No, the MMBF5484LT1G is listed as obsolete and no longer manufactured. However, substitutes like the MMBF5457 are available.

  9. What is the maximum forward gate current for the MMBF5484LT1?

    The maximum forward gate current is 10 mA.

  10. What are some common applications of the MMBF5484LT1 in industrial electronics?

    It can be used in various industrial electronic systems due to its robust specifications and wide temperature range.

Product Attributes

FET Type:- 
Voltage - Breakdown (V(BR)GSS):- 
Drain to Source Voltage (Vdss):- 
Current - Drain (Idss) @ Vds (Vgs=0):- 
Current Drain (Id) - Max:- 
Voltage - Cutoff (VGS off) @ Id:- 
Input Capacitance (Ciss) (Max) @ Vds:- 
Resistance - RDS(On):- 
Power - Max:- 
Operating Temperature:- 
Mounting Type:- 
Package / Case:- 
Supplier Device Package:- 
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Similar Products

Part Number MMBF5484LT1 MMBF5484LT1G
Manufacturer onsemi onsemi
Product Status Obsolete Obsolete
FET Type - N-Channel
Voltage - Breakdown (V(BR)GSS) - 25 V
Drain to Source Voltage (Vdss) - -
Current - Drain (Idss) @ Vds (Vgs=0) - 1 mA @ 15 V
Current Drain (Id) - Max - -
Voltage - Cutoff (VGS off) @ Id - 300 mV @ 10 nA
Input Capacitance (Ciss) (Max) @ Vds - 5pF @ 15V
Resistance - RDS(On) - -
Power - Max - 225 mW
Operating Temperature - -55°C ~ 150°C (TJ)
Mounting Type - Surface Mount
Package / Case - TO-236-3, SC-59, SOT-23-3
Supplier Device Package - SOT-23-3 (TO-236)

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