Overview
The MMBF5484LT1 is an N-Channel JFET (Junction Field-Effect Transistor) produced by onsemi. This device is part of onsemi's preferred line, recommended for future use and offering the best overall value. The MMBF5484LT1 is designed for various electronic applications, including low On Resistance analog switching and other electronic switching roles. It is available in a Pb-Free SOT-23 (TO-236) package, making it suitable for a wide range of modern electronic designs.
Key Specifications
| Characteristic | Symbol | Value | Unit |
|---|---|---|---|
| Drain-Gate Voltage | VDG | 25 | Vdc |
| Reverse Gate-Source Voltage | VGS(r) | 25 | Vdc |
| Forward Gate Current | IGF | 10 | mAdc |
| Continuous Device Dissipation at or Below TC = 25°C | PD | 200 | mW |
| Linear Derating Factor | PD | 2.8 | mW/°C |
| Storage Channel Temperature Range | Tstg | −65 to +150 | °C |
| Gate-Source Breakdown Voltage | V(BR)GSS | −25 | Vdc |
| Gate Reverse Current | IGSS | −1.0 nAdc | |
| Gate Source Cutoff Voltage | VGS(off) | −0.3 to −3.0 | Vdc |
| Zero-Gate-Voltage Drain Current | IDSS | 1.0 to 5.0 | mAdc |
Key Features
- Pb-Free Package: Available in a Pb-Free SOT-23 (TO-236) package, making it compliant with current environmental regulations.
- Low On Resistance: Suitable for low On Resistance analog switching applications, enhancing the efficiency of electronic circuits.
- Wide Temperature Range: Operates over a wide temperature range from −55°C to +150°C, making it versatile for various environmental conditions.
- High Gate-Source Breakdown Voltage: Offers a gate-source breakdown voltage of up to −25 Vdc, providing robust performance in high-voltage applications.
- Small Signal Characteristics: Features forward transfer admittance and output admittance, making it suitable for small signal amplification and other RF applications.
Applications
- Electronic Switching: Primarily designed for electronic switching applications, including low On Resistance analog switching.
- RF Amplifiers: Suitable for use in RF amplifier circuits due to its small signal characteristics.
- General Purpose Amplification: Can be used in various general-purpose amplification roles where a JFET is required.
- Automotive and Industrial Electronics: Its wide temperature range and robust specifications make it suitable for use in automotive and industrial electronic systems.
Q & A
- What is the maximum drain-gate voltage for the MMBF5484LT1?
The maximum drain-gate voltage is 25 Vdc.
- What is the operating temperature range for the MMBF5484LT1?
The operating temperature range is from −55°C to +150°C.
- Is the MMBF5484LT1 available in a Pb-Free package?
Yes, the MMBF5484LT1 is available in a Pb-Free SOT-23 (TO-236) package.
- What is the typical application of the MMBF5484LT1?
The MMBF5484LT1 is primarily designed for electronic switching applications, including low On Resistance analog switching.
- What is the gate-source breakdown voltage of the MMBF5484LT1?
The gate-source breakdown voltage is up to −25 Vdc.
- What are the key small signal characteristics of the MMBF5484LT1?
The device features forward transfer admittance, output admittance, and other small signal parameters suitable for RF and amplification applications.
- Can the MMBF5484LT1 be used in high-temperature environments?
Yes, it can operate over a wide temperature range from −55°C to +150°C.
- Is the MMBF5484LT1 still in production?
No, the MMBF5484LT1G is listed as obsolete and no longer manufactured. However, substitutes like the MMBF5457 are available.
- What is the maximum forward gate current for the MMBF5484LT1?
The maximum forward gate current is 10 mA.
- What are some common applications of the MMBF5484LT1 in industrial electronics?
It can be used in various industrial electronic systems due to its robust specifications and wide temperature range.
